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1. 发明授权

US10939046B2 LED flicker mitigation for motion pictures 有权
公开(公告)号：US10939046B2
公开(公告)日：2021-03-02
申请号：US15828010
申请日：2017-11-30
申请人： BAE Systems Imaging Solutions Inc. , BAE Systems Imaging Solutions Inc. , BAE Systems Imaging Solutions Inc.
发明人： Alberto M. Magnani , Christopher R. Adams , Calvin B. Ward
IPC分类号： H04N5/355 , H04N5/235 , H04N9/68 , G06T5/00 , H04N5/353 , H04N5/365 , H04N5/359
摘要： An apparatus for taking moving pictures, a method for taking moving pictures, and a novel pixel sensor array are disclosed. The apparatus includes a rectangular imaging array, a plurality of column processing circuits, and a controller. The rectangular imaging array is characterized by a plurality of rows and columns of UHDR pixel sensors and a plurality of readout lines, and a plurality of row select lines. Each column processing circuit is connected to a corresponding one of the plurality of readout lines. The controller causes the rectangular imaging array to measure a plurality of images of a scene that is illuminated by a pulsating light source characterized by an illumination period and a dark period. Each of the images is generated in a frame period which includes an exposure period and a dead period, the dead period being less than the dark period.

2. 发明授权

US10937835B2 Low-noise integrated post-processed photodiode 有权
公开(公告)号：US10937835B2
公开(公告)日：2021-03-02
申请号：US16198247
申请日：2018-11-21
申请人： BAE Systems Imaging Solutions Inc.
发明人： Robert Daniel McGrath
IPC分类号： H01L27/30 , H01L27/146 , H01L51/44
摘要： A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

3. 发明授权

US10128296B2 Imaging array with improved dynamic range utilizing parasitic photodiodes 有权
公开(公告)号：US10128296B2
公开(公告)日：2018-11-13
申请号：US14591873
申请日：2015-01-07
申请人： BAE Systems Imaging Solutions Inc.
发明人： Boyd Fowler
IPC分类号： H01L27/146 , H04N5/355
摘要： A pixel sensor having a main photodiode and a parasitic photodiode and a method for reading out that pixel sensor are disclosed. The parasitic photodiode also serves the function of a floating diffusion node in the pixel. The pixel sensor is read by first determining the exposure as measured by the parasitic photodiode and then determining the exposure as read by the main photodiode. One of the two exposure measurements is chosen as the pixel output. The main photodiode has a light conversation efficiency chosen such that one of the two measurements will provide a measurement of the exposure over a dynamic range that is greater than that of either the main photodiode or the parasitic photodiode utilized separately.

4. 发明授权

US10057530B2 High dynamic range imaging sensor array 有权
公开(公告)号：US10057530B2
公开(公告)日：2018-08-21
申请号：US15740585
申请日：2016-08-18
申请人： BAE Systems Imaging Solutions Inc.
发明人： Bo Mu , Alberto M. Magnani , Stephen W. Mims
IPC分类号： H04N5/378 , H04N5/355 , H04N5/361 , H04N5/341 , H04N5/365
CPC分类号： H04N5/378 , H01L27/14609 , H04N5/341 , H04N5/35536 , H04N5/35545 , H04N5/35563 , H04N5/361 , H04N5/365 , H04N5/3651 , H04N5/3658
摘要： An apparatus having a rectangular imaging array characterized by a plurality of pixel sensors and a plurality of readout lines is disclosed. The apparatus has a plurality of column processing circuits, each column processing circuit being connected to a corresponding one of the readout lines and a plurality of signal injectors, one signal injector being connected to each of the readout lines. Each signal injector causes one of a predetermined number of voltages to be coupled to that readout line. An exposure for each of the pixel sensors is determined during image recording periods. The signal injectors inject a plurality of calibration voltages into the readout lines during calibration periods, and determines a gain function of an amplifier in one of the column processing circuits by measuring an output of the amplifier for the plurality of calibration voltages, the calibration period is between the imaging recording periods.

