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1. 发明授权

US11611195B2 Fabrication of low-cost long wavelength VCSEL with optical confinement control 有权
公开(公告)号：US11611195B2
公开(公告)日：2023-03-21
申请号：US17138623
申请日：2020-12-30
申请人： Mellanox Technologies, Ltd.
发明人： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa
IPC分类号： H01S5/00 , H01S5/183 , H01S5/042 , H01S5/343 , H01S5/125 , H01S5/20 , H01S5/30
摘要： Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

2. 发明申请

US20220407291A1 Radiation Mode Tailored Semiconductor Laser 有权
公开(公告)号：US20220407291A1
公开(公告)日：2022-12-22
申请号：US17807131
申请日：2022-06-15
申请人： Ronald LaComb
发明人： Ronald LaComb
IPC分类号： H01S5/10 , H01S5/028 , H01S5/125 , H01S5/22 , H01S5/026
摘要： The present disclosure relates to index guided semiconductor laser devices supporting wide single lateral mode operation for high power operation. A narrow channel ridge waveguide structure is presented which devices can be configured as single lateral multi-spectral high power semiconductor lasers, single frequency lasers, gain chips and semiconductor amplifiers. More specifically it relates to a means for increasing the lateral mode size over that of conventional index guided structures to increase the average output power typically limed by Catastrophic Optical Damage (COD) at the laser facet or by intensity related effects. This potentially allows the overall laser cavity length to be shortened for a given output power level to stabilize frequency locking with internal or external gratings to improve single frequency operation.

3. 发明申请

US20220393431A1 MONOLITHIC MICRO-PILLAR PHOTONIC CAVITIES BASED ON III-NITRIDE SEMICONDUCTORS 有权
公开(公告)号：US20220393431A1
公开(公告)日：2022-12-08
申请号：US17832769
申请日：2022-06-06
申请人： U.S. Army DEVCOM Army Research Laboratory
发明人： Michael D. Gerhold , Alexander Franke , Zlatko Sitar , Ramon Collazo , Ronny Kirste , Dorian Alden
IPC分类号： H01S5/125 , C30B25/04 , C30B25/18 , C30B29/40 , C30B33/10
摘要： A method of making a Group III nitride material that includes: providing a substrate; patterning a template on the substrate; depositing a layer of a material comprising aluminum, gallium and nitrogen on the substrate at a temperature; annealing the layer comprising aluminum, gallium and nitrogen; epitaxially growing Distributed Bragg Reflectors to form a structure on the substrate that comprises microcavities; and etching micropillars in the structure for at least 30 seconds with a heated basic solution is described.

4. 发明申请

US20220393427A1 DFB+R LASER STRUCTURE FOR DIRECTLY MODULATED LASER 有权
公开(公告)号：US20220393427A1
公开(公告)日：2022-12-08
申请号：US17804448
申请日：2022-05-27
申请人： II-VI Delaware, Inc.
发明人： Yasuhiro Matsui
IPC分类号： H01S5/042 , H01S5/125 , H01S5/0683 , H01S5/028
摘要： A controller stabilizes a distributed feedback plus reflection (DFB+R) laser, which has a back facet, a DFB section, a passive section, and a front facet with a low reflective element. An etalon filter is formed by a portion of the DFB section, the passive section, and the low reflective element. Control circuitry directly modulates the DFB section with a modulation signal and biases the passive section with a bias signal. In operation, a lasing mode of the DFB section is aligned to a long wavelength edge of one of the periodic peaks of a reflection profile of the etalon filter. Meanwhile, photodiodes are arranged to monitor the output power emitted from the laser's front and back facets. The control circuitry monitors a ratio of the detected output power and adjusts the bias based on the monitored ratio.

5. 发明申请

US20220285919A1 EDGE-EMITTING SEMICONDUCTOR LASER AND METHOD FOR PRODUCING AN EDGE-EMITTING SEMICONDUCTOR LASER 有权
公开(公告)号：US20220285919A1
公开(公告)日：2022-09-08
申请号：US17637223
申请日：2020-08-18
申请人： OSRAM Opto Semiconductors GmbH
发明人： Martin Mueller
IPC分类号： H01S5/40 , H01S5/125
摘要： The invention relates to an edge-emitting semiconductor laser comprising —at least two laser diodes, each of which is designed to generate electromagnetic radiation, wherein —the laser diodes are arranged on top of one another in a vertical direction, —the laser diodes are monolithically connected to one another, and —at least one frequency-stabilizing element is arranged in an end region of the laser diodes. The invention also relates to a method for producing an edge-emitting semiconductor laser.

