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    • 3. 发明授权
    • Light emitting diode die-bonding with magnetic field
    • 发光二极管与磁场密封
    • US08119427B1
    • 2012-02-21
    • US12985992
    • 2011-01-06
    • Tsung-Hung Lu
    • Tsung-Hung Lu
    • H01L21/00
    • H01L33/44H01L24/95H01L33/52H01L2224/48091H01L2224/49107H01L2224/73265H01L2224/83121H01L2224/83191H01L2224/83192H01L2224/92247H01L2924/181H01L2933/0033H01L2924/00014H01L2924/00012
    • In one aspect of the present invention, a method of LED die-bonding includes coating the back side of an LED chip with a magnetic material, placing the LED chip in a packaging cup such that the back side of the LED chip is in contact with the bottom of the packaging cup, applying a magnetic field in a region near the bottom of the packaging cup so as to exert a magnetic force on the LED chip via the magnetic material coated on the back side of the LED chip, thereby holding the LED chip in place against the bottom of the packaging cup, while the magnetic field is applied, bonding one end of a first conductive wire to an anode of the LED and the other end of the first conductive wire to a first electrode, and bonding one end of a second conductive wire to a cathode of the LED and the other end of the second conductive wire to a second electrode, where the first electrode and the second electrode are attached to the packaging cup, and filling the packaging cup with an epoxy, and curing the epoxy.
    • 在本发明的一个方面中,LED芯片接合的方法包括用磁性材料涂覆LED芯片的背面,将LED芯片放置在包装杯中,使得LED芯片的背面与 包装杯的底部,在包装杯底部附近的区域施加磁场,以通过涂覆在LED芯片背面的磁性材料在LED芯片上施加磁力,从而保持LED 在施加磁场的同时将芯片置于适当位置,同时将第一导线的一端接合到LED的阳极,将第一导线的另一端接合到第一电极,并将一端 的第二导线连接到LED的阴极并且第二导线的另一端连接到第二电极,其中第一电极和第二电极附接到包装杯,并且用环氧树脂填充包装杯,以及 治愈 e环氧树脂。
    • 4. 发明申请
    • LIGHT EMITTING DEVICES
    • 发光装置
    • US20120037946A1
    • 2012-02-16
    • US12855316
    • 2010-08-12
    • Kuo Hui YuChien-Chun WangChang Hsin Chu
    • Kuo Hui YuChien-Chun WangChang Hsin Chu
    • H01L33/02H01L33/36H01L33/00
    • H01L33/38H01L33/20
    • In one aspect of the invention, a light emitting device includes a substrate, and a multilayered structure having an n-type semiconductor layer formed in a light emitting region and a non-emission region on the substrate, an active layer formed in the light emitting region on the n-type semiconductor layer, and a p-type semiconductor layer formed in the light emitting region on the active layer. The light emitting device also includes a p-electrode formed in the light emitting region and electrically coupled to the p-type semiconductor layer, and an n-electrode formed in the non-emission region and electrically coupled to the n-type semiconductor layer. Further, the light emitting device also includes an insulator formed between the n-electrode and the n-type semiconductor layer in the first portion of the non-emission region to define at least one ohmic contact such that the n-electrode in the first portion of the non-emission region is electrically coupled to the n-type semiconductor layer through the at least one ohmic contact.
    • 在本发明的一个方面中,一种发光器件包括衬底和在衬底上形成于发光区域和非发射区域中的n型半导体层的多层结构,形成在发光区域中的有源层 n型半导体层上的发光区域中形成的p型半导体层。 发光器件还包括形成在发光区域中并电耦合到p型半导体层的p电极和形成在非发射区域中并电耦合到n型半导体层的n电极。 此外,发光器件还包括形成在非发射区域的第一部分中的n电极和n型半导体层之间的绝缘体,以限定至少一个欧姆接触,使得第一部分中的n电极 的非发射区域通过至少一个欧姆接触电耦合到n型半导体层。