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1. 发明申请

US20180091747A1 EVENT TRACKING IMAGER 审中-公开
公开(公告)号：US20180091747A1
公开(公告)日：2018-03-29
申请号：US14609098
申请日：2015-01-29
申请人： Voxtel, inc.
发明人： Jehyuk Rhee , Adam Lee , George Williams
IPC分类号： H04N5/343 , G01S7/486 , G01S17/02 , G01S17/10 , G01S17/89 , H04N5/33 , H04N5/225
CPC分类号： G01S7/4865 , G01S3/784 , G01S7/4804 , G01S7/4863 , G01S17/023 , G01S17/10 , G01S17/89 , H04N5/374 , H04N17/002
摘要： An imaging device is disclosed, the device comprising a pixelated array of semiconductor detector elements, in which each detecting element is electrically connected to an integrated circuit, the integrated circuit comprising a passive signal path and an active signal path. The active path provides consecutive frame imaging and the active path detects the location of transient events. The device further comprising a readout decoder block, the readout decoder block controlling operation of the passive paths. Additionally the device comprises of an address arbitration control block, the address arbitration control block controlling operation of the active paths, wherein the address arbitration control block readout of the active paths is independent of readout of the passive paths.

2. 发明授权

US09847441B2 Doped multiplier avalanche photodiode 有权
公开(公告)号：US09847441B2
公开(公告)日：2017-12-19
申请号：US14813475
申请日：2015-07-30
申请人： Voxtel, Inc.
发明人： Andrew Huntington
IPC分类号： H01L31/107 , H01L27/146
CPC分类号： H01L31/1075 , H01L27/14643 , H01L27/14689
摘要： An epitaxial grown avalanche photodiode (APD), the avalanche photodiode comprising an anode, a cathode, an absorber, and a doped multiplier. The absorber and the doped multiplier are about between the cathode and the anode. The doped multiplier has a multiplier dopant concentration. The doped multiplier substantially depleted during operation of the epitaxial grown photodiode. The doped multiplier may comprise of a plurality of multiplication regions, each of the multiplication regions substantially depleted during operation of the avalanche photodiode.

3. 发明授权

US09843157B2 Solid state laser system 有权
公开(公告)号：US09843157B2
公开(公告)日：2017-12-12
申请号：US15153664
申请日：2016-05-12
申请人： Voxtel, Inc.
发明人： George Williams
IPC分类号： H01S3/11 , H01S3/16 , H01S3/0933 , H01S3/0941 , H01S3/094 , H01S3/131 , H01S3/06 , H01S3/042 , H01S3/04 , H01S3/08 , H01S3/113 , H01S3/13 , H01S3/02
CPC分类号： H01S3/1666 , H01S3/025 , H01S3/0405 , H01S3/042 , H01S3/0604 , H01S3/0617 , H01S3/08054 , H01S3/0933 , H01S3/094038 , H01S3/0941 , H01S3/09415 , H01S3/11 , H01S3/113 , H01S3/1305 , H01S3/1312 , H01S3/1608 , H01S3/1618 , H01S3/1631 , H01S3/1698
摘要： A laser system comprising an RE:XAB gain medium within a resonator cavity. X is selected from Ca, Lu, Yb, Nd, Sm, Eu, Gd, Ga, Tb, Dy, Ho, Er, and RE is selected from Lu, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Pr, Tm, Cr, Ho. The system further comprises a pumping source having optical output directed towards the gain medium. A laser controller operates the pumping source. The system further comprises a heat spreader, the heat spreader in thermal communication with the gain medium through a surface wherein the pump source has optical output incident.

4. 发明授权

US09693035B2 Reconfigurable asynchronous readout array 有权
公开(公告)号：US09693035B2
公开(公告)日：2017-06-27
申请号：US15376639
申请日：2016-12-12
申请人： Voxtel, Inc.
发明人： George Williams , Adam Lee
IPC分类号： H04N5/374 , H04N13/02 , H04N13/00
CPC分类号： H04N13/204 , H04N5/33 , H04N5/3742 , H04N5/3745 , H04N5/378 , H04N13/156
摘要： A 3D stacked electro-optical radiation imaging device with a plurality of integrated circuit layers, the device having a pixelated array of semiconductor detector elements, in which each detecting element is electrically connected a stacked integrated circuit. The stacked integrated circuit has a mixed signal layer and a reconfigurable layer. The mixed signal layer has a passive signal path and an active signal path. A readout decoder block controls operation of the passive paths. The active signal path triggers readout upon transient event detection and is readout by an address arbitration control block, the address arbitration control block operating independent and asynchronous to the readout of the passive path and transient event detection initiates the identification of the location of and readout of the signaling active path. The reconfigurable layer has processing units that each correspond to one or more pixels in the pixelated array. The processing units are reconfigurable through received signals from either the passive path, the active path, or an external signal. A controller programs and communicates with the mixed signal layer and reconfigurable layer

