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1. 发明申请

US20090085148A1 MULTI-DIRECTIONAL TRENCHING OF A PLURALITY OF DIES IN MANUFACTURING SUPERJUNCTION DEVICES 审中-公开
标题翻译：制造超级设备中多种多样的方式的多方向性
公开(公告)号：US20090085148A1
公开(公告)日：2009-04-02
申请号：US12031909
申请日：2008-02-15
申请人： Takeshi Ishiguro , Kenji Sugiura , Hugh J. Griffin
发明人： Takeshi Ishiguro , Kenji Sugiura , Hugh J. Griffin
IPC分类号： H01L21/764 , H01L27/10
CPC分类号： H01L29/0634
摘要： A method of manufacturing a superjunction device includes providing a semiconductor wafer having a plurality of dies. A first plurality of trenches having a first orientation are formed in a first die. A second plurality of trenches having a second orientation are formed in a second die. The second orientation is different from the first orientation.
摘要翻译：制造超结装置的方法包括提供具有多个管芯的半导体晶片。在第一模具中形成具有第一取向的第一多个沟槽。具有第二取向的第二多个沟槽形成在第二管芯中。第二方向与第一方向不同。

2. 发明申请

US20080315345A1 Technique for Stable Processing of Thin/Fragile Substrates 有权
标题翻译：薄/脆性基板的稳定加工技术
公开(公告)号：US20080315345A1
公开(公告)日：2008-12-25
申请号：US12203995
申请日：2008-09-04
申请人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
发明人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
IPC分类号： H01L21/302 , H01L23/58
CPC分类号： H01L21/78
摘要： A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.
摘要翻译：绝缘体上半导体（SOI）晶片包括具有彼此相对的第一和第二主表面的半导体衬底。电介质层设置在半导体衬底的第一主表面的至少一部分上。器件层具有第一主表面和第二主表面。器件层的第二主表面设置在与半导体衬底相对的电介质层的表面上。在设备层的第一主表面上限定多个预期的管芯区域。多个预期的模具区域彼此分离。多个裸片存取沟槽从第二主表面形成在半导体衬底中。多个管芯存取沟槽中的每一个通常设置在多个预期管芯区域中的至少一个相应的一个的下方。

3. 发明申请

US20080315247A1 BONDED-WAFER SUPERJUNCTION SEMICONDUCTOR DEVICE 有权
标题翻译：粘结超声波半导体器件
公开(公告)号：US20080315247A1
公开(公告)日：2008-12-25
申请号：US12191035
申请日：2008-08-13
申请人： Conor Brogan , Cormac MacNamara , Hugh J. Griffin , Robin Wilson
发明人： Conor Brogan , Cormac MacNamara , Hugh J. Griffin , Robin Wilson
IPC分类号： H01L29/00
CPC分类号： H01L21/2007 , H01L21/76251 , H01L29/0634 , H01L29/66143 , H01L29/872
摘要： A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer of a second conductivity disposed on the first device layer, a third device layer of the first conductivity disposed on the second device layer and a fourth device layer of the second conductivity disposed on the third device layer. A trench is formed in the multi-layer device stack. A mesa is defined by the trench. The mesa has first and second sidewalls. A first anode/cathode layer is disposed on a first sidewall of the multi-layer device stack, and a second anode/cathode layer is disposed on the second sidewall of the multi-layer device stack.
摘要翻译：接合晶片半导体器件包括半导体衬底，设置在半导体衬底的第一主表面上的掩埋氧化物层和多层器件堆叠。多层器件堆叠包括设置在掩埋氧化物层上的第一导电体的第一器件层，设置在第一器件层上的第二导电体的第二器件层，设置在第二器件上的第一导电体的第三器件层层和设置在第三器件层上的第二导电体的第四器件层。在多层器件堆叠中形成沟槽。台面由沟槽定义。台面具有第一和第二侧壁。第一阳极/阴极层设置在多层器件堆叠的第一侧壁上，第二阳极/阴极层设置在多层器件堆叠的第二侧壁上。

