会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • ORGANIC THIN FILM TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT
    • 有机薄膜晶体管和半导体集成电路
    • US20120025196A1
    • 2012-02-02
    • US13263122
    • 2010-01-18
    • Yasuo WadaToru ToyabeKen Tsutsui
    • Yasuo WadaToru ToyabeKen Tsutsui
    • H01L51/10
    • H01L51/002H01L51/0541H01L51/0545H01L51/105
    • An organic thin film transistor includes an organic semiconductor layer, a source electrode and a drain electrode which are separated from each other and are individually in contact with the organic semiconductor layer, a gate insulating film which is in contact with the organic semiconductor layer between the source and drain electrodes, and a gate electrode which is opposed to the organic semiconductor layer and is in contact with the gate insulating film. In the organic thin film transistor, a high-concentration region of the organic semiconductor layer which is located near the source electrode has an impurity concentration set higher than an impurity concentration of a low-concentration region of the organic semiconductor layer, the low-concentration region being located near the gate electrode in the thickness direction of the organic semiconductor layer between the source and drain electrodes.
    • 有机薄膜晶体管包括彼此分离并分别与有机半导体层接触的有机半导体层,源电极和漏电极,在有机半导体层之间与有机半导体层接触的栅极绝缘膜 源极和漏极以及与有机半导体层相对并与栅极绝缘膜接触的栅电极。 在有机薄膜晶体管中,位于源电极附近的有机半导体层的高浓度区域的杂质浓度设定为高于有机半导体层的低浓度区域的杂质浓度,低浓度 区域位于源极和漏极之间的有机半导体层的厚度方向上的栅电极附近。
    • 5. 发明申请
    • RADIATION THERMOMETRY AND RADIATION THERMOMETRY SYSTEM
    • 辐射热分析和辐射热分析系统
    • US20100292950A1
    • 2010-11-18
    • US12808754
    • 2008-12-11
    • Tohru IuchiKensuke Hiraka
    • Tohru IuchiKensuke Hiraka
    • G06F15/00G01K1/00
    • G01J5/0003G01J5/0007G01J5/08G01J5/0825G01J5/522
    • With proposed radiation thermometry and radiation thermometry system (10), a thin-film (2) is disposed on a substrate to make a thin-film substrate, and measurement is conducted for polarized radiance components emitted from the thin-film (2) in a direction which is within an angle range θ eic, from a planar normal line of the thin-film (2), where radiance components remain invariable. A temperature of the thin-film (2) is determined on the basis of the measured results of the polarized radiance components. The polarized radiance components are measured using a radiometer (4) by measuring p-wave polarized radiance components which are parallel to an emitting surface including a direction where the polarized radiance components are measured. A pseudo-blackbody (5) is disposed in a mirror symmetrical state to the radiometer (4), and absorbs and negates background radiations to the radiometer (4). Further, temperatures of the pseudo-blackbody (5) are measured, and will be made allowance for calculation of temperatures of the thin-film (2).
    • 利用所提出的辐射测温法和辐射测温系统(10),将薄膜(2)设置在基板上以制成薄膜基板,并且对从薄膜(2)发射的偏振辐射分量进行测量 在一个角度范围内的方向; 来自薄膜(2)的平面法线,其中辐射分量保持不变。 基于偏振辐射分量的测量结果确定薄膜(2)的温度。 通过测量平行于包括测量偏振辐射分量的方向的发射表面的p波偏振辐射分量,使用辐射计(4)测量偏振辐射分量。 伪黑体(5)以与辐射计(4)的镜对称状态设置,并且吸收和否定对辐射计(4)的背景辐射。 此外,测量伪黑体(5)的温度,并且将允许计算薄膜(2)的温度。