5. 发明授权

US09591238B2 Asynchronous readout array 有权
标题翻译：异步读出阵列
公开(公告)号：US09591238B2
公开(公告)日：2017-03-07
申请号：US14526340
申请日：2014-10-28
申请人： Voxtel, Inc.
发明人： Adam Lee , Jehyuk Rhee , Brent Jensen , George Williams
IPC分类号： H04N5/33 , H04N5/374 , H04N5/3745 , H04N5/378
CPC分类号： H04N5/33 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： An imaging device is disclosed, the device comprising a pixelated array of semiconductor elements, in which each detecting element is electrically connected to an integrated circuit, the integrated circuit comprising a passive signal path and an active signal path. The passive path provides consecutive frame imaging and the active path detects the location of transient events. The device further comprising a readout decoder block, the readout decoder block controlling operation of the passive paths. Additionally, the device comprises of an address arbitration control block, the address arbitration control block controlling operation of the active paths, wherein the address arbitration control block readout of the active paths are independent of readout of the integrated signal readout from the passive paths.
摘要翻译：公开了一种成像装置，该装置包括半导体元件的像素化阵列，其中每个检测元件电连接到集成电路，该集成电路包括无源信号路径和有源信号路径。被动路径提供连续帧成像，主动路径检测瞬态事件的位置。所述设备还包括读出解码器块，读出解码器块控制被动路径的操作。此外，该设备包括地址仲裁控制块，地址仲裁控制块控制有效路径的操作，其中有效路径的地址仲裁控制块读出与从被动路径读出的积分信号的读出无关。

6. 发明授权

US08724214B2 Broadband optical upconversion by energy transfer from dye antenna to upconverting crystal 有权
标题翻译：通过从染料天线到上变频晶体的能量转移的宽带光学上变频
公开(公告)号：US08724214B2
公开(公告)日：2014-05-13
申请号：US13607408
申请日：2012-09-07
申请人： David M. Schut , Charles G. Dupuy , George M. Williams , Thomas L. Allen
发明人： David M. Schut , Charles G. Dupuy , George M. Williams , Thomas L. Allen
IPC分类号： G02F1/35 , C09K11/02
CPC分类号： G02F1/3526 , B82Y20/00
摘要： An optical upconverting nanomaterial includes a nanocrystal, a ligand layer directly bonded to the nanocrystal, and an optical antenna directly or indirectly bonded to the nanocrystal. The nanocrystal includes a transition metal-doped material exhibiting upconversion to optical wavelengths. The transition metal-doped material includes energy transfer facilitating transition metal dopants and (not necessarily distinct) emitter transition metal dopants, where an absorption spectrum of the energy transfer facilitating transition metal dopants overlaps with an emission spectrum of the optical antenna. The optical upconverting nanomaterial has at least one linear dimension (e.g., width or thickness) that is less than 150 nm in extent.
摘要翻译：光学上变频纳米材料包括纳米晶体，直接结合到纳米晶体的配体层，以及直接或间接地结合到纳米晶体的光学天线。纳米晶体包括过渡金属掺杂材料，其表现出对光波长的上转换。过渡金属掺杂材料包括能量转移促进过渡金属掺杂剂和（不一定是不同的）发射极过渡金属掺杂剂，其中促进过渡金属掺杂剂的能量转移的吸收光谱与光学天线的发射光谱重叠。光学上变频纳米材料具有至少一个范围小于150nm的线性尺寸（例如，宽度或厚度）。

