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1. 发明授权

US09397380B2 Guided wave applicator with non-gaseous dielectric for plasma chamber 有权
标题翻译：带等离子体室的非气体介质的导波器
公开(公告)号：US09397380B2
公开(公告)日：2016-07-19
申请号：US13360652
申请日：2012-01-27
申请人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
IPC分类号： H01P3/16 , H01L21/02 , H05H1/46 , H01J37/32
CPC分类号： H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译：导波装置，其包括两个导电波导壁和波导电介质。波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

2. 发明申请

US20110135844A1 LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING 有权
标题翻译：大面积等离子体加工室与电极射频匹配
公开(公告)号：US20110135844A1
公开(公告)日：2011-06-09
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/24 , C23C16/455 , C23C16/458 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

3. 发明申请

US20100089319A1 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体加工室的RF返回路径
公开(公告)号：US20100089319A1
公开(公告)日：2010-04-15
申请号：US12576991
申请日：2009-10-09
申请人： Carl A. Sorensen , John M. White , Jozef Kudela , Jonghoon Baek , Jriyan Jerry Chen , Steve McPherson , Soo Young Choi , Robin L. Tiner
发明人： Carl A. Sorensen , John M. White , Jozef Kudela , Jonghoon Baek , Jriyan Jerry Chen , Steve McPherson , Soo Young Choi , Robin L. Tiner
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件，衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。

4. 发明申请

US20080276868A1 RIGID RF TRANSMISSION LINE WITH EASY REMOVAL SECTION 审中-公开
标题翻译： RIGID射频发射线，轻松移除部分
公开(公告)号：US20080276868A1
公开(公告)日：2008-11-13
申请号：US12039616
申请日：2008-02-28
申请人： Carl A. Sorensen , John M. White , Kim Neill
发明人： Carl A. Sorensen , John M. White , Kim Neill
IPC分类号： C23C16/453 , H01B7/17
CPC分类号： H01P1/045 , H01J37/32082 , H01J37/32174
摘要： An RF feed for a processing apparatus is disclosed. Coupling an RF generator to an RF matching network by a rigid RF feed lessens the amount of power that is lost during transmission from the generator to the matching network. The rigid RF feed comprises an inverted J shaped section that decouples the generator from the matching network whenever servicing the chamber is necessary. The J shape section has two parallel portions coupled together by a perpendicular portion. The J shaped section may be removed as a one piece assembly by uncoupling the J shaped section at a location disposed near the top of the chamber and a location near the floor of the chamber. The connections between the J shaped section and the remainder of the RF feed face the same direction to ensure easy coupling and decoupling without twisting and/or bending any portion of the rigid RF feed.
摘要翻译：公开了一种用于处理装置的RF馈送。通过刚性RF馈送将RF发生器耦合到RF匹配网络可以减少在从发生器到匹配网络的传输过程中丢失的功率量。刚性射频馈电包括倒置的J形截面，每当需要维修腔室时，将发生器与匹配网络分离。 J形截面具有通过垂直部分联接在一起的两个平行部分。 J形截面可以作为一个单独的组件被移除，该J形截面在设置在室顶部附近的位置处以及靠近该室底部的位置脱离J形截面。 J形截面和RF进料的其余部分之间的连接面向相同的方向，以确保容易的耦合和解耦，而不会扭曲和/或弯曲刚性RF进给的任何部分。

5. 发明授权

US06191390B1 Heating element with a diamond sealing material 失效
标题翻译：带金刚石密封材料的加热元件
公开(公告)号：US06191390B1
公开(公告)日：2001-02-20
申请号：US09311906
申请日：1999-05-14
申请人： Carl A. Sorensen , Daniel Winkler
发明人： Carl A. Sorensen , Daniel Winkler
IPC分类号： H05B318
CPC分类号： H05B3/48 , C23C16/46
摘要： A substrate support plate including a heating element for use in a process chamber is described. The heating element includes an outer sheath, a heating filament and a thermally-conductive and electrically insulative sealing material. The sealing material comprises a diamond powder.
摘要翻译：描述了包括用于处理室的加热元件的基板支撑板。加热元件包括外护套，加热丝和导热且电绝缘的密封材料。密封材料包括金刚石粉末。

