会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Isotropically-etched cavities for evanescent-mode electromagnetic-wave cavity resonators
    • 用于渐逝模式电磁波谐振腔的各向同性蚀刻腔
    • US09178256B2
    • 2015-11-03
    • US13451385
    • 2012-04-19
    • Philip Jason StephanouSang-June ParkRavindra V. Shenoy
    • Philip Jason StephanouSang-June ParkRavindra V. Shenoy
    • H01P1/207H01P7/06H01P1/208H01P11/00H01P1/202H01P7/04
    • H01P1/208H01P1/202H01P1/2084H01P7/04H01P7/06H01P11/007H01P11/008
    • This disclosure provides implementations of electromechanical systems (EMS) resonator structures, devices, apparatus, systems, and related processes. In one aspect, a device includes an evanescent-mode electromagnetic-wave cavity resonator. In some implementations, the resonator includes an isotropically-etched cavity operable to support one or more evanescent electromagnetic wave modes. In some implementations, the resonator also includes a cavity ceiling arranged to form a volume in conjunction with the isotropically-etched cavity. In some implementations, the resonator also includes a capacitive tuning structure having a portion that is located at least partially within the volume so as to support the evanescent electromagnetic wave modes. In some implementations, a distal surface of the tuning structure is separated from the closest surface to it by a gap distance, a resonant electromagnetic wave mode of the cavity resonator being dependent at least partially on the gap distance.
    • 本公开提供了机电系统(EMS)谐振器结构,设备,装置,系统和相关过程的实现。 在一个方面,一种器件包括ev逝模式电磁波谐振腔谐振器。 在一些实施方案中,谐振器包括可操作以支持一个或多个ev逝电磁波模式的各向同性蚀刻的腔。 在一些实施方案中,谐振器还包括空腔顶板,其被设置成与各向同性蚀刻的空腔结合形成体积。 在一些实施方案中,谐振器还包括电容调谐结构,其具有至少部分地位于体积内的部分,以便支持渐逝电磁波模式。 在一些实施方案中,调谐结构的远端表面与距离其最近的表面分开间隙距离,空腔谐振器的谐振电磁波模式至少部分地取决于间隙距离。
    • 9. 发明授权
    • Multi-gate thin-film transistor
    • 多栅极薄膜晶体管
    • US09105728B2
    • 2015-08-11
    • US13557039
    • 2012-07-24
    • John Hyunchul HongCheonhong KimTze-Ching Fung
    • John Hyunchul HongCheonhong KimTze-Ching Fung
    • H01L29/76H01L29/786
    • H01L29/78645H01L29/78648
    • This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load.
    • 本公开提供了多栅极晶体管,结构,器件,器件,系统和相关工艺的实现。 一方面,一种器件包括布置在衬底上的薄膜半导体层。 漏极和源极耦合到半导体层。 该器件还包括第一,第二和第三栅极,其全部布置成邻近半导体层并被配置为分别接收第一,第二和第三控制信号。 电介质层将栅极与半导体层和彼此绝缘。 在第一模式中,第一,第二和第三栅极被配置为使得电荷存储在邻近第二栅极的半导体层的区域中的势阱中。 在第二模式中,第一,第二和第三栅电极被配置为使得存储的电荷通过与第三栅电极相邻的半导体层的区域并通过源传输到负载。