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    • 10. 发明授权
    • Photocoupler
    • 光电耦合器
    • US09099602B2
    • 2015-08-04
    • US14161872
    • 2014-01-23
    • Kabushiki Kaisha Toshiba
    • Yoshio NoguchiMami YamamotoNaoya Takai
    • H01L31/16H01L31/14H01L25/16
    • H01L25/167H01L31/02002H01L31/14H01L31/162H01L31/167H01L2224/48247H01L2924/00H01L2924/13091
    • A photocoupler includes: a support substrate; a MOSFET; a light receiving element; a light emitting element; and a bonding layer. The support substrate includes an insulating layer, input and output terminals. The MOSFET is bonded to the support substrate. The MOSFET has a first surface having an operation region. The light receiving element includes p-n junction and is bonded to the MOSFET. The light receiving element has first and second surfaces. The first surface includes a light reception region, a first electrode, and a second electrode. The light emitting element is connected to the input terminal. The light emitting element has first and second surfaces. The first surface includes first and second electrodes. The second surface has a light emitting region. The bonding layer is configured to bond the light emitting element to the light reception region.
    • 光电耦合器包括:支撑衬底; 一个MOSFET; 光接收元件; 发光元件; 和粘结层。 支撑基板包括绝缘层,输入和输出端子。 MOSFET结合到支撑衬底。 MOSFET具有具有操作区域的第一表面。 光接收元件包括p-n结并且结合到MOSFET。 光接收元件具有第一和第二表面。 第一表面包括光接收区域,第一电极和第二电极。 发光元件连接到输入端子。 发光元件具有第一和第二表面。 第一表面包括第一和第二电极。 第二表面具有发光区域。 接合层被配置为将发光元件结合到光接收区域。