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1. 发明申请

US20190115717A1 Structure And Fabricating Method Of Distributed Feedback Laser 审中-公开
公开(公告)号：US20190115717A1
公开(公告)日：2019-04-18
申请号：US15922611
申请日：2018-03-15
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng Zu Wu
IPC分类号： H01S5/026 , H01S5/028 , H01S5/02 , H01S5/12
CPC分类号： H01S5/1203 , H01S5/0206 , H01S5/0268 , H01S5/028 , H01S5/0287 , H01S5/1225 , H01S5/1228 , H01S5/124 , H01S5/22
摘要： A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

2. 发明授权

US09929536B1 Structure of VCSEL and method for manufacturing the same 有权
公开(公告)号：US09929536B1
公开(公告)日：2018-03-27
申请号：US15624489
申请日：2017-06-15
申请人： TrueLight Corporation
发明人： Bing-Cheng Lin , Chih Cheng Chen , Hung-Wei Tseng
IPC分类号： H01S5/183 , H01S5/187 , H01S5/22 , H01S5/042
CPC分类号： H01S5/18344 , H01S5/0425 , H01S5/18313 , H01S5/18333 , H01S5/2063
摘要： A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.

3. 发明授权

US09854141B2 Thin optical imaging module of a biometric apparatus 有权
公开(公告)号：US09854141B2
公开(公告)日：2017-12-26
申请号：US14608484
申请日：2015-01-29
申请人： TrueLight Corporation
发明人： Chia Ching Chang Chien , Chih Cheng Chen , Zhi Kuei Huang , Jin Shan Pan
IPC分类号： H04N5/00 , H04N5/225 , G06K9/00 , G02B5/04
CPC分类号： H04N5/2254 , G02B5/045 , G06K9/00046
摘要： A thin optical imaging module of a biometric apparatus includes a first glass substrate, a first optical prism film, a second optical prism film, and an image sensor. The first glass substrate further includes a fingerprint imaging area, a vein imaging area, a contact surface, a reflective interface, and an attaching surface. The first optical prism film adhered to the attaching surface is located under the fingerprint imaging area. The second optical prism film is adhered to a position under the first optical prism film. The image sensor disposed in correspondence to the first glass substrate is located under the attaching surface.

4. 发明授权

US07625775B2 Multiple function thin-film resistor-capacitor array 有权
标题翻译：多功能薄膜电阻电容阵列
公开(公告)号：US07625775B2
公开(公告)日：2009-12-01
申请号：US11557094
申请日：2006-11-06
申请人： Daniel Liu
发明人： Daniel Liu
IPC分类号： H01L21/00
CPC分类号： H01L28/40 , H01L28/20 , H01L2224/48137 , H01L2224/49171
摘要： A multiple function thin-film resistor-capacitor array is used for an optical fiber receiving module. A dielectric thin film with desired pattern and thickness is form on surface of a silicon substrate by semiconductor manufacture process. Resistors of different resistances and capacitors of different capacitances or the combination thereof, and circuit connection therebetween can be provided by controlling the thickness and shape of thin film. The thickness of the thin-film resistor-capacitor array is adjusted by grinding to provide a substrate of a photodiode. The photodiode can be die bonded to the resistor-capacitor array with desired optical position.
摘要翻译：多功能薄膜电阻电容阵列用于光纤接收模块。通过半导体制造工艺在硅衬底的表面上形成具有所需图案和厚度的电介质薄膜。可以通过控制薄膜的厚度和形状来提供具有不同电容的不同电阻的电阻器或其组合的电容器以及它们之间的电路连接。通过研磨调整薄膜电阻器阵列的厚度以提供光电二极管的基板。光电二极管可以以期望的光学位置与键合到电阻器 - 电容器阵列。

5. 发明授权

US07364374B2 Bi-directional optical signal transmitting and receiving device 有权
标题翻译：双向光信号发射和接收装置
公开(公告)号：US07364374B2
公开(公告)日：2008-04-29
申请号：US11533849
申请日：2006-09-21
申请人： Daniel Liu
发明人： Daniel Liu
IPC分类号： G02B6/36
CPC分类号： G02B6/4246
摘要： A bi-directional transmitting and receiving device for the connection of optical fiber is mainly to apply one side of a T shape shell to connect an optical fiber, while another side of the shell in line with the optical fiber is arranged an optical transmitter, with an optical receiver being arranged at the third side of the shell, wherein the optical transmitter is a packaging structure of Transistor Outline can (TO-can) having a cup shape lid, of which underside is inclined 45 degrees to transmitted light beam, and wherein a hollow window in the underside of the lid is arranged a light splitting filter, which is just positioned at the beam path of the optical receiver.
摘要翻译：用于光纤连接的双向发送和接收装置主要是将T形外壳的一侧用于连接光纤，而与光纤一致的外壳的另一侧则配置有光发射机，光接收器布置在壳体的第三侧，其中光发射器是具有杯形盖的晶体管轮廓罐（TO-can）的封装结构，其下侧与透射光束倾斜45度，并且其中在盖的下侧的中空窗口设置有光分离过滤器，其仅位于光接收器的光束路径处。