5. 发明授权

US09591275B2 Hybrid camera sensor for night vision and day color vision 有权
标题翻译：混合摄像头传感器用于夜视和日间色觉
公开(公告)号：US09591275B2
公开(公告)日：2017-03-07
申请号：US12892467
申请日：2010-09-28
申请人： Xinqiao Liu , Feng Xiao , Boyd Fowler
发明人： Xinqiao Liu , Feng Xiao , Boyd Fowler
IPC分类号： H04N5/335 , H04N9/04 , H01L27/146
CPC分类号： H04N9/045 , H01L27/1461
摘要： A hybrid imaging array and method for using the same is disclosed. The image array includes a low-light imaging array and a color imaging array. The two imaging arrays can be utilized separately or in conjunction with one another. The low-light imaging array is optimized for night vision or situations in which the light levels are too low to allow a conventional color image to be formed by the color imaging array. The color imaging array is optimized for daylight or color photography. The low-light imaging array can be utilized in conjunction with the color imaging array to provide a color image with reduced noise.
摘要翻译：公开了一种混合成像阵列及其使用方法。图像阵列包括低光成像阵列和彩色成像阵列。两个成像阵列可以单独使用或者彼此结合使用。低光成像阵列被优化用于夜视或其中光水平太低而不能由彩色成像阵列形成常规彩色图像的情况。彩色成像阵列针对日光或彩色摄影进行了优化。低光成像阵列可以与彩色成像阵列一起使用以提供具有降低的噪声的彩色图像。

6. 发明申请

US20140300389A1 Sample and Hold Circuit with Reduced Noise 有权
标题翻译：采样和保持电路噪声降低
公开(公告)号：US20140300389A1
公开(公告)日：2014-10-09
申请号：US13856402
申请日：2013-04-03
申请人： BAE SYSTEMS IMAGING SOLUTIONS, INC.
发明人： Boyd Fowler , Peter Bartkovjak
IPC分类号： H03K5/1252 , H03K17/16
CPC分类号： H03K5/1252 , G11C27/026
摘要： A sample and hold circuit and a method for sampling a signal are disclosed. The sample and hold circuit includes first and second switches, first, second, and third capacitors, and an amplifier. The amplifier receives a signal to be sampled on a first input. The first capacitor is characterized by a first capacitance and has a first terminal connected to an output of the amplifier by the first switch. The second capacitor is characterized by a second capacitance and has a second terminal connected to the output of the amplifier by the second switch. The third capacitor connects the first and second terminals. The amplifier is configured to form a capacitive transimpedance amplifier having the third capacitor as a feedback circuit when the first switch is in a non-conducting state and the second switch is in a conducting state.
摘要翻译：公开了采样保持电路和采样信号的方法。采样和保持电路包括第一和第二开关，第一，第二和第三电容器以及放大器。放大器接收要在第一输入上采样的信号。第一电容器的特征在于第一电容，并且具有通过第一开关连接到放大器的输出端的第一端子。第二电容器的特征在于第二电容，并且具有通过第二开关连接到放大器的输出端的第二端子。第三电容器连接第一和第二端子。当第一开关处于非导通状态并且第二开关处于导通状态时，放大器被配置为形成具有作为反馈电路的第三电容器的电容跨阻放大器。

