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1. 发明授权

US08792286B2 Semiconductor memory device and operating method thereof 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08792286B2
公开(公告)日：2014-07-29
申请号：US13331013
申请日：2011-12-20
申请人： Seok Jin Joo
发明人： Seok Jin Joo
IPC分类号： G11C7/00
CPC分类号： G11C16/26
摘要： A semiconductor memory device includes a page buffer configured to store data read from a memory cell, a counter circuit configured to count the number of first data or second data in the read data for every read operation while the read operations are repeated a set number of times, and a control logic configured to determine the number of read operations and determine the read data of the memory cell based on the counted number.
摘要翻译：半导体存储器件包括：页缓冲器，被配置为存储从存储器单元读取的数据;计数器电路，被配置为对每个读操作读数据中的第一数据或第二数据的数量进行计数，同时读操作重复一定数量以及控制逻辑，被配置为基于所计数的数量来确定读取操作的数量并确定存储器单元的读取数据。

2. 发明授权

US07663918B2 Nonvolatile memory device and method of programming/reading the same 失效
标题翻译：非易失性存储器件及其编程/读取方法
公开(公告)号：US07663918B2
公开(公告)日：2010-02-16
申请号：US11292430
申请日：2005-12-02
申请人： Seok Jin Joo
发明人： Seok Jin Joo
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C16/24
摘要： A nonvolatile memory device includes a first memory block including a plurality of memory cells provided between a first drain selection transistor and a source selection transistor; and a second memory block including a plurality of memory cells provided between a second drain selection transistor and the source selection transistor. The first and second memory blocks share the same source selection transistor that is supplied with a voltage via a source selection line.
摘要翻译：非易失性存储器件包括：第一存储器块，包括设置在第一漏极选择晶体管和源选择晶体管之间的多个存储单元; 以及第二存储块，包括设置在第二漏极选择晶体管和源选择晶体管之间的多个存储单元。第一和第二存储器块共享通过源选择线提供电压的相同的源极选择晶体管。

3. 发明申请

US20100034021A1 METHOD OF CONTROLLING OPERATION OF FLASH MEMORY DEVICE 有权
标题翻译：控制闪存存储器件操作的方法
公开(公告)号：US20100034021A1
公开(公告)日：2010-02-11
申请号：US12493604
申请日：2009-06-29
申请人： Seok Jin Joo
发明人： Seok Jin Joo
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C11/5621 , G11C16/349 , G11C16/3495
摘要： According to a method of controlling the operation of a flash memory device including a number of memory blocks, a memory block of the memory blocks is first selected as a reference block. A program operation is performed on a memory cell included in the reference block. In order to check an operating characteristic of the reference block, a threshold voltage level of the programmed memory cell is read. Parameters for performing an operation of the flash memory device are determined based on the operating characteristic of the reference block. The parameters are stored in the reference block.
摘要翻译：根据控制包括多个存储器块的闪速存储器件的操作的方法，首先选择存储器块的存储器块作为参考块。对包括在参考块中的存储单元执行编程操作。为了检查参考块的工作特性，读取编程的存储器单元的阈值电压电平。基于参考块的操作特性来确定用于执行闪存设备的操作的参数。参数存储在参考块中。

4. 发明申请

US20090201727A1 READ METHOD OF MEMORY DEVICE 有权
标题翻译：读存储器件的方法
公开(公告)号：US20090201727A1
公开(公告)日：2009-08-13
申请号：US12422870
申请日：2009-04-13
申请人： Jong Hyun WANG , Jun Seop CHUNG , Seok Jin JOO
发明人： Jong Hyun WANG , Jun Seop CHUNG , Seok Jin JOO
IPC分类号： G11C16/02 , G11C16/04 , G11C16/06
CPC分类号： G11C16/28 , G06F11/1072 , G11C11/5642 , G11C29/00
摘要： A read method of a memory device including a MLC includes the steps of performing a data read operation according to a first read command; determining whether error correction of the read data is possible; if, as a result of the determination, error correction is difficult, performing a data read operation according to a second read command; determining whether error correction of read data is possible according to the second read command; and if, as a result of the determination, error correction is difficult, performing a data read operation according to a Nth (N≧3, N is an integer) read command.
摘要翻译：包括MLC的存储器件的读取方法包括以下步骤：根据第一读取命令执行数据读取操作; 确定读取数据的纠错是否可行; 如果作为确定的结果，难以进行纠错，则根据第二读取命令执行数据读取操作; 根据第二读取命令确定读取数据的纠错是否可行; 并且如果作为确定的结果，难以进行纠错，则根据Nth（N> = 3，N是整数）读取命令执行数据读取操作。

