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1. 发明申请

US20170198002A1 High Purity Low Endotoxin Carbohydrate (HPLE) Compositions, and Methods of Isolation Thereof 审中-公开
公开(公告)号：US20170198002A1
公开(公告)日：2017-07-13
申请号：US15316614
申请日：2014-12-23
申请人： Aventor Performance Materials, Inc.
发明人： Bhaktavachalam THIYAGARAJAN , Martina COX , Nandu DEORKAR
IPC分类号： C07H1/06 , C07H3/02 , C07H3/04
CPC分类号： C07H1/06 , C07H1/00 , C07H3/02 , C07H3/04
摘要： Provided herein is a highly pure carbohydrate composition, and a method of making a highly pure carbohydrate composition. The method includes passing an aqueous carbohydrate solution through an anion exchange chromatography column including a polyethyleneimine (PEI) chromatographic media to obtain a purified solution, and isolating a highly pure carbohydrate composition from the purified solution.

2. 发明授权

US08338350B2 Gluconic acid containing photoresist cleaning composition for multi-metal device processing 有权
标题翻译：含有葡萄糖酸的光刻胶清洗组合物用于多金属器件加工
公开(公告)号：US08338350B2
公开(公告)日：2012-12-25
申请号：US12998499
申请日：2009-10-22
申请人： Seiji Inaoka
发明人： Seiji Inaoka
IPC分类号： C11D7/50
CPC分类号： C11D3/222 , C11D3/382 , C11D7/26 , C11D7/263 , C11D7/265 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02071
摘要： A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water.
摘要翻译：适用于清洁多金属微电子器件的微电子光致抗蚀剂清洁组合物，并且当存在使用水的后续漂洗步骤时，不会发生任何明显或显着的电偶腐蚀。

3. 发明授权

US08557757B2 Multipurpose acidic, organic solvent based microelectronic cleaning composition 有权
标题翻译：多功能酸性，有机溶剂型微电子清洗组合物
公开(公告)号：US08557757B2
公开(公告)日：2013-10-15
申请号：US13138467
申请日：2010-01-14
申请人： Chien-Pin S. Hsu , Glenn Westwood , William R. Gemmill
发明人： Chien-Pin S. Hsu , Glenn Westwood , William R. Gemmill
IPC分类号： C11D7/50
CPC分类号： C11D7/50 , C11D7/08 , C11D7/261 , C11D7/34 , C11D7/36 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/02068
摘要： A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.
摘要翻译：一种用于清洁微电子或纳米电子器件的清洁组合物，所述清洁组合物具有HF作为组合物中唯一的酸和唯一的氟化物，至少一种选自砜和硒酮的一级溶剂，至少一种多羟基烷基或芳基醇具有金属离子络合或结合位点的共溶剂和水，以及任选的至少一种膦酸缓蚀剂化合物，并且不含胺，碱和其它盐。

4. 发明授权

US08168577B2 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion 有权
标题翻译：后等离子体蚀刻/灰渣和含有四氟硼酸根离子的硅基抗反射涂层去除剂组合物
公开(公告)号：US08168577B2
公开(公告)日：2012-05-01
申请号：US12811257
申请日：2009-02-05
申请人： William R. Gemmill
发明人： William R. Gemmill
IPC分类号： C11D7/50 , G03F7/42
CPC分类号： C11D11/0047 , C11D7/10 , C11D7/34 , H01L21/02068 , H01L21/31133
摘要： A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ion, and d) optionally at least one polyhydric alcohol is especially useful to clean etch/ash residues from microelectronic substrates or device having both Si-based anti-reflective coatings and low-k dielectrics.
摘要翻译：一种微电子清洁组合物：a）组合物的至少一种有机砜的约80％至约99％重量; b）占组合物水重量的约0.5％至约19％; 和c）组合物的约0.5重量％至约10重量％的至少一种提供四氟硼酸根离子的组分，以及d）任选的至少一种多元醇特别可用于清洁来自微电子衬底的蚀刻/灰渣残留物或具有两者的装置 Si基抗反射涂层和低k电介质。

