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1. 发明授权

US09455288B2 Image sensor structure to reduce cross-talk and improve quantum efficiency 有权
标题翻译：图像传感器结构，减少串扰，提高量子效率
公开(公告)号：US09455288B2
公开(公告)日：2016-09-27
申请号：US13476785
申请日：2012-05-21
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
摘要翻译：半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

2. 发明授权

US08987855B2 Pad structures formed in double openings in dielectric layers 有权
公开(公告)号：US08987855B2
公开(公告)日：2015-03-24
申请号：US13198057
申请日：2011-08-04
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
IPC分类号： H01L27/146 , H01L31/18 , H01L31/02
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.

3. 发明申请

US20140061737A1 Isolation for Semiconductor Devices 有权
标题翻译：半导体器件隔离
公开(公告)号：US20140061737A1
公开(公告)日：2014-03-06
申请号：US13598275
申请日：2012-08-29
申请人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
发明人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
IPC分类号： H01L27/146 , H01L31/18 , H01L27/088
CPC分类号： H01L27/14689 , H01L21/761 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L29/0649
摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
摘要翻译：提供一种用于隔离半导体器件的系统和方法。一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的介电材料。可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

4. 发明申请

US20130307104A1 Image Sensor Structure to Reduce Cross-Talk and Improve Quantum Efficiency 有权
标题翻译：图像传感器结构，以减少交叉和提高量子效率
公开(公告)号：US20130307104A1
公开(公告)日：2013-11-21
申请号：US13476785
申请日：2012-05-21
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
摘要翻译：半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

5. 发明授权

US08569807B2 Backside illuminated image sensor having capacitor on pixel region 有权
标题翻译：在像素区域上具有电容器的背面照明图像传感器
公开(公告)号：US08569807B2
公开(公告)日：2013-10-29
申请号：US12820656
申请日：2010-06-22
申请人： Chun-Chieh Chuang , Dun-Nian Yuang , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
发明人： Chun-Chieh Chuang , Dun-Nian Yuang , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L27/148 , H01L31/00
CPC分类号： H01L27/1461 , H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L28/40
摘要： A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.
摘要翻译：背面照明图像传感器包括具有前侧和后侧的半导体衬底，形成在半导体衬底的前侧上的传感器元件和形成在传感器元件上的电容器。

6. 发明申请

US20130020662A1 NOVEL CMOS IMAGE SENSOR STRUCTURE 有权
标题翻译：新型CMOS图像传感器结构
公开(公告)号：US20130020662A1
公开(公告)日：2013-01-24
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/02
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供其中设置有辐射感测区域的第一基板。该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。该方法包括将第二衬底的第一部分接合到第一衬底。该方法包括在接合之后，去除第二衬底的第二部分。该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

7. 发明授权

US08227288B2 Image sensor and method of fabricating same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08227288B2
公开(公告)日：2012-07-24
申请号：US12413752
申请日：2009-03-30
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的装置基板。该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。该方法还包括在器件衬底的背面上形成透明层。该方法还包括在透明层中形成开口，该开口与隔离结构对准。该方法还包括用不透明材料填充开口。

8. 发明申请

US20110298072A1 RIDGE STRUCTURE FOR BACK SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的RIDGE结构
公开(公告)号：US20110298072A1
公开(公告)日：2011-12-08
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器包括设置在基板中的第一和第二放射线检测装置。第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。第一和第二脊各自具有第一折射率值。第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

9. 发明授权

US07803647B2 Optical transmission improvement on multi-dielectric structure in advance CMOS imager 有权
标题翻译： CMOS传感器提供多介质结构的光传输
公开(公告)号：US07803647B2
公开(公告)日：2010-09-28
申请号：US11672681
申请日：2007-02-08
申请人： Wen-De Wang , Dun-Nian Yaung , Tzu-Hsuan Hsu , Shine Chung
发明人： Wen-De Wang , Dun-Nian Yaung , Tzu-Hsuan Hsu , Shine Chung
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/14625 , H01L27/14687
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a sensor element disposed in a semiconductor substrate; an inter-level dielectric (ILD) disposed on the semiconductor substrate; and a trench disposed in the ILD, overlying and enclosing the sensor element, and filled with a first dielectric material.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括设置在半导体衬底中的传感器元件; 布置在所述半导体衬底上的级间电介质（ILD）; 以及设置在ILD中的沟槽，覆盖并封闭传感器元件，并且填充有第一介电材料。

10. 发明申请

US20100213560A1 PAD DESIGN FOR BACKSIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的PAD设计
公开(公告)号：US20100213560A1
公开(公告)日：2010-08-26
申请号：US12708167
申请日：2010-02-18
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/14636 , H01L23/481 , H01L27/14621 , H01L27/1464 , H01L27/14683
摘要： A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
摘要翻译：半导体图像传感器装置包括第一和第二半导体衬底。像素阵列和控制电路形成在第一基板的第一表面中。在第一基板的第一表面上形成互连层，并将控制电路电连接到像素阵列。顶部导电层形成在互连层上，以经由互连层与至少一个控制电路或像素阵列电连接。第二基板的表面接合到顶部导电层。导电硅通孔（TSV）通过第二衬底，并且与顶部导电层具有电连接性。端子形成在第二基板的相对表面上，并电连接到TSV。

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