7. 发明授权

US08071410B2 Multi spectral sensor 有权
标题翻译：多光谱传感器
公开(公告)号：US08071410B2
公开(公告)日：2011-12-06
申请号：US12637633
申请日：2009-12-14
申请人： David D. Wen , Xinqiao Liu , Ahn N. Vu , Steven Kiyoshi Onishi
发明人： David D. Wen , Xinqiao Liu , Ahn N. Vu , Steven Kiyoshi Onishi
IPC分类号： H01L21/00 , H01L21/336 , H01L21/8234 , H01L21/331
CPC分类号： H01L27/14812 , H01L27/14837 , H01L31/03529
摘要： A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.
摘要翻译：公开了一种在第一和第二电极之间具有光转换元件的光传感器。光转换元件包括具有第一和第二表面的半导体材料体。半导体材料的主体是第一导电类型，并且具有浓度梯度的掺杂元素，其产生具有从第一表面到第二表面单调变化的幅度的第一静电场。偏置电路在第一和第二电极之间施加可变电位以产生具有与第一静电场的方向相反的方向的第二静电场和由电位确定的幅度。其中一个电极对于预定波段的光是透明的。半导体材料的主体可以包括外延体，其具有作为距离一个表面的距离的函数的单调递增的掺杂元素的浓度。

8. 发明授权

US11462581B2 Photodetector adapted to provide additional color information 有权
公开(公告)号：US11462581B2
公开(公告)日：2022-10-04
申请号：US16305551
申请日：2017-05-31
申请人： BAE Systems Imaging Solutions Inc.
发明人： John W. Ladd , James E. Crouch , Alberto M. Magnani
IPC分类号： H01L27/146 , H04N5/357
摘要： An apparatus for forming a color image of a scene and a method for utilizing that apparatus are disclosed. The apparatus includes a plurality of pixel sensors. Each pixel sensor includes a first photodetector includes first main photodiode and a first floating diffusion node. The first main photodiode is characterized by a first light conversion efficiency as a function of wavelength of a light signal incident thereon. The first floating diffusion node includes a parasitic photodiode characterized by a second light conversion efficiency as a function of the wavelength. The second light conversion efficiency is different from the first light conversion efficiency as a function of wavelength. A controller generates an intensity of light in each of a plurality of wavelength bands for the pixel sensor utilizing a measurement of the light signal by each of the first main photodiode and the first parasitic photodiode in that photodetector.

9. 发明授权

US11252353B2 Ultra-low noise amplifier adapted for CMOS imaging sensors 有权
公开(公告)号：US11252353B2
公开(公告)日：2022-02-15
申请号：US16626471
申请日：2017-06-29
申请人： BAE Systems Imaging Solutions Inc.
发明人： Hung T. Do , Chenguang Gong , Alberto M. Magnani
IPC分类号： H04N5/335 , H04N5/357 , H03F1/26 , H03F3/04 , H04N5/378 , H03F3/45
摘要： A low-noise amplifier is disclosed. The amplifier includes a signal amplifier having an amplifier signal output, a first filter capacitor, a buffer amplifier having a buffer amplifier input and a buffer amplifier output; and a switching network. The first filter capacitor has first and second terminals. The second terminal is connected to a power rail. The amplifier signal output is connected to the buffer amplifier input by a first direct current path and the buffer amplifier output to the first terminal of the first filter capacitor by a second direct current path during a first time period. The amplifier signal output is connected directly to the first terminal of the first filter capacitor by a third direct current path during a second time period, and the amplifier signal output to the first terminal of the first filter capacitor through a resistor during a third time period.

10. 发明申请

US20210327952A1 TIME DELAY INTEGRATION STRUCTURE FOR COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR IMAGING SENSOR 有权
公开(公告)号：US20210327952A1
公开(公告)日：2021-10-21
申请号：US17273191
申请日：2018-11-21
申请人： BAE Systems Imaging Solutions Inc.
发明人： Robert Daniel McGrath
IPC分类号： H01L27/148 , H01L27/146
摘要： A system is provided for time delay integration in complementary metal oxide semiconductor imaging sensors, the system comprising: a two dimensional parallel charge transfer structure comprising at least one column of CMOS Image sensor pinned photodiodes; each the diode in the column being connected to the next the diode by a two phase transfer gate, each the transfer gate having a barrier and a well configured such that a flow of charge in the column is unidirectional.

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