4. 发明申请

US20080036015A1 SEMICONDUCTOR DEVICES WITH SEALED, UNLINED TRENCHES AND METHODS OF FORMING SAME 有权
标题翻译：具有密封，不可见光束的半导体器件及其形成方法
公开(公告)号：US20080036015A1
公开(公告)日：2008-02-14
申请号：US11838359
申请日：2007-08-14
申请人： Samuel Anderson , Koon So
发明人： Samuel Anderson , Koon So
IPC分类号： H01L29/94 , H01L21/8232
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/66143 , H01L29/66734 , H01L29/7811 , H01L29/872
摘要： A semiconductor device includes unlined and sealed trenches and methods for forming the unlined and sealed trenches. More particularly, a superjunction semiconductor device includes unlined, and sealed trenches. The trench has sidewalls formed of the semiconductor material. The trench is sealed with a sealing material such that the trench is air-tight. First and second regions are separated by the trench. The first region may include a superjunction Schottky diode or MOSFET. In an alternative embodiment, a plurality of regions are separated by a plurality of unlined and sealed trenches.
摘要翻译：半导体器件包括无衬里和密封的沟槽以及用于形成无衬里和密封沟槽的方法。更具体地说，超结半导体器件包括无衬里和密封的沟槽。沟槽具有由半导体材料形成的侧壁。沟槽用密封材料密封，使得沟槽是气密的。第一和第二区域被沟槽分开。第一区域可以包括超连接肖特基二极管或MOSFET。在替代实施例中，多个区域被多个无衬里和密封的沟槽隔开。

5. 发明申请

US20080299698A1 Front Lip PIN/NIP Diode Having a Continuous Anode/Cathode 有权
标题翻译：具有连续阳极/阴极的前唇PIN / NIP二极管
公开(公告)号：US20080299698A1
公开(公告)日：2008-12-04
申请号：US12175586
申请日：2008-07-18
申请人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
发明人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
IPC分类号： H01L31/00 , H01L21/30
CPC分类号： H01L31/105 , H01L27/1446 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.
摘要翻译：光检测器包括具有彼此相对的第一和第二主表面的半导体衬底。光电检测器包括形成在第一主表面中的至少一个沟槽和第一阳极/阴极区域，其具有靠近第一主表面和至少一个沟槽的侧壁附近形成的第一导电性。光电检测器包括靠近第二主表面的第二阳极/阴极区域。第二阳极/阴极区具有与第一导电性相反的第二导电性。至少一个沟槽延伸到半导体衬底的第二主表面。

6. 发明授权

US07429772B2 Technique for stable processing of thin/fragile substrates 有权
公开(公告)号：US07429772B2
公开(公告)日：2008-09-30
申请号：US11380457
申请日：2006-04-27
申请人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
发明人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/78
摘要： A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

7. 发明申请

US20070085117A1 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes 有权
标题翻译：使用隔离扩散作为相邻光电二极管之间的串扰抑制剂的光电检测器阵列
公开(公告)号：US20070085117A1
公开(公告)日：2007-04-19
申请号：US11548546
申请日：2006-10-11
申请人： Robin Wilson , Conor Brogan , Hugh Griffin , Cormac MacNamara
发明人： Robin Wilson , Conor Brogan , Hugh Griffin , Cormac MacNamara
IPC分类号： H01L31/113
CPC分类号： H01L27/14683 , H01L27/1463
摘要： A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.
摘要翻译：光电检测器阵列包括具有相对的第一和第二主表面的半导体衬底，靠近第一主表面的第一掺杂浓度的第一层和靠近第二主表面的第二掺杂浓度的第二层。光电检测器包括形成在第一主表面中的至少一个导电通孔和靠近第一主表面和至少一个导电通孔的阳极/阴极区域。通孔延伸到第二主表面。导电通孔通过第一电介质材料与半导体衬底隔离。阳极/阴极区域是与第一导电性相反的第二导电性。光电检测器包括形成在第一主表面中并延伸穿过半导体衬底的第一层的至少第二层半导体衬底的第三掺杂浓度的掺杂隔离区。