5. 发明授权

US07928046B2 Stripping and cleaning compositions for microelectronics 有权
标题翻译：微电子的剥离和清洁组合物
公开(公告)号：US07928046B2
公开(公告)日：2011-04-19
申请号：US11349635
申请日：2006-02-08
申请人： Joseph M. Ilardi , David C. Skee , Sean M. Kane , Karen E. Trovalli
发明人： Joseph M. Ilardi , David C. Skee , Sean M. Kane , Karen E. Trovalli
IPC分类号： C11D7/32
CPC分类号： C11D3/0073 , C11D3/046 , C11D3/30 , C11D7/10 , C11D7/32 , C11D7/3209 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/02071 , H01L21/6704
摘要： Aqueous, silicate free, cleaning compositions of about pH 9 or below and method of using the cleaning compositions for cleaning microelectronic substrates, which compositions are able to essentially completely clean such substrates and produce essentially no metal corrosion of the metal elements of such substrates. The aqueous cleaning compositions of this invention have (a) water, (b) at least one of ammonium and quaternary ammonium ions and (c) at least one of hypophosphite (H2PO2−) and/or phosphite (HPO32−) ions. The cleaning compositions also may contain fluoride ions. Optionally, the composition may contain other components such as organic solvents, oxidizing agent, surfactants, corrosion inhibitors and metal complexing agents.
摘要翻译：大约pH9或更低的水性无硅酸盐清洗组合物以及使用清洁组合物清洁微电子衬底的方法，该组合物能够基本上完全清洁这些衬底并基本上不产生这种衬底的金属元素的金属腐蚀。本发明的水性清洁组合物具有（a）水，（b）铵和季铵离子中的至少一种和（c）次磷酸盐（H 2 PO 2）和/或亚磷酸盐（HPO 32 - ）离子中的至少一种。清洁组合物也可以含有氟离子。任选地，组合物可以含有其它组分，例如有机溶剂，氧化剂，表面活性剂，腐蚀抑制剂和金属络合剂。

6. 发明授权

US08497233B2 Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers 有权
标题翻译：用于从半导体器件晶片清洗离子注入的光致抗蚀剂的剥离组合物
公开(公告)号：US08497233B2
公开(公告)日：2013-07-30
申请号：US13138468
申请日：2010-02-18
申请人： Glenn Westwood
发明人： Glenn Westwood
IPC分类号： C11D7/50 , C11D11/00
CPC分类号： C11D11/0047 , C11D3/0073 , C11D7/08 , C11D7/105 , C11D7/32 , C11D7/36 , C11D7/5004 , C11D7/5009 , G03F7/423 , G03F7/426 , H01L21/31133
摘要： A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.
摘要翻译：一种用于从半导体器件的表面去除高剂量离子注入的光致抗蚀剂的组合物，该组合物具有至少一种具有闪点> 65℃的溶剂，至少一种提供硝鎓离子的组分和至少一种膦酸腐蚀抑制剂化合物，以及使用这种组合物从半导体器件的表面去除高剂量离子注入的光致抗蚀剂。

7. 发明申请

US20120283419A1 Separation of protein monomers from aggregates by solid weak anion exchange support functionalized with amine moieties 审中-公开
标题翻译：通过用胺部分官能化的固体弱阴离子交换支持物分离蛋白质单体与聚集体
公开(公告)号：US20120283419A1
公开(公告)日：2012-11-08
申请号：US13373064
申请日：2011-11-03
申请人： Bhaktavachalam Thiyagarajan , Wei Guo , Nandu Deorkar
发明人： Bhaktavachalam Thiyagarajan , Wei Guo , Nandu Deorkar
IPC分类号： C07K1/18 , C07K16/00
CPC分类号： C07K16/065 , C07K5/0215
摘要： A flow-through process for separating protein monomer from aggregates of that protein in a solution containing both protein monomer and aggregates of that protein, the process includes the steps of1) contacting the solution at a pH of from 4 to 7 with a weak anion exchange media comprised of multiple primary, secondary and/or tertiary amine functionalization groups whereby the protein monomer flows through the media without binding thereto and the aggregates are retained on the media, and2) collecting the flow-through as purified protein monomer.
摘要翻译：一种用于在含有蛋白质单体和蛋白质的聚集体的溶液中分离蛋白质单体与该蛋白质的聚集体的流通过程，该方法包括以下步骤：1）将pH为4至7的溶液与弱阴离子由多个伯胺，仲胺和/或叔胺官能化基团组成的交换介质，由此蛋白质单体流过培养基而不与其结合，聚集体保留在培养基上，和2）以纯化的蛋白质单体收集流通。

