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    • 4. 发明授权
    • Enhanced caller ID with recipient-selected caller information display
    • 具有收件人选择的来电者信息的增强的呼叫者ID显示
    • US09444946B2
    • 2016-09-13
    • US13306667
    • 2011-11-29
    • Scott WhiteJames Cansler, Jr.
    • Scott WhiteJames Cansler, Jr.
    • H04M1/56H04M15/06H04N21/441H04N21/442
    • H04M15/06H04N21/441H04N21/44222
    • A method includes receiving an incoming call at a first device. The method includes determining whether second caller identification information is available at the first device based on first caller identification information received with the incoming call. The method further includes retrieving the second caller identification information in response to determining that the second caller identification information is available at the first device. The method further includes presenting a graphical display at a display device. The graphical display includes a plurality of caller information fields. The plurality of caller information fields are populated based on the first caller identification information and based on the second caller identification information. The graphical display also includes a user selectable edit option to edit the second caller identification information during the incoming call. The method further includes modifying the second caller identification information in response to selection of the user selectable edit option.
    • 一种方法包括在第一设备处接收来话呼叫。 该方法包括基于利用来话呼叫接收到的第一呼叫者识别信息确定第一呼叫者识别信息是否可用于第一设备。 该方法还包括响应于确定第二呼叫者识别信息在第一设备可用而检索第二呼叫者识别信息。 该方法还包括在显示装置处呈现图形显示。 图形显示包括多个呼叫者信息字段。 基于第一呼叫者识别信息并且基于第二呼叫者识别信息填充多个呼叫者信息字段。 图形显示还包括用户可选择的编辑选项,以在来电期间编辑第二呼叫者识别信息。 该方法还包括响应于用户可选择编辑选项的选择来修改第二呼叫者识别信息。
    • 5. 发明授权
    • Methods of manufacturing transistors including forming a depression in a surface of a covering of resist material
    • 制造晶体管的方法,包括在抗蚀剂材料的覆盖物的表面中形成凹陷
    • US09425193B2
    • 2016-08-23
    • US14129630
    • 2012-06-22
    • Richard PriceScott White
    • Richard PriceScott White
    • H01L21/12H01L27/12H01L29/66H01L29/786H01L21/768H01L27/088H01L21/027
    • H01L27/088G03F7/0002H01L21/0272H01L21/28008H01L21/283H01L21/31144H01L21/76895H01L21/823437H01L21/823475H01L23/528H01L27/11803H01L27/1214H01L27/1225H01L27/1288H01L27/1292H01L29/66757H01L29/66969H01L29/78666H01L29/78675H01L29/7869H01L51/0541
    • A method of manufacturing a transistor comprising: providing a substrate, a region of semiconductive material supported by the substrate, and a region of electrically conductive material supported by the region of semiconductive material; forming at least one layer of resist material over said regions to form a covering of resist material over said regions; forming a depression in a surface of the covering of resist material, said depression extending over a first portion of said region of conductive material, said first portion separating a second portion of the conductive region from a third portion of the conductive region; removing resist material located under said depression so as to form a window, through said covering, exposing said first portion of the electrically conductive region; removing said first portion to expose a connecting portion of the region of semiconductive material, said connecting portion connecting the second portion to the third portion of the conductive region; forming a layer of dielectric material over the exposed portion of the region of semiconductive material; and depositing electrically conductive material to form a layer of electrically conductive material over said layer of dielectric material, the layer of dielectric material electrically isolating the layer of electrically conductive material from the second and third portions of the conductive region.
    • 一种制造晶体管的方法,包括:提供衬底,由衬底支撑的半导体材料的区域和由半导体材料区域支撑的导电材料区域; 在所述区域上形成至少一层抗蚀剂材料,以在所述区域上形成抗蚀剂材料的覆盖层; 在抗蚀剂材料的覆盖物的表面上形成凹陷,所述凹陷在所述导电材料区域的第一部分上延伸,所述第一部分将导电区域的第二部分与导电区域的第三部分分开; 去除位于所述凹陷下方的抗蚀剂材料,以形成通过所述覆盖物的窗口,暴露所述导电区域的所述第一部分; 去除所述第一部分以暴露所述半导体材料区域的连接部分,所述连接部分将所述第二部分连接到所述导电区域的第三部分; 在半导体材料的区域的暴露部分上形成介电材料层; 以及沉积导电材料以在所述介电材料层上形成导电材料层,所述介电材料层将所述导电材料层与所述导电区域的第二和第三部分电隔离。
    • 8. 发明授权
    • Methods and compositions based on diphtheria toxin-interleukin-3 conjugates
    • 基于白喉毒素 - 白介素-3缀合物的方法和组合物
    • US09181317B2
    • 2015-11-10
    • US13896923
    • 2013-05-17
    • Scott & White Memorial Hospital
    • Arthur E. Frankel
    • A61K38/20C07K14/54A61K35/14A61K35/28A61K38/16A61K47/48C07K14/34
    • C07K14/5403A61K35/14A61K35/28A61K38/00A61K38/164A61K38/202A61K47/642C07K14/34C07K2319/55Y10S514/885A61K2300/00
    • The present invention provides methods for inhibiting interleukin-3 receptor-expressing cells, and, in particular, inhibiting the growth of such cells by using a diphtheria toxin-human interleukin-3 conjugate (DT-IL3) that is toxic to cells expressing the interleukin-3 receptor. In preferred embodiments, the DT-IL3 conjugate is a fusion protein comprising amino acids 1-388 of diphtheria toxin fused via a peptide linker to full-length, human interleukin-3. In certain embodiments, the methods of the present invention relate to the administration of a DT-IL3 conjugate to inhibit the growth of cancer cells and/or cancer stem cells in humans, which cells express one or more subunits of the interleukin-3 receptor. Exemplary cells include myeloid leukemia cancer stem cells. In other embodiments, the methods of the present invention relate to ex vivo purging of bone marrow or peripheral blood to remove cells that express one or more subunits of the interleukin-3 receptor such that the purged bone marrow or peripheral blood is suitable, e.g., for autologous stem cell transplantation to restore hematopoietic function.
    • 本发明提供了抑制白细胞介素-3受体表达细胞的方法,特别是通过使用对表达白介素的细胞有毒性的白喉毒素 - 人白细胞介素-3缀合物(DT-IL3)来抑制这些细胞的生长 -3受体。 在优选的实施方案中,DT-IL3缀合物是包含通过肽连接体融合到全长人白细胞介素-3的白喉毒素的氨基酸1-388的融合蛋白。 在某些实施方案中,本发明的方法涉及施用DT-IL3缀合物以抑制人类癌细胞和/或癌干细胞的生长,所述细胞表达白细胞介素-3受体的一个或多个亚单位。 示例性细胞包括骨髓性白血病癌症干细胞。 在其他实施方案中,本发明的方法涉及骨髓或外周血的离体清除以去除表达白介素-3受体的一个或多个亚基的细胞,使得被清除的骨髓或外周血适合,例如, 用于自体干细胞移植以恢复造血功能。