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1. 发明授权

US10735672B2 Image sensors with metal-covered optical black pixels 有权
公开(公告)号：US10735672B2
公开(公告)日：2020-08-04
申请号：US16341901
申请日：2017-10-19
申请人： INVISAGE TECHNOLOGIES, INC.
发明人： Jae Park , Carey Tanner , Emanuele Mandelli
IPC分类号： H04N5/361 , H04N5/33 , H01L27/146 , H04N5/345 , H04N5/359 , H04N5/369 , H04N5/374 , H04N9/04
摘要： Imaging apparatus (100, 200, 1200) includes a semiconductor substrate (312) and an array (202) of pixel circuits (1202, 1204), which are arranged in a matrix on the semiconductor substrate and define respective pixels (212) of the apparatus. Pixel electrodes (1208) are respectively coupled to the pixel circuits, and a photosensitive (1206) is formed over the pixel electrodes. A common electrode (1207), which is at least partially transparent, is formed over the photosensitive film. An opaque metallization layer (1214) is formed over the photosensitive film on one or more of the pixels and coupled in ohmic contact to the common electrode. Control circuitry (208, 1212) is coupled to apply a bias to the common electrode via the opaque metallization layer while correcting a black level of the output values from the pixels using the signals received from the one or more of the pixels over which the opaque metallization layer is formed.

2. 发明授权

US10516845B2 Sensors and systems for the capture of scenes and events in space and time 有权
公开(公告)号：US10516845B2
公开(公告)日：2019-12-24
申请号：US15939323
申请日：2018-03-29
申请人： InVisage Technologies, Inc.
发明人： Edward Hartley Sargent , Jess Jan Young Lee , Hui Tian , Emanuele Mandelli
IPC分类号： H04N5/378 , H01L27/146 , H04N5/232 , H04N5/347 , H04N5/361 , G02B5/20 , H04N5/33 , G02B23/12
摘要： Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.

3. 发明授权

US09972652B2 Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode 有权
公开(公告)号：US09972652B2
公开(公告)日：2018-05-15
申请号：US15345461
申请日：2016-11-07
申请人： InVisage Technologies, Inc.
发明人： Edward Hartley Sargent , Rajsapan Jain , Igor Constantin Ivanov , Michael R. Malone , Michael Charles Brading , Hui Tian , Pierre Henri Rene Della Nave , Jess Jan Young Lee
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H04N5/369 , H04N5/376 , H04N5/378
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H04N5/369 , H04N5/3765 , H04N5/378
摘要： In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.

4. 发明授权

US09871160B2 Materials, systems and methods for optoelectronic devices 有权
公开(公告)号：US09871160B2
公开(公告)日：2018-01-16
申请号：US14949767
申请日：2015-11-23
申请人： InVisage Technologies, Inc.
发明人： Hui Tian , Edward Sargent
IPC分类号： H01L27/148 , H01L31/101 , H01L31/036 , H01L27/146
CPC分类号： H01L31/1013 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14647 , H01L27/14652 , H01L27/14687 , H01L27/14692 , H01L31/036
摘要： A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

5. 发明授权

US09538102B2 Systems and methods for color binning 有权
标题翻译：彩色分组的系统和方法
公开(公告)号：US09538102B2
公开(公告)日：2017-01-03
申请号：US14010095
申请日：2013-08-26
申请人： InVisage Technologies, Inc.
发明人： Hui Tian , Jess Jan Young Lee , Pierre Henri Rene Della Nave
IPC分类号： H01L27/00 , H01J40/14 , H04N5/347 , H04N5/33 , H04N9/04 , H04N5/355 , H04N5/378
CPC分类号： H04N5/347 , H04N5/332 , H04N5/355 , H04N5/357 , H04N5/374 , H04N5/378 , H04N9/045 , H04N2209/047
摘要： In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.
摘要翻译：在各种示例性实施例中，光敏设备包括多个像素区域。每个像素区域在衬底上包括光敏层，并且具有用于分离波段的子像素区域。像素电路包括每个子像素区域的电荷存储器和读出电路。电路被配置为从对应于相同波段的不同像素中选择多个子像素元件，以便同时读取到共享读出电路。

6. 发明授权

US09491388B2 Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode 有权
标题翻译：光检测器包括由光敏层和硅二极管形成的钉扎光电二极管
公开(公告)号：US09491388B2
公开(公告)日：2016-11-08
申请号：US14578892
申请日：2014-12-22
申请人： InVisage Technologies, Inc.
发明人： Edward Hartley Sargent , Rajsapan Jain , Igor Constantin Ivanov , Michael R. Malone , Michael Charles Brading , Hui Tian , Pierre Henri Rene Della Nave , Jess Jan Young Lee
IPC分类号： H04N3/14 , H04N5/335 , H04N5/376 , H01L27/146 , H04N5/369 , H04N5/378
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H04N5/369 , H04N5/3765 , H04N5/378
摘要： In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.
摘要翻译：在各种实施例中，光电检测器包括半导体衬底和多个像素区域。多个像素区域中的每一个在半导体衬底上包括光敏层。为多个像素区域中的每一个形成像素电路。每个像素电路包括针对多个像素区域中的每一个的钉扎光电二极管，电荷存储器和读出电路。光敏层与硅二极管的一部分电连通以形成钉扎光电二极管。与与像素区域相关联的光敏层连通的两个电极之间的电位差表现出时间依赖偏差; 第一胶片复位期间的偏压与第二积分期间的偏压不同。