6. 发明申请

US20220263290A1 NARROW LINEWIDTH SEMICONDUCTOR LASER DEVICE 有权
公开(公告)号：US20220263290A1
公开(公告)日：2022-08-18
申请号：US17665566
申请日：2022-02-06
申请人： Georgios Margaritis
发明人： Georgios Margaritis
IPC分类号： H01S5/14 , H01S5/125
摘要： A novel narrow linewidth laser device is disclosed that includes a gain element, such as a quantum well, quantum dot or bulk waveguide laser chip and a fiber Bragg grating formed in an optical fiber positioned to receive the output from a first end of the gain element and return a portion of said output back into the gain element. The fiber Bragg grating is constructed so that its power reflectivity profile has a ratio of reflectivity slope over reflectivity at the 3 dB point below the reflectivity peak on the red side (longer wavelength side) of the grating larger than a value of 2/nm. The operating wavelength of the device may be tuned thermally, electrically, or thermo-electrically to be on the red side of the fiber Bragg grating reflectivity profile, preferably, but not necessarily, at the 3 dB point below the reflectivity peak or lower. In another embodiment, a second grating is optically coupled to a second end of the gain element and has a reflectivity profile that overlaps at least a portion of the reflectivity profile of the front end fiber Bragg grating.

7. 发明申请

US20220255291A1 LASER DIODE AND MANUFACTURING METHOD OF THE SAME 有权
公开(公告)号：US20220255291A1
公开(公告)日：2022-08-11
申请号：US17561212
申请日：2021-12-23
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Su Hwan OH , Oh Kee KWON , Chul-Wook LEE , Kisoo KIM
IPC分类号： H01S5/026 , H01S5/125
摘要： Provided is a laser diode and a method for manufacturing the same. The diode includes a substrate including a DBR region having a channel hole, an active region, and a phase shift region, an optical waveguide provided on the substrate and extending from the active region to the DBR region, a lower insulation layer disposed on the optical waveguide, upper electrodes disposed on the lower insulation layer, and a heat blocking layer disposed in the channel hole of the DBR region and thermally separating the optical waveguide from the substrate.

8. 发明申请

US20220158412A1 SEMICONDUCTOR OPTICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20220158412A1
公开(公告)日：2022-05-19
申请号：US17493393
申请日：2021-10-04
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takuo HIRATANI , Hideki YAGI , Naoki FUJIWARA
IPC分类号： H01S5/125 , H01S5/10 , H01S5/12
摘要： A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.

9. 发明授权

US11329454B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US11329454B2
公开(公告)日：2022-05-10
申请号：US16963201
申请日：2018-03-26
申请人： Mitsubishi Electric Corporation
发明人： Hiroyuki Kawahara
IPC分类号： H01S5/02 , H01S5/227 , H01S5/125 , H01S5/323 , H01S5/026 , H01S5/12
摘要： What is provided here are: a step of forming a first semiconductor layer on a base member; a step of forming a mask on the first semiconductor layer; a step of etching the first semiconductor layer by using the mask, to thereby form a semiconductor structure; a step of forming a second semiconductor layer in a region abutting on a side surface of the semiconductor structure, said second semiconductor layer having a convex portion abutting to the mask; a convex-portion removing step of removing the convex portion by supplying an etching gas thereto; and a regrown-layer forming step of supplying a material gas onto the semiconductor structure and the second semiconductor layer, to thereby form a regrown layer; wherein the convex-portion removing step and the regrown-layer forming step are executed in a same manufacturing apparatus.

10. 发明申请

US20220123526A1 SEMICONDUCTOR LASERS WITH IMPROVED FREQUENCY MODULATION RESPONSE 有权
公开(公告)号：US20220123526A1
公开(公告)日：2022-04-21
申请号：US17384135
申请日：2021-07-23
申请人： TeraXion Inc.
发明人： Sylvain BOUDREAU , Keven BÉDARD , Michel MORIN , François COSTIN , André BABIN , Simon AYOTTE
IPC分类号： H01S5/32 , H01S5/125 , H01S5/065
摘要： A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.

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