6. 发明授权

US09245164B2 Biometric authentication device and method 有权
标题翻译：生物识别装置及方法
公开(公告)号：US09245164B2
公开(公告)日：2016-01-26
申请号：US13788959
申请日：2013-03-07
申请人： TrueLight Corporation
发明人： Jin Shan Pan , Chih Cheng Chen , Chia Ching Chang Chien
IPC分类号： G06K9/00
CPC分类号： G06K9/00073 , G06K9/00006 , G06K9/00046 , G06K9/00093 , G06K9/00892 , G06K2009/0006 , G06K2009/00932
摘要： A biometric authentication device uses IR-VCSELs as light sources for performing a better biometric authentication by providing clearer images. A light guide module is introduced to minimize the size of the device. Moreover, the biometric authentication device uses a single image sensing module to gather the vein image and the fingerprint image into the same detection signal which is then analyzed and compared with the pre-stored vein feature data and fingerprint feature data. Therefore, the biometric authentication device can achieve an approach in lowering hardware costs, simplifying circuit designs and providing an outstanding performance.
摘要翻译：生物认证设备使用IR-VCSEL作为光源，通过提供更清晰的图像来执行更好的生物认证。引入导光模块以最小化装置的尺寸。此外，生物认证装置使用单个图像感测模块将静脉图像和指纹图像收集到相同的检测信号中，然后将其与预先存储的静脉特征数据和指纹特征数据进行分析比较。因此，生物认证设备可以实现降低硬件成本，简化电路设计并提供卓越性能的方法。

7. 发明授权

US08786074B2 Packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity 有权
标题翻译：用于矩阵阵列的高功率和高方向性的半导体发光元件的封装装置
公开(公告)号：US08786074B2
公开(公告)日：2014-07-22
申请号：US13658006
申请日：2012-10-23
申请人： TrueLight Corporation
发明人： Cheng Ju Wu , Hung-Che Chen , I Han Wu , Shang-Cheng Liu , Jin Shan Pan
IPC分类号： H01L23/12
CPC分类号： H01L33/486 , H01L27/156 , H01L33/64 , H01L2224/45144 , H01L2224/48247 , H01L2224/49111 , H01L2924/19107 , H01S5/02216 , H01S5/423 , H01L2924/00
摘要： A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.
摘要翻译：用于矩阵排列的高功率和高方向性的半导体发光元件的封装装置包括金属基底，阵列芯片和多个金属线。金属基底是高度导热的铜或铝，并且电绝缘的第一电极区域和至少一个第二电极区域设置在金属基底上。阵列芯片设置在第一电极区域上，多个矩阵排列的半导体发光元件和与发光元件相邻的至少一个引线接合焊盘设置在该第一电极区域上。发光元件是VCSEL元件，HCSEL元件或RCLED元件。金属线连接在引线接合焊盘和第二电极区之间以传输功率信号。在底表面和第一电极区域之间设置导电粘合剂以结合并促进两者之间的电连接。

8. 发明授权

US08324722B2 Packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity 有权
标题翻译：用于矩阵阵列的高功率和高方向性的半导体发光元件的封装装置
公开(公告)号：US08324722B2
公开(公告)日：2012-12-04
申请号：US12657161
申请日：2010-01-14
申请人： Cheng Ju Wu , Hung-Che Chen , I Han Wu , Shang-Cheng Liu , Jin Shan Pan
发明人： Cheng Ju Wu , Hung-Che Chen , I Han Wu , Shang-Cheng Liu , Jin Shan Pan
IPC分类号： H01L23/12
CPC分类号： H01L33/486 , H01L27/156 , H01L33/64 , H01L2224/45144 , H01L2224/48247 , H01L2224/49111 , H01L2924/19107 , H01S5/02216 , H01S5/423 , H01L2924/00
摘要： A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.
摘要翻译：用于矩阵排列的高功率和高方向性的半导体发光元件的封装装置包括金属基底，阵列芯片和多个金属线。金属基底是高度导热的铜或铝，并且电绝缘的第一电极区域和至少一个第二电极区域设置在金属基底上。阵列芯片设置在第一电极区域上，多个矩阵排列的半导体发光元件和与发光元件相邻的至少一个引线接合焊盘设置在该第一电极区域上。发光元件是VCSEL元件，HCSEL元件或RCLED元件。金属线连接在引线接合焊盘和第二电极区之间以传输功率信号。在底表面和第一电极区域之间设置导电粘合剂以结合并促进两者之间的电连接。

9. 发明授权

US08121167B2 Dual wavelength laser device for optical communication 有权
标题翻译：双波长激光器件用于光通信
公开(公告)号：US08121167B2
公开(公告)日：2012-02-21
申请号：US12436324
申请日：2009-05-06
申请人： Jin-Shan Pan , Shang-Cheng Liu , Cheng-Ju Wu , Chang-Cherng Wu
发明人： Jin-Shan Pan , Shang-Cheng Liu , Cheng-Ju Wu , Chang-Cherng Wu
IPC分类号： H01S5/00
CPC分类号： H01S5/02288 , H01S5/02212 , H01S5/02252 , H01S5/4087
摘要： A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.
摘要翻译：一种双波长激光装置，包括盖，头，第一激光芯片和第二激光芯片。盖包括盖体和埋在盖体上的透镜。头部与帽盖形成容纳空间。第一激光芯片布置在容纳空间中并朝向透镜发射第一激光束。第二激光芯片布置在容纳空间中并朝向透镜发射第二激光束。

10. 发明授权

US10522974B2 Edge-emitting laser having small vertical emitting angle 有权
公开(公告)号：US10522974B2
公开(公告)日：2019-12-31
申请号：US15994971
申请日：2018-05-31
申请人： TRUELIGHT CORPORATION
发明人： Chien Hung Pan , Cheng-Ju Wu
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343
摘要： An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding to layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

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