8. 发明授权

US08183195B2 Peroxide activated oxometalate based formulations for removal of etch residue 有权
标题翻译：用于去除蚀刻残留物的过氧化物活化的氧化金属酸盐基配方
公开(公告)号：US08183195B2
公开(公告)日：2012-05-22
申请号：US12522716
申请日：2008-01-28
申请人： Glenn L. Westwood
发明人： Glenn L. Westwood
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/14 , C11D7/3245
摘要： Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0.01% to about 5% by weight (expressed as % SiO2) of at least one water-soluble metal ion-free silicate corrosion inhibitors; (d) from about 0.01% to about 10% by weight of at least one metal chelating agent, and (e) from more than 0 to about 2.0% by weight of at least one oxymetalate are provided in accordance with this invention. Such formulations are combined with a peroxide such that a peroxymetalate is formed to produce form a microelectronic cleaning composition. Used to remove contaminants and residue from microelectronic devices, such as microelectronic substrates.
摘要翻译：高碱性水性制剂包括（a）水，（b）至少一种不含金属离子的碱，足以产生最终配方碱性pH，（c）约0.01重量％至约5重量％ SiO 2）至少一种水溶性金属离子的硅酸盐腐蚀抑制剂; （d）根据本发明提供约0.01重量％至约10重量％的至少一种金属螯合剂，和（e）大于0至约2.0重量％的至少一种氧化金属铝。这样的制剂与过氧化物组合，使得形成过氧金属盐以形成微电子清洁组合物。用于从微电子器件（如微电子基板）中除去污染物和残留物。

9. 发明申请

US20110306534A1 MULTIPURPOSE ACIDIC, ORGANIC SOLVENT BASED MICROELECTRONIC CLEANING COMPOSITION 有权
标题翻译：多用途酸，有机溶剂型微电子清洗组合物
公开(公告)号：US20110306534A1
公开(公告)日：2011-12-15
申请号：US13138467
申请日：2010-01-14
申请人： Chien-Pin S. Hsu , Glenn Westwood , William R. Gemmill
发明人： Chien-Pin S. Hsu , Glenn Westwood , William R. Gemmill
IPC分类号： G03F7/42
CPC分类号： C11D7/50 , C11D7/08 , C11D7/261 , C11D7/34 , C11D7/36 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/02068
摘要： A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.
摘要翻译：一种用于清洁微电子或纳米电子器件的清洁组合物，所述清洁组合物具有HF作为组合物中唯一的酸和唯一的氟化物，至少一种选自砜和硒酮的一级溶剂，至少一种多羟基烷基或芳基醇具有金属离子络合或结合位点的共溶剂和水，以及任选的至少一种膦酸缓蚀剂化合物，并且不含胺，碱和其它盐。

10. 发明授权

US08044009B2 Compositions for cleaning ion implanted photoresist in front end of line applications 失效
标题翻译：用于清洗离子植入光刻胶的组合物在前端应用
公开(公告)号：US08044009B2
公开(公告)日：2011-10-25
申请号：US11817874
申请日：2006-03-13
申请人： Sean Michael Kane , Steven A. Lippy
发明人： Sean Michael Kane , Steven A. Lippy
IPC分类号： G03F7/42
CPC分类号： G03F7/423 , C11D3/3947 , C11D7/08 , C11D7/10 , C11D7/3263 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D11/0047 , G03F7/426 , H01L21/31133
摘要： A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.
摘要翻译：线路前端（FEOL）剥离和清洁组合物用于从晶片衬底清洁未曝光的离子植入光致抗蚀剂，包括：a）至少一种有机剥离溶剂，b）氟化铵，氟化铵或氟化铵中的至少一种的氟离子氟化氢，c）至少一种选自无机或有机酸的酸化剂，以及d）水，与组合物中任选地还含有氧化剂。

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