5. 发明授权

US07558115B2 Program method of flash memory device 有权
标题翻译：闪存设备的程序方法
公开(公告)号：US07558115B2
公开(公告)日：2009-07-07
申请号：US11479575
申请日：2006-06-30
申请人： Seok Jin Joo
发明人： Seok Jin Joo
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/10
摘要： A method for programming a non-volatile memory device includes applying a first dummy voltage to a Multi-Level Cell (MLC). A first program voltage is applied to the MLC to program the MLC, the first program voltage being applied to the MLC after the first dummy voltage has been applied to the MLC. The MLC is verified whether or not the MLC has been programmed correctly by the first program voltage. A second dummy voltage is applied to the MLC after the first dummy voltage has been applied, the second dummy voltage being N volt higher than the first dummy voltage, wherein the second dummy voltage applied to the MLC is of sufficiently low voltage, so that the second dummy voltage does not change an initial state of the MLC. A third dummy voltage is applied to the MLC after the second dummy voltage has been applied, the third dummy voltage being N volt higher than the second dummy voltage.
摘要翻译：用于对非易失性存储器件进行编程的方法包括将第一虚拟电压施加到多电平单元（MLC）。向MLC施加第一编程电压以对MLC进行编程，在将第一虚拟电压施加到MLC之后，将第一编程电压施加到MLC。验证MLC是否已被第一编程电压正确编程。在施加第一虚拟电压之后，向MLC施加第二虚拟电压，第二虚拟电压比第一虚拟电压高N伏，其中施加到MLC的第二虚拟电压具有足够低的电压，使得第二虚拟电压不改变MLC的初始状态。在施加第二虚拟电压之后，向MLC施加第三虚拟电压，第三虚拟电压比第二虚拟电压高N伏。

6. 发明申请

US20080205136A1 READ METHOD OF MEMORY DEVICE 有权
标题翻译：读存储器件的方法
公开(公告)号：US20080205136A1
公开(公告)日：2008-08-28
申请号：US11771963
申请日：2007-06-29
申请人： Jong Hyun WANG , Jun Seop Chung , Seok Jin Joo
发明人： Jong Hyun WANG , Jun Seop Chung , Seok Jin Joo
IPC分类号： G11C11/34
CPC分类号： G11C16/28 , G06F11/1072 , G11C11/5642 , G11C29/00
摘要： A read method of a memory device including a MLC includes the steps of performing a data read operation according to a first read command; determining whether error correction of the read data is possible; if, as a result of the determination, error correction is difficult, performing a data read operation according to a second read command; determining whether error correction of read data is possible according to the second read command; and if, as a result of the determination, error correction is difficult, performing a data read operation according to a Nth (N≧3, N is an integer) read command.
摘要翻译：包括MLC的存储器件的读取方法包括以下步骤：根据第一读取命令执行数据读取操作; 确定读取数据的纠错是否可行; 如果作为确定的结果，难以进行纠错，则根据第二读取命令执行数据读取操作; 根据第二读取命令确定读取数据的纠错是否可行; 如果作为确定的结果，难以进行纠错，则根据N（N> = 3，N是整数）读取命令执行数据读取操作。

7. 发明授权

US07304894B2 Non-volatile memory device and method of preventing hot electron program disturb phenomenon 有权
标题翻译：非易失性存储器件及防止热电子程序干扰现象的方法
公开(公告)号：US07304894B2
公开(公告)日：2007-12-04
申请号：US11291866
申请日：2005-11-30
申请人： Seok Jin Joo
发明人： Seok Jin Joo
IPC分类号： G11C16/04 , G11C5/14 , G11C7/00
CPC分类号： G11C16/12 , G11C16/3418
摘要： A method for preventing generation of program disturbance incurred by hot electrons in a NAND flash memory device. A channel boosting disturb-prevention voltage lower than a program-prohibit voltage applied to other word lines is applied to edge word lines coupled to memory cells that are nearest to select transistors. As a result, an electric field between the memory cells coupled to the edge word lines and the select transistors is weakened, and the energy of the hot electrons is reduced.
摘要翻译：一种用于防止在NAND闪速存储器件中由热电子产生的程序干扰的方法。施加到低于施加到其它字线的编程禁止电压的通道增强干扰防止电压被施加到耦合到最接近选择晶体管的存储器单元的边缘字线。结果，耦合到边缘字线和选择晶体管的存储单元之间的电场被削弱，并且热电子的能量减小。