7. 发明授权

US08319307B1 Active pixel sensors with variable threshold reset 有权
标题翻译：有源像素传感器具有可变阈值复位
公开(公告)号：US08319307B1
公开(公告)日：2012-11-27
申请号：US11282142
申请日：2005-11-18
申请人： George Melville Williams
发明人： George Melville Williams
IPC分类号： H01L31/06
CPC分类号： H01L27/14612 , H01L27/14636
摘要： A CMOS image sensor array has rows and columns of active pixels, and column lines in communication with the active pixels in the respective columns. Each active pixel has an output connected to a column line and includes a photodetector that produces a signal proportional to incident light intensity that is coupled to an active pixel output based on column select and row select signals. Each active pixel has a reset transistor for resetting the active pixel, wherein each reset transistor has a first gate terminal and a second gate terminal. The reset transistors have a variable threshold capability that allows increased sensor array dynamic range or mitigation of the effects of temperature or radiation induced transistor threshold voltage shifts. Row select, column select, and sense transistors can also be configured to have variable thresholds.
摘要翻译： CMOS图像传感器阵列具有有源像素的行和列，以及与相应列中的有源像素通信的列线。每个有源像素具有连接到列线的输出，并且包括光电检测器，其产生与入射光强度成比例的信号，其基于列选择信号和行选择信号耦合到有源像素输出。每个有源像素具有用于复位有源像素的复位晶体管，其中每个复位晶体管具有第一栅极端子和第二栅极端子。复位晶体管具有可变阈值能力，其允许增加传感器阵列动态范围或减轻温度或辐射诱发晶体管阈值电压偏移的影响。行选择，列选择和检测晶体管也可以配置为具有可变阈值。

8. 发明授权

US07919018B2 Photoactive taggant materials comprising semiconductor nanoparticles and lanthanide ions 有权
标题翻译：包含半导体纳米颗粒和镧系元素离子的光敏标签物质
公开(公告)号：US07919018B2
公开(公告)日：2011-04-05
申请号：US12290643
申请日：2008-10-30
申请人： George M. Williams , David M. Schut
发明人： George M. Williams , David M. Schut
IPC分类号： F21V9/04 , F21V9/06 , G02B5/22 , G02B5/26 , F21V9/00 , G02B5/02 , G02C7/10 , G02F1/361 , G03B11/00
CPC分类号： C09D11/322 , C09D11/38
摘要： This invention provides, in one aspect, a procedure to use optically transparent nanocrystalline quantum dots to absorb UV light. This absorption process leads to an energy transfer to a chemically bound and chelated lanthanide ion that may emit light in either the visible spectrum (400-700 nm) or in the near infrared (700-1600 nm). This invention also provides methods for the use of these taggant materials in inks and aerosols used to disperse the taggant.
摘要翻译：本发明在一个方面提供使用光学透明的纳米晶体量子点吸收紫外光的方法。这种吸收过程导致能够转移到可发射可见光谱（400-700nm）或近红外（700-1600nm）的光的化学结合和螯合的镧系元素离子。本发明还提供了在用于分散标签剂的油墨和气溶胶中使用这些标记剂材料的方法。

9. 发明申请

US20170328768A1 Avalanche Photodiode Receiver 审中-公开
公开(公告)号：US20170328768A1
公开(公告)日：2017-11-16
申请号：US15658302
申请日：2017-07-24
申请人： Voxtel, Inc.
发明人： George WILLIAMS
IPC分类号： G01J1/44 , H01L31/107
CPC分类号： G01J1/44 , G01J1/46 , G01J2001/446 , G01J2001/4466 , H01L31/02027 , H01L31/107 , H01L31/1075 , H03F3/087 , H03F2200/129
摘要： A method of detecting an optical signal, comprising the steps of: providing an avalanche photodiode (APD) comprising a multiplication region capable of amplifying an electric current, said multiplication region, in operation, having a first ionization rate for electrons and a second ionization rate for holes, wherein said first ionization rate is different in magnitude from said second ionization rate, and exposure to the optical signal causes an impulse response; exposing the APD to a modulating optical signal; providing an external circuit that induces an APD bias to the multiplication region; providing an external circuit for amplifying and processing an electric signal from the avalanche photodiode; and modulating the APD bias in a manner that is correlated with the optical signal.

10. 发明申请

US20170085819A1 HIGH DYNAMIC RANGE IMAGE SENSOR 审中-公开
公开(公告)号：US20170085819A1
公开(公告)日：2017-03-23
申请号：US14609295
申请日：2015-01-29
申请人： Voxtel, inc.
发明人： Adam Lee , George Williams , Jehyuk Rhee
IPC分类号： H04N5/378 , H04N5/33 , H04N5/3745 , H04N5/374
CPC分类号： H04N5/378 , H04N5/3745 , H04N5/37455
摘要： An imaging device in accordance with the present disclosure comprises of a pixelated array of semiconductor detector elements, each of the pixels in the array having an in-pixel integrated circuit, the integrated circuit having a comparator, a readout decoder block, and an address arbitration control block. The readout decoder block reads out the integrated signals of the pixels. The address arbitration control block determines the pixel address of the pixels charging beyond a threshold voltage, the threshold exceedance determined by the comparator. The addressed pixels are provided a timestamp for each of the pixels integrating beyond the threshold voltage, the timestamp provided by an off-pixel time-to-digital converter (TDC), the value of the timestamp corresponding with the accumulated charge of the pixel.

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