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1. 发明申请

US20230126070A1 DRIVER CIRCUIT FOR A LOW INDUCTIVE POWER MODULE AND A LOW INDUCTIVE POWER MODULE WITH ENHANCED SHORT CIRCUIT WITHSTAND CAPABILITY 有权
公开(公告)号：US20230126070A1
公开(公告)日：2023-04-27
申请号：US17908635
申请日：2021-03-04
申请人： Robert Bosch GmbH
发明人： Karl Oberdieck , Christian Maier , Sebastian Strache
IPC分类号： H03K17/082 , H03K3/012
摘要： A driver circuit for a low-inductance power module that has a connection and an output. The connection is connectable to the source contact of a power transistor and the output is connectable to the gate contact of the power transistor. The driver circuit is configured to produce, in a first operating mode, a first gate-source voltage for the gate contact of the power transistor and to provide the first gate-source voltage at the output of the driver circuit. The driver circuit is also configured to produce, in a second operating mode, during at least one preset minimum time span, a lower second gate-source voltage for the gate contact of the power transistor and to provide the second gate-source voltage at the output of the driver circuit.

2. 发明授权

US11637423B2 Overcurrent protection by depletion mode MOSFET or JFET and bi-metallic temperature sensing switch in mini circuit breaker 有权
公开(公告)号：US11637423B2
公开(公告)日：2023-04-25
申请号：US17237500
申请日：2021-04-22
申请人： Littelfuse, Inc.
发明人： Chuan Fang Chin , Teddy To
IPC分类号： H02H3/08 , H02H3/02 , H01L27/02 , H02H9/00 , H03K17/082 , H03K17/16
摘要： A miniature circuit breaker for providing short circuit and overload protection is disclosed herein. The miniature circuit breaker features a field effect transistor (FET), which may be a depletion mode metal oxide semiconductor FET (D MOSFET), a junction field-effect transistor (JFET), or a silicon carbide JFET, the FET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

3. 发明授权

US11632043B2 Circuit device 有权
公开(公告)号：US11632043B2
公开(公告)日：2023-04-18
申请号：US17706853
申请日：2022-03-29
申请人： Seiko Epson Corporation
发明人： Katsumi Inoue , Yusuke Sano , Motoaki Nishimura
IPC分类号： H02M3/07 , H02H3/20 , H02M1/32 , H03K17/082
摘要： A circuit device includes a regulator, a charge pump circuit, an overvoltage detection circuit, and a control circuit. The regulator regulates a power supply voltage. The charge pump circuit outputs, a gate control voltage, to a gate node of an N-type transistor provided between a power supply node and a load, based on a regulated voltage. The overvoltage detection circuit detects an overvoltage of the regulated voltage. The control circuit controls to stop the charge pump circuit when the overvoltage is detected by the overvoltage detection circuit.

4. 发明授权

US11626870B1 Gate driver 有权
公开(公告)号：US11626870B1
公开(公告)日：2023-04-11
申请号：US17573490
申请日：2022-01-11
申请人： Infineon Technologies Austria AG
发明人： Mi Ran Baek , Junbae Lee
IPC分类号： H03K17/082
摘要： A circuit comprises a gate driver having a supply voltage terminal and configured to generate an output at an output terminal based on an input. A voltage multiplexer is configured to connect a first voltage terminal to the supply voltage terminal responsive to a voltage select signal having a first value and connect a second voltage terminal to the supply voltage terminal responsive to the voltage select signal having a second value. First logic is configured to generate a fault signal responsive to detecting one of a first fault condition associated with operation of the gate driver or a second fault condition associated with operation of the gate driver and generate the voltage select signal having the second value based on the fault signal. Second logic is configured to generate the voltage select signal having the second value after a predetermined delay period based on a value of the input.

5. 发明申请

US20230081401A1 POST DRIVER AND CHIP WITH OVERDRIVE CAPABILITY 有权
公开(公告)号：US20230081401A1
公开(公告)日：2023-03-16
申请号：US17811912
申请日：2022-07-12
申请人： MEDIATEK INC.
发明人： Federico Agustin ALTOLAGUIRRE , Hsin-Cheng HSU
IPC分类号： H03K17/082
摘要： A post driver and a chip with overdrive capability are shown. A first bias circuit is configured to provide a first voltage shift between the output terminal of the post driver and the gate terminal of the first p-channel metal-oxide-semiconductor (PMOS) transistor of a pull-up circuit when the pull-down circuit is enabled. A second bias circuit is configured to provide a second voltage shift between the output terminal of the post driver and the gate terminal of the first n-channel metal-oxide-semiconductor (NMOS) transistor of the pull-down circuit when the pull-up circuit is enabled. Accordingly, the PMOS transistors in the pull-up circuit and the NMOS transistors in the pull-down circuit are all well protected although they are powered by an overdrive voltage.