8. 发明授权

US08891311B2 Semiconductor memory device and method of programming the same 有权
标题翻译：半导体存储器件及其编程方法
公开(公告)号：US08891311B2
公开(公告)日：2014-11-18
申请号：US13306047
申请日：2011-11-29
申请人： Seok Jin Joo
发明人： Seok Jin Joo
IPC分类号： G11C11/34 , G11C16/04 , G11C11/56
CPC分类号： G11C11/5628 , G11C16/0483
摘要： A program method of a semiconductor memory device includes performing a least significant bit (LSB) program operation for target LSB program cells of a selected page, increasing the threshold voltages of target most significant bit (MSB) program cells of the selected page before performing an MSB operation for the target MSB program cells, and performing the MSB program operation for the target MSB program cells after the increasing of the threshold voltages of the target MSB program cells.
摘要翻译：半导体存储器件的编程方法包括对所选择的页的目标LSB程序单元执行最低有效位（LSB）编程操作，在执行所选择的页之前增加所选页的目标最高有效位（MSB）程序单元的阈值电压用于目标MSB程序单元的MSB操作，并且在目标MSB程序单元的阈值电压增加之后对目标MSB程序单元执行MSB程序操作。

9. 发明授权

US08595593B2 Nonvolatile memory device having a copy back operation and method of operating the same 有权
标题翻译：具有复印操作的非易失性存储器件及其操作方法
公开(公告)号：US08595593B2
公开(公告)日：2013-11-26
申请号：US12606713
申请日：2009-10-27
申请人： Seok Jin Joo
发明人： Seok Jin Joo
IPC分类号： G06F11/00
CPC分类号： G06F11/1048 , G06F12/0246 , G06F2212/7209
摘要： A method of operating a nonvolatile memory device comprises performing a read operation to read data stored in a first memory cell block including first unit groups; detecting a second unit group from among the first unit groups, the second unit group having a number of error bits included in the read data, which is greater than a set number of bits and equal to or smaller than a maximum allowable number of bits which can be corrected through an error checking and correction (ECC) processing; and after the second unit group is detected, performing a copyback operation for moving the data, that are stored in the first memory cell block, to a second memory cell block.
摘要翻译：一种操作非易失性存储器件的方法包括执行读取操作以读取存储在包括第一单元组的第一存储单元块中的数据; 从所述第一单位组中检测出第二单位组，所述第二单位组具有包括在所述读取数据中的错误位数，所述第二单位组大于设定的位数，并且等于或小于最大可允许的位数可以通过错误检查和校正（ECC）处理来校正; 并且在检测到第二单元组之后，执行用于将存储在第一存储单元块中的数据移动到第二存储器单元块的回拷动作。

10. 发明申请

US20130077403A1 MEMORY AND PROGRAM METHOD THEREOF 有权
标题翻译：内存及其程序方法
公开(公告)号：US20130077403A1
公开(公告)日：2013-03-28
申请号：US13537608
申请日：2012-06-29
申请人： Seok-Jin JOO
发明人： Seok-Jin JOO
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/3459
摘要： A method of programming a nonvolatile memory includes: applying a common program pulse to program cells within each page of a memory region including two or more pages; applying one or more different program pulses to the program cells within each page of the memory region, according to target threshold voltages of the program cells; and programming each page of the memory region such that the program cells have their own target threshold voltages.
摘要翻译：一种对非易失性存储器进行编程的方法包括：将公共编程脉冲施加到包括两个或更多页的存储器区域的每一页内的编程单元; 根据所述程序单元的目标阈值电压将一个或多个不同的编程脉冲施加到所述存储器区域的每一页内的所述程序单元; 并且对存储器区域的每一页进行编程，使得编程单元具有其自己的目标阈值电压。

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