7. 发明授权

US09451188B2 Dark current reduction in image sensors via dynamic electrical biasing 有权
标题翻译：通过动态电气偏置影像传感器的暗电流降低
公开(公告)号：US09451188B2
公开(公告)日：2016-09-20
申请号：US14285247
申请日：2014-05-22
申请人： InVisage Technologies, Inc.
发明人： Hui Tian , Pierre Henri Rene Della Nave
IPC分类号： H04N5/361 , H04N5/369 , H04N9/04 , H04N5/363 , H04N5/3745 , H04N5/357
CPC分类号： H04N5/378 , H04N5/2253 , H04N5/3575 , H04N5/361 , H04N5/363 , H04N5/3698 , H04N5/3745 , H04N5/3765 , H04N9/045 , H04N2209/047
摘要： In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region. The pixel circuit is configured to reset the voltage on the charge store to a reset voltage during a reset period, to integrate charge from the optically sensitive material to the charge store during an integration period, and to read out a signal from the charge store during a read out period. The pixel circuit includes a reference voltage node to be coupled to the charge store during the reset period and the read out circuit during the read out period where a reference voltage is applied to the reference voltage node and is configured to be varied during the operation of the pixel circuit.
摘要翻译：在各种实施例中，描述了使用图像传感器的图像传感器和方法。在示例性实施例中，图像传感器包括半导体衬底和多个像素区域，每个像素区域在衬底上包括光敏材料并被定位成接收光。对于每个像素区域存在偏置电极，其中偏置电极被配置为向相应像素区域的光敏材料提供偏置电压。还包括每个像素区域的像素电路，每个像素电路包括形成在半导体衬底上的电荷存储器和读出电路，电荷存储器与相应像素区域的光敏材料电连通。像素电路被配置为在复位周期期间将电荷存储器上的电压复位为复位电压，以在积分期间将来自光敏材料的电荷集成到电荷存储器，并且在电荷存储期间读出来自电荷存储器的信号读出期。像素电路包括在复位周期期间耦合到电荷存储器的参考电压节点和在读出周期期间的读出电路，其中参考电压被施加到参考电压节点，并且被配置为在操作期间变化像素电路。

8. 发明授权

US09373736B2 Quantum dot optical devices with enhanced gain and sensitivity and methods of making same 有权
公开(公告)号：US09373736B2
公开(公告)日：2016-06-21
申请号：US14730797
申请日：2015-06-04
申请人： InVisage Technologies, Inc.
发明人： Edward Hartley Sargent , Jason Paul Clifford , Gerasimos Konstantatos , Ian Howard , Ethan J. D. Klem , Larissa Levina
IPC分类号： G11C11/00 , H01L31/0352 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L51/05 , H01L51/42 , H01L21/02 , H01L27/146 , H01L27/30 , H01L51/00
CPC分类号： H01L27/305 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02521 , H01L21/02601 , H01L21/02628 , H01L27/1462 , H01L27/14634 , H01L27/14665 , H01L27/14692 , H01L27/308 , H01L31/02162 , H01L31/022466 , H01L31/0352 , H01L31/035218 , H01L31/03926 , H01L51/0038 , H01L51/0545 , H01L51/0566 , H01L51/4253 , H01L51/426 , H01L2031/0344 , Y02E10/549 , Y10S977/773 , Y10S977/774 , Y10S977/893 , Y10S977/954 , Y10S977/962
摘要： Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

9. 发明授权

US09369621B2 Devices and methods for high-resolution image and video capture 有权
标题翻译：用于高分辨率图像和视频捕获的设备和方法
公开(公告)号：US09369621B2
公开(公告)日：2016-06-14
申请号：US13099903
申请日：2011-05-03
申请人： Michael R. Malone , Pierre Henri Rene Della Nave , Michael Charles Brading , Jess Jan Young Lee , Hui Tian , Igor Constantin Ivanov , Edward Hartley Sargent
发明人： Michael R. Malone , Pierre Henri Rene Della Nave , Michael Charles Brading , Jess Jan Young Lee , Hui Tian , Igor Constantin Ivanov , Edward Hartley Sargent
IPC分类号： H04N5/225 , H04N5/232 , H04N5/3745 , H01L27/146
CPC分类号： H04N5/2258 , H01L27/14609 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H04N5/23232 , H04N5/23296 , H04N5/37452 , H04N5/378
摘要： In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.
摘要翻译：在各种示例性实施例中，提供了一种成像系统和方法。在一个实施例中，系统包括第一图像传感器阵列，第一光学系统，用于投影第一图像传感器阵列上的第一图像，第一光学系统具有第一缩放级别。第二光学系统是在第二图像传感器阵列上投影第二图像，第二光学系统具有第二缩放水平。第二图像传感器阵列和第二光学系统指向与第一图像传感器阵列和第一光学系统相同的方向。第二缩放级别大于第一缩放级别，使得投影到第二图像传感器阵列上的第二图像放大在投影在第一图像传感器阵列上的第一图像的一部分上。第一图像传感器阵列包括至少四百万像素，并且第二图像传感器阵列包括第一图像传感器阵列中的像素数量的一半或更小。

10. 发明授权

US09257582B2 Photodetectors and photovoltaics based on semiconductor nanocrystals 有权
标题翻译：基于半导体纳米晶体的光电检测器和光伏
公开(公告)号：US09257582B2
公开(公告)日：2016-02-09
申请号：US14456214
申请日：2014-08-11
申请人： InVisage Technologies, Inc.
发明人： Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
IPC分类号： H01L29/06 , H01L31/00 , H01L31/0352 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L31/0384 , H01L31/07
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
摘要翻译：描述复合材料。复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。

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