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1. 发明申请

US20220336210A1 CLEANING COMPOSITION 有权
公开(公告)号：US20220336210A1
公开(公告)日：2022-10-20
申请号：US17720580
申请日：2022-04-14
申请人： ENTEGRIS, INC.
发明人： Jun Liu , Michael L. White , Daniela White , Emanuel I. Cooper
IPC分类号： H01L21/02
摘要： Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

2. 发明授权

US10475658B2 Formulations to selectively etch silicon and germanium 有权
公开(公告)号：US10475658B2
公开(公告)日：2019-11-12
申请号：US15108696
申请日：2014-12-29
申请人： ENTEGRIS, INC.
发明人： Steven Bilodeau , Emanuel I. Cooper
IPC分类号： H01L21/306 , H01L21/3213
摘要： Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

3. 发明授权

US10138117B2 Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility 有权
公开(公告)号：US10138117B2
公开(公告)日：2018-11-27
申请号：US14908888
申请日：2014-07-31
申请人： Entegris, Inc.
发明人： Li-Min Chen , Steven Lippy , Daniela White , Emanuel I. Cooper
IPC分类号： B81C1/00 , C09K13/08 , G03F7/40 , H01L21/3213 , C09K13/10 , H01L21/02 , H01L21/311
摘要： Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.

4. 发明申请

US20180240680A1 USE OF NON-OXIDIZING STRONG ACIDS FOR THE REMOVAL OF ION-IMPLANTED RESIST 审中-公开
公开(公告)号：US20180240680A1
公开(公告)日：2018-08-23
申请号：US15892775
申请日：2018-02-09
申请人： Entegris, Inc.
发明人： Steven Bilodeau , Emanuel I. Cooper , Jaeseok Lee , WonLae Kim , Jeffrey A. Barnes
IPC分类号： H01L21/311 , H01L21/027 , G03F7/42 , H01L21/02
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/02057 , H01L21/0273
摘要： A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

5. 发明申请

US20180197746A1 FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM 审中-公开
公开(公告)号：US20180197746A1
公开(公告)日：2018-07-12
申请号：US15742334
申请日：2016-07-07
申请人： Entegris, Inc.
发明人： Steven Bilodeau , Emanuel I. Cooper
IPC分类号： H01L21/306 , C09K13/08 , C09K13/06
CPC分类号： H01L21/30604 , C09K13/06 , C09K13/08
摘要： Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

6. 发明申请

US20160276155A1 DOPANT PRECURSORS FOR MONO-LAYER DOPING 审中-公开
公开(公告)号：US20160276155A1
公开(公告)日：2016-09-22
申请号：US15037940
申请日：2014-11-22
申请人： ENTEGRIS, INC.
发明人： Thomas M. Cameron , Emanuel I. Cooper , Sung Han
IPC分类号： H01L21/22 , H01L21/228 , H01L21/225
CPC分类号： H01L21/2225 , H01L21/2254 , H01L21/228
摘要： A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate. The film of dopant material is applied from a dopant composition selected from among: (i) dopant compositions comprising an aqueous or glycol solution comprising an inorganic dopant compound; (ii) dopant compositions comprising an arsenic, phosphorus, boron, or antimony compound in which ligands or moieties coordinated to an arsenic, phosphorus, boron, or antimony central atom have coordination bond energies that are lower than those associated with coordinating bonds of said central atom to oxygen or carbon; (iii) dopant compositions comprising a coordinated moiety that selectively and covalently bonds to the substrate; (iv) dopant compositions comprising a compound that undergoes hydrolysis and alcoholysis to covalently bond a dopant functionality to the substrate in said film of dopant material; (v) dopant compositions comprising precursor vapor of an organodopant compound; (vi) dopant compositions interactive with a surface functionality of the substrate to bind the dopant composition to the substrate, wherein the substrate comprises a silicon surface comprising said surface functionality; (vii) dopant compositions interactive with the substrate to covalently bond with a pretreated and/or modified silicon surface thereof; and (viii) dopant compositions interactive with the substrate to bond with the substrate on a silicon surface thereof that has been modified by a treatment comprising at least one of: (A) contacting the silicon surface with a chemical solution; (B) exposing the silicon surface to plasma; and (C) exposing the silicon surface to ultraviolet radiation.

7. 发明授权

US11365351B2 Wet etching composition and method 有权
公开(公告)号：US11365351B2
公开(公告)日：2022-06-21
申请号：US17066152
申请日：2020-10-08
申请人： ENTEGRIS, INC.
发明人： YoungMin Kim , Michael White , Daniela White , Emanuel I. Cooper , Steven M. Bilodeau
IPC分类号： C09K13/06 , H01L21/311 , H01J37/32
摘要： The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

8. 发明授权

US11164738B2 Compositions and methods for removing ceria particles from a surface 有权
公开(公告)号：US11164738B2
公开(公告)日：2021-11-02
申请号：US15874388
申请日：2018-01-18
申请人： Entegris, Inc.
发明人： Daniela White , Thomas Parson , Michael White , Emanuel I. Cooper , Atanu Das
IPC分类号： C09G1/04 , H01L21/02 , H01L21/321 , C08L33/08 , C08L33/10 , C09G1/16
摘要： A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

9. 发明授权

US10176979B2 Post-CMP removal using compositions and method of use 有权
公开(公告)号：US10176979B2
公开(公告)日：2019-01-08
申请号：US14378842
申请日：2013-02-15
申请人： ENTEGRIS, INC.
发明人： Jun Liu , Jeffrey A. Barnes , Emanuel I. Cooper , Laisheng Sun , Elizabeth Thomas , Jason Chang
IPC分类号： H01L21/02 , C11D1/72 , C11D3/20 , C11D1/66 , C11D1/22 , C11D1/38 , B08B3/08 , C11D11/00 , C11D3/39 , C11D7/06 , C11D3/04 , C11D3/34
摘要： An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

10. 发明申请

US20180240674A1 PASSIVATION OF GERMANIUM SURFACES 审中-公开
公开(公告)号：US20180240674A1
公开(公告)日：2018-08-23
申请号：US15752640
申请日：2016-08-12
申请人： Entegris, Inc.
发明人： Steven Bilodeau , Emanuel I. Cooper , Hsing-Chen Wu , Min-Chieh Yang
IPC分类号： H01L21/28 , H01L21/762 , H01L21/02
CPC分类号： H01L21/28255 , H01L21/02381 , H01L21/02532 , H01L21/02664 , H01L21/762
摘要： Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

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