6. 发明申请

US20130126331A1 Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber 有权
标题翻译：用于等离子室的非气体介质的导波涂敷器
公开(公告)号：US20130126331A1
公开(公告)日：2013-05-23
申请号：US13360652
申请日：2012-01-27
申请人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
IPC分类号： H01P3/16 , H05H1/46 , H01L21/02
CPC分类号： H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译：导波装置，其包括两个导电波导壁和波导电介质。波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

7. 发明申请

US20090197015A1 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：US20090197015A1
公开(公告)日：2009-08-06
申请号：US12344210
申请日：2008-12-24
申请人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： C23C16/513
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.
摘要翻译：系统，方法和装置包括用于在基板上沉积膜的等离子体处理室。等离子体处理室包括具有接地板，背板和存在于接地板和背板之间的不均匀性的盖组件。不均匀性可能会干扰RF波均匀性，并导致接地板和背板的部分之间的阻抗不平衡。不均匀性可以包括非均匀表面的结构或减小的间隔。存在不均匀表面的减小的间隔，其中在第一端处的接地板和背板之间的第一距离在第二端处不同于接地板和背板之间的第二距离。该结构可以是2cm至10cm厚，覆盖背板的20％至50％，并且位于远离存在于腔室内的不连续处。

8. 发明授权

US06552297B2 RF matching network with distributed outputs 有权
公开(公告)号：US06552297B2
公开(公告)日：2003-04-22
申请号：US10003129
申请日：2001-11-01
申请人： Wendell T. Blonigan , Carl A. Sorensen
发明人： Wendell T. Blonigan , Carl A. Sorensen
IPC分类号： B23K1000
CPC分类号： H01J37/32174 , H01J37/32082
摘要： An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

9. 发明授权

US5815047A Fast transition RF impedance matching network for plasma reactor ignition 失效
标题翻译：用于等离子体反应器点火的快速转换RF阻抗匹配网络
公开(公告)号：US5815047A
公开(公告)日：1998-09-29
申请号：US563849
申请日：1995-11-27
申请人： Carl A. Sorensen , Wendell T. Blonigan , John White
发明人： Carl A. Sorensen , Wendell T. Blonigan , John White
IPC分类号： H03H7/40
CPC分类号： H03H7/40
摘要： An impedance matching network for an RF coupled plasma reactor having RF excitation apparatus receiving RF power through the impedance matching network from an RF generator for producing a plasma in the reactor has at least one capacitor connected to the output of the RF generator and having a capacitance value providing an impedance match to the plasma impedance during a steady state of the plasma, at least a first rapidly tunable capacitor connected in parallel with the one capacitor, the rapidly tunable capacitor being rapidly switchable between a high capacitance value providing a match to the plasma impedance during the onset of plasma ignition and a lesser minimum capacitance value, and a controller for rapidly switching the rapidly tunable capacitor from the high to the lesser capacitance value upon reaching the plasma steady state.
摘要翻译：一种用于RF耦合等离子体反应器的阻抗匹配网络，其具有RF激发装置，其通过来自RF发生器的阻抗匹配网络接收RF功率，用于在电抗器中产生等离子体，具有连接到RF发生器输出的至少一个电容器，在等离子体的稳定状态期间提供与等离子体阻抗的阻抗匹配的值，至少与一个电容器并联连接的第一快速可调谐电容器，快速可调谐电容器可在提供与等离子体的匹配的高电容值之间快速切换等离子体点火开始期间的阻抗和较小的最小电容值，以及用于在快速调节电容器达到等离子体稳态时从快速切换到较小电容值的控制器。

10. 发明授权

US09382621B2 Ground return for plasma processes 有权
标题翻译：等离子体工艺的接地回路
公开(公告)号：US09382621B2
公开(公告)日：2016-07-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

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