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1. 发明授权

US09768322B2 Metal oxide TFT with improved source/drain contacts and reliability 有权
公开(公告)号：US09768322B2
公开(公告)日：2017-09-19
申请号：US15225592
申请日：2016-08-01
申请人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
发明人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
IPC分类号： H01L29/786 , H01L29/49 , H01L29/66 , H01L23/00 , H01L21/8234 , H01L21/4763 , H01L21/324 , H01L21/321 , H01L21/383 , H01L21/477 , H01L21/428 , H01L29/45 , H01L21/44 , H01L23/31
CPC分类号： H01L29/7869 , H01L21/321 , H01L21/324 , H01L21/383 , H01L21/428 , H01L21/44 , H01L21/47635 , H01L21/477 , H01L21/823418 , H01L23/3171 , H01L23/564 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

2. 发明授权

US08435832B2 Double self-aligned metal oxide TFT 有权
标题翻译：双自对准金属氧化物TFT
公开(公告)号：US08435832B2
公开(公告)日：2013-05-07
申请号：US13406824
申请日：2012-02-28
申请人： Chan-Long Shieh , Gang Yu
发明人： Chan-Long Shieh , Gang Yu
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L29/42384 , H01L29/66969 , H01L29/78621
摘要： A method of fabricating MOTFTs on transparent substrates includes positioning opaque gate metal on the front surface of a transparent substrate and depositing transparent gate dielectric, transparent metal oxide semiconductor material, and passivation material on the gate metal and the surrounding area. Portions of the passivation material are exposed from the rear surface of the substrate. Exposed portions are removed to define a channel area overlying the gate area. A relatively thick conductive metal material is selectively deposited on the exposed areas of the semiconductor material to form thick metal source/drain contacts. The selective deposition includes either plating or printing and processing a metal paste.
摘要翻译：在透明基板上制造MOTFT的方法包括在透明基板的前表面上定位不透明栅极金属，并在栅极金属和周围区域上沉积透明栅极电介质，透明金属氧化物半导体材料和钝化材料。钝化材料的一部分从基板的后表面露出。去除暴露部分以限定覆盖栅极区域的沟道区域。相对厚的导电金属材料被选择性地沉积在半导体材料的暴露区域上以形成厚的金属源极/漏极触点。选择性沉积包括电镀或印刷和加工金属浆料。

3. 发明授权

US08193594B2 Two-terminal switching devices and their methods of fabrication 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US08193594B2
公开(公告)日：2012-06-05
申请号：US13015013
申请日：2011-01-27
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L21/00 , H01L47/00 , H01L29/04
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

4. 发明授权

US10109647B2 MOTFT with un-patterned etch-stop 有权
公开(公告)号：US10109647B2
公开(公告)日：2018-10-23
申请号：US15173481
申请日：2016-06-03
申请人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
发明人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
IPC分类号： H01L29/10 , H01L27/12 , H01L21/02 , H01L29/24 , H01L29/66 , H01L29/786
摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

5. 发明授权

US09755004B2 Full-color active matrix organic light emitting display with hybrid structure 有权
公开(公告)号：US09755004B2
公开(公告)日：2017-09-05
申请号：US15009323
申请日：2016-01-28
申请人： CBRITE Inc.
发明人： Chan-Long Shieh , Gang Yu
IPC分类号： H01J1/62 , H01J63/04 , H01J9/24 , H01L27/32 , H01L51/52 , H01L27/12
CPC分类号： H01L27/3218 , H01L27/1225 , H01L27/1255 , H01L27/322 , H01L27/3244 , H01L27/3262 , H01L27/3265 , H01L51/5284
摘要： A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

6. 发明授权

US09608017B2 Reversed flexible TFT back-panel by glass substrate removal 有权
公开(公告)号：US09608017B2
公开(公告)日：2017-03-28
申请号：US14635865
申请日：2015-03-02
申请人： Chan-Long Shieh , Fatt Foong , Gang Yu , Guangming Wang
发明人： Chan-Long Shieh , Fatt Foong , Gang Yu , Guangming Wang
IPC分类号： H01L27/12 , H01L29/786 , H01L51/05 , H01L51/56
CPC分类号： H01L27/1266 , H01L27/1222 , H01L27/1225 , H01L29/78669 , H01L29/78678 , H01L29/7869 , H01L51/003 , H01L51/0541 , H01L51/0545 , H01L51/56 , H01L2227/323 , H01L2227/326
摘要： The process of fabricating a flexible TFT back-panel includes depositing etch stop material on a glass support. A matrix of contact pads, gate electrodes and gate dielectric are deposited overlying the etch stop material. Vias are formed through the dielectric in communication with each pad. A matrix of TFTs is formed by depositing and patterning metal oxide semiconductor material to form an active layer of each TFT overlying the gate electrode. Source/drain metal is deposited on the active layer and in the vias in contact with the pads, the source/drain metal defining source/drain terminals of each TFT. Passivation material is deposited in overlying relationship to the TFTs. A color filter layer is formed on the passivation material and a flexible plastic carrier is affixed to the color filter. The glass support member and the etch stop material are then etched away to expose a surface of each of the pads.