8. 发明申请

US20090026586A1 Superjunction Device Having Oxide Lined Trenches and Method for Manufacturing a Superjunction Device Having Oxide Lined Trenches 审中-公开
标题翻译：具有氧化物衬里沟槽的超结构装置和制造具有氧化物衬里沟槽的超级结装置的方法
公开(公告)号：US20090026586A1
公开(公告)日：2009-01-29
申请号：US10596720
申请日：2006-04-21
申请人： Samuel Anderson
发明人： Samuel Anderson
IPC分类号： H01L29/06 , H01L21/22
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/407 , H01L29/41741 , H01L29/7395 , H01L29/7802 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes doping with a dopant of a second conductivity the first sidewall of the mesa, and doping with a dopant of a second conductivity the second sidewall of the mesa. A dopant of the first conductivity is then used to dope the first sidewall of the mesa, and the dopant of the first conductivity is used to dope the second sidewall of the at least one mesa. At least the trenches adjacent to the at least one mesa are then lined with an oxide material and are then filled with one of a semi-insulating material and an insulating material.
摘要翻译：制造半导体器件的方法包括提供具有沟槽和台面的半导体衬底。至少一个台面具有第一和第二侧壁。该方法包括用第二导电性的掺杂剂掺杂台面的第一侧壁，并掺杂具有第二导电性的掺杂剂，台阶的第二侧壁。然后使用第一导电性的掺杂剂来掺杂台面的第一侧壁，并且使用第一导电性的掺杂剂来掺杂至少一个台面的第二侧壁。至少邻近至少一个台面的沟槽然后用氧化物材料衬里，然后用半绝缘材料和绝缘材料中的一种填充。

9. 发明申请

US20080315269A1 PHOTODETECTOR ARRAY USING ISOLATION DIFFUSIONS AS CROSSTALK INHIBITORS BETWEEN ADJACENT PHOTODIODES 有权
标题翻译：使用隔离扩散剂作为相容光刻胶之间的波形抑制剂的光电子阵列
公开(公告)号：US20080315269A1
公开(公告)日：2008-12-25
申请号：US12204371
申请日：2008-09-04
申请人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
发明人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
IPC分类号： H01L31/113
CPC分类号： H01L27/14683 , H01L27/1463
摘要： A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.
摘要翻译：光电检测器阵列包括具有相对的第一和第二主表面的半导体衬底，靠近第一主表面的第一掺杂浓度的第一层和靠近第二主表面的第二掺杂浓度的第二层。光电检测器包括形成在第一主表面中的至少一个导电通孔和靠近第一主表面和至少一个导电通孔的阳极/阴极区域。通孔延伸到第二主表面。导电通孔通过第一电介质材料与半导体衬底隔离。阳极/阴极区域是与第一导电性相反的第二导电性。光电检测器包括形成在第一主表面中并延伸穿过半导体衬底的第一层的至少第二层半导体衬底的第三掺杂浓度的掺杂隔离区。

10. 发明申请

US20080258239A1 METHODS FOR MANUFACTURING A TRENCH TYPE SEMICONDUCTOR DEVICE HAVING A THERMALLY SENSITIVE REFILL MATERIAL 有权
标题翻译：用于制造具有热敏感材料的TRENCH型半导体器件的方法
公开(公告)号：US20080258239A1
公开(公告)日：2008-10-23
申请号：US11962523
申请日：2007-12-21
申请人： Takeshi Ishiguro
发明人： Takeshi Ishiguro
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66712 , H01L21/26586 , H01L29/0634 , H01L29/0653
摘要： Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.
摘要翻译：用于制造沟槽型半导体器件的方法包括在执行高温处理步骤之后重新填充沟槽。该方法允许热不稳定材料用作装置沟槽的补充材料。还提供了包含热不稳定填充材料的沟槽型半导体器件。特别地，提供了制造方法和包含有机填充材料的沟槽型半导体器件的器件。

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