6. 发明授权

US11581887B2 Overcurrent protection circuit 有权
公开(公告)号：US11581887B2
公开(公告)日：2023-02-14
申请号：US17197312
申请日：2021-03-10
申请人： ROHM Co., LTD.
发明人： Toru Takuma
IPC分类号： H03K17/082 , H02H9/02 , B60R16/02
摘要： Disclosed herein is an overcurrent protection circuit configured to, upon detection of an output current that flows through a switch element reaching a first overcurrent limit value, reduce an overcurrent limit value for the output current from the first overcurrent limit value to a second overcurrent limit value smaller than the first overcurrent limit value.

7. 发明授权

US11575370B2 Power transistor detection with self-protection 有权
公开(公告)号：US11575370B2
公开(公告)日：2023-02-07
申请号：US17749419
申请日：2022-05-20
申请人： Skyworks Solutions, Inc.
发明人： András V. Horváth , Carlos Briseno-Vidrios , Viktor Zsolczai , Soma Ur
IPC分类号： H03K17/082 , H04L12/10 , G06F1/26
摘要： A method for establishing a powered link over a transmission line includes providing a constant, predetermined current to a terminal thereby causing a power transistor coupled to the terminal to conduct in a subthreshold region of transistor operation without current flowing between a drain terminal of the power transistor and a source terminal of the power transistor. The method includes estimating a size of the power transistor using a digital time signal indicative of an amount of time the constant, predetermined current is provided before a voltage level on the terminal exceeds a predetermined voltage level. In an embodiment, the predetermined voltage level is less than a threshold voltage of the power transistor.

8. 发明授权

US11555847B2 Semiconductor integrated circuit device 有权
公开(公告)号：US11555847B2
公开(公告)日：2023-01-17
申请号：US17121967
申请日：2020-12-15
申请人： ROHM Co., LTD.
发明人： Kiminobu Sato
IPC分类号： G01R31/28 , H01L27/02 , H03K17/082
摘要： A semiconductor integrated circuit device includes a control unit configured to control a switching element or an output transistor of a power supply device, a monitor terminal for monitoring an output voltage of the power supply device, a test unit configured to output a test signal to the monitor terminal before activation of the power supply device, and a determination unit configured to determine whether or not the monitor terminal is open, on the basis of a voltage of the monitor terminal when the test unit outputs the test signal to the monitor terminal.

9. 发明授权

US11552631B2 Voltage comparator 有权
公开(公告)号：US11552631B2
公开(公告)日：2023-01-10
申请号：US17395601
申请日：2021-08-06
申请人： FLEXTRONICS AP, LLC
发明人： Antony E. Brinlee
IPC分类号： H03K5/22 , H03K3/037 , H02M1/32 , H02M3/158 , H03K17/16 , H02M3/335 , H03K17/082 , H03K3/012 , H03K17/687 , H03K3/0233 , H03K17/14 , H03K17/18 , H03K17/691
摘要： A circuit arrangement is disclosed for controlling the switching of a field effect transistor (FET). A current controlled amplifier may be configured to amplify a current in a current sense device to generate an amplified current, wherein the current in the current sense device indicates a current through the FET. A comparator may be coupled to the current sense amplifier to compare a voltage corresponding to the amplified current with a voltage reference and to generate a comparator output based on the comparison, wherein the comparator output controls whether the FET is on or off.

10. 发明授权

US11549971B2 Managing power disruptions in a sensor network 有权
公开(公告)号：US11549971B2
公开(公告)日：2023-01-10
申请号：US17176963
申请日：2021-02-16
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Miroslav Stepan , Marek Hustava , Tomas Suchy , Pavel Hartl , Petr Kamenicky
IPC分类号： G06F1/3212 , G06F1/3234 , G06F1/3287 , G01R19/00 , H03K5/08 , H03K17/082 , G06F1/3215
摘要： A sensor device coupled to a communication interface bus, the sensor device enters a low power mode in which some operations of the sensor device are suspended when the sensor device receives insufficient power over the bus, thereby significantly reducing the likelihood that digital components of the sensor device will need to be reset due to an under-voltage condition.

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