7. 发明授权

US09379247B2 High mobility stabile metal oxide TFT 有权
标题翻译：高迁移率稳定金属氧化物TFT
公开(公告)号：US09379247B2
公开(公告)日：2016-06-28
申请号：US13536641
申请日：2012-06-28
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong , Tian Xiao , Juergen Musolf
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong , Tian Xiao , Juergen Musolf
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/467 , H01L21/4763 , H01L23/535 , H01L29/0649 , H01L29/41733 , H01L29/66969 , H01L29/78696
摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.
摘要翻译：一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

8. 发明授权

US09356156B2 Stable high mobility MOTFT and fabrication at low temperature 有权
标题翻译：稳定的高移动性MOTFT和低温制造
公开(公告)号：US09356156B2
公开(公告)日：2016-05-31
申请号：US13902514
申请日：2013-05-24
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong , Juergen Musolf
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong , Juergen Musolf
IPC分类号： H01L29/786 , H01L29/66 , H01L29/423
CPC分类号： H01L29/66969 , H01L21/02063 , H01L21/02565 , H01L21/02631 , H01L21/76805 , H01L21/76814 , H01L21/76895 , H01L27/1225 , H01L29/247 , H01L29/42384 , H01L29/517 , H01L29/518 , H01L29/66742 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696 , H01L2021/775
摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm−3 to approximately 5×1019 cm−3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.
摘要翻译：制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。通过溅射将载流子传输结构沉积在栅极介电层上。载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。非晶金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。源极/漏极触点位于保护层上并与之电接触。

9. 发明授权

US09129868B2 Mask level reduction for MOFET 有权
标题翻译： MOFET的掩模级别降低
公开(公告)号：US09129868B2
公开(公告)日：2015-09-08
申请号：US13481781
申请日：2012-05-26
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong , Liu-Chung Lee
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong , Liu-Chung Lee
IPC分类号： H01L21/00 , H01L27/12
CPC分类号： H01L27/1288 , H01L27/1225
摘要： A method of fabricating a TFT and IPS with reduced masking operations includes a substrate, a gate, a layer of gate dielectric on the gate and surrounding substrate surface and a semiconducting metal oxide on the gate dielectric. A channel protection layer overlies the gate to define a channel area in the semiconducting metal oxide. A S/D metal layer is patterned on the channel protection layer and a portion of the exposed semiconducting metal oxide to define an IPS area. An organic dielectric material is patterned on the S/D terminals and at an opposed side of the IPS area. The S/D metal is etched to expose the semiconducting metal oxide defining a first IPS electrode. A passivation layer covers the first electrode and a layer of transparent conductive material is patterned on the passivation layer to define a second IPS electrode overlying the first electrode.
摘要翻译：制造具有减小的掩模操作的TFT和IPS的方法包括基板，栅极，栅极上的栅极电介质层和周围的衬底表面以及栅极电介质上的半导体金属氧化物。沟道保护层覆盖栅极以限定半导体金属氧化物中的沟道区。 S / D金属层在通道保护层和暴露的半导体金属氧化物的一部分上被图案化以限定IPS区域。在S / D端子和IPS区域的相对侧上构图有机电介质材料。蚀刻S / D金属以暴露限定第一IPS电极的半导体金属氧化物。钝化层覆盖第一电极，并且在钝化层上图案化透明导电材料层以限定覆盖第一电极的第二IPS电极。

10. 发明授权

US09099563B2 Stable amorphous metal oxide semiconductor 有权
标题翻译：稳定的非晶态金属氧化物半导体
公开(公告)号：US09099563B2
公开(公告)日：2015-08-04
申请号：US14552641
申请日：2014-11-25
申请人： Chan-Long Shieh , Gang Yu
发明人： Chan-Long Shieh , Gang Yu
IPC分类号： H01L29/10 , H01L29/786 , H01L29/04 , H01L27/12 , H01L21/16 , H01L21/00
CPC分类号： H01L29/04 , H01L21/00 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/16 , H01L21/28556 , H01L27/1214 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L51/5012
摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
摘要翻译：薄膜半导体器件具有包括非晶半导体离子金属氧化物和非晶绝缘共价金属氧化物的混合物的半导体层。一对端子被定位成与半导体层连通并且限定导电通道，并且栅极端子定位成与导电沟道连通并进一步定位成控制沟道的导通。本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。

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