专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11640972B2 Process for fabricating a high-voltage capacitive element, and corresponding integrated circuit 有权
公开(公告)号：US11640972B2
公开(公告)日：2023-05-02
申请号：US17591233
申请日：2022-02-02
申请人： STMicroelectronics (Rousset) SAS
发明人： Abderrezak Marzaki
IPC分类号： H01L21/00 , H01L49/02 , H01L27/11521 , H01L27/11531 , H01L29/423 , H01L29/66 , H01L29/788
摘要： A semiconductor substrate has a front face with a first dielectric region. A capacitive element includes, on a surface of the first dielectric region at the front face, a stack of layers which include a first conductive region, a second conductive region and a third conductive region. The second conductive region is electrically insulated from the first conductive region by a second dielectric region. The second conductive region is further electrically insulated from the third conductive region by a third dielectric region. The first and third conductive regions form one plate of the capacitive element, and the second conductive region forms another plate of the capacitive element.

2. 发明授权

US11637077B2 Semiconductor device 有权
公开(公告)号：US11637077B2
公开(公告)日：2023-04-25
申请号：US17218230
申请日：2021-03-31
申请人： Samsung Electronics Co., Ltd.
发明人： Changbum Kim , Sunghoon Kim , Daeseok Byeon
IPC分类号： H01L21/00 , H01L23/60 , H01L23/528 , H01L27/092
摘要： A semiconductor device includes a gate line extending in a first direction, parallel to an upper surface of a semiconductor substrate; a first active region including a first channel region disposed below the gate line and including a first conductivity-type impurity; a second active region disposed to be separated from the first active region in the first direction, including a second channel region disposed below the gate line, and including the first conductivity-type impurity; and a plurality of metal wirings disposed at a first height level above the semiconductor substrate, wherein at least one metal wiring, among the plurality of metal wirings, is directly electrically connected to the first active region, no metal wirings at the first height level are electrically connected to the second active region, and at least one metal wiring, among the plurality of metal wirings, is connected to receive a signal applied to the gate line.

3. 发明授权

US11634812B2 Solid source sublimator 有权
公开(公告)号：US11634812B2
公开(公告)日：2023-04-25
申请号：US16539911
申请日：2019-08-13
申请人： ASM IP Holding BV
发明人： Eric James Shero , Carl Louis White , Mohith E. Verghese , Kyle Fondurulia , Timothy James Sullivan
IPC分类号： H01L21/00 , C23C16/448 , H01L21/67
摘要： Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

4. 发明授权

US11631639B2 Method of fabricating self-aligned via structures 有权
公开(公告)号：US11631639B2
公开(公告)日：2023-04-18
申请号：US17671394
申请日：2022-02-14
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chieh-Han Wu , Cheng-Hsiung Tsai , Chih Wei Lu , Chung-Ju Lee
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532 , H01L21/00
摘要： Interconnect structures and methods of forming the same are provided. An interconnect structure according to the present disclosure includes a conductive line feature over a substrate, a conductive etch stop layer over the conductive line feature, a contact via over the conductive etch stop layer, and a barrier layer disposed along a sidewall of the conductive line feature, a sidewall of the conductive etch stop layer, and a sidewall of the contact via.

5. 发明授权

US11626443B2 Semiconductor device including through via, semiconductor package, and method of fabricating the same 有权
公开(公告)号：US11626443B2
公开(公告)日：2023-04-11
申请号：US16926924
申请日：2020-07-13
申请人： Samsung Electronics Co., Ltd.
发明人： Yi Koan Hong , Taeseong Kim
IPC分类号： H01L21/00 , H01L27/146 , H01L21/768 , H01L23/00 , H01L23/48
摘要： A semiconductor device including a first structure including a first conductive pattern, the first conductive pattern exposed on an upper portion of the first structure, a mold layer covering the first conductive pattern, a second structure on the mold layer, and a through via penetrating the second structure and the mold layer, the through via electrically connected to the first conductive pattern, the through via including a first via segment in the second structure and a second via segment in the mold layer, the second via segment connected to the first via segment, an upper portion of the second via segment having a first width and a middle portion of the second via segment having a second width greater than the first width may be provided.

6. 发明授权

US11626436B2 Imaging device and image sensor 有权
公开(公告)号：US11626436B2
公开(公告)日：2023-04-11
申请号：US17338072
申请日：2021-06-03
申请人： NIKON CORPORATION
发明人： Sota Nakanishi
IPC分类号： H01L27/146 , H01L21/00 , G03B17/14 , H04N5/225
摘要： An imaging device, includes: an imaging unit in which are disposed a plurality of pixels, each including a filter that is capable of changing a wavelength of light passing therethrough to a first wavelength and to a second wavelength and a light reception unit that receives light that has passed through the filter, and that captures an image via an optical system; an analysis unit that analyzes the image captured by the imaging unit; and a control unit that controls the wavelength of the light to be transmitted, by the filter based upon a result of analysis by the analysis unit.

7. 发明授权

US11626350B2 Cutting a leadframe assembly with a plurality of punching tools 有权
公开(公告)号：US11626350B2
公开(公告)日：2023-04-11
申请号：US16839216
申请日：2020-04-03
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Chong Han Lim , Lee Han Meng@Eugene Lee , Anis Fauzi Bin Abdul Aziz , Wei Fen Sueann Lim , Siew Kee Lee
IPC分类号： H01L23/495 , H01L21/56 , H01L21/78 , H01L23/31 , H01L21/00 , H01L25/075 , H01L21/60
摘要： A method includes forming a leadframe assembly to have a pair of opposing sides, and having semiconductor die receiving portions extending between the opposing sides. The method also includes placing semiconductor dies on the leadframe assembly in the die receiving portions. Each die has a row of leads on each of two opposing sides of the die and a longitudinal axis parallel to the rows of leads. The longitudinal axis of each die is orthogonal to the opposing sides of the leadframe assembly. The method further includes applying mold compound to the semiconductor dies. The method includes punching through the leadframe assembly between the opposing sides using a first tool having a first tool longitudinal axis parallel to longitudinal axes of the dies.

8. 发明授权

US11621373B2 Optoelectronic component and method for producing an optoelectronic component 有权
公开(公告)号：US11621373B2
公开(公告)日：2023-04-04
申请号：US16635376
申请日：2018-06-29
申请人： OSRAM OLED GMBH
发明人： Guido Weiss
IPC分类号： H01L21/00 , H01L33/38 , H01L33/22
摘要： The invention relates to an optoelectronic device (100) comprising a semiconductor layer sequence (1) on a carrier (7), the semiconductor layer sequence (1) comprising at least one n-doped semiconductor layer (11), at least one p-doped semiconductor layer (12) and an active layer (13) sandwiched between the p- and n-doped semiconductor layers (11, 12), an reconnecting contact (2), which is configured for electrically contacting the n-doped semiconductor layer (11), a p-connecting contact (3), which is configured for electrically contacting the p-doped semiconductor layer (12), the n-connecting contact (2) being arranged on the side of the semiconductor layer sequence (1) facing away from the carrier (7), the n-connecting contact (2) having a first side (4) which is arranged facing the semiconductor layer sequence (1), wherein the first side (4) has two outer regions (43) and an inner region (44), viewed in lateral cross-section, which is delimited by the outer regions (43), wherein the outer regions (43) of the first side (4) are unstructured (42), and wherein the inner region (44) is structured (41).

9. 发明授权

US11621309B2 Light emitting device and display apparatus including the same 有权
公开(公告)号：US11621309B2
公开(公告)日：2023-04-04
申请号：US17135546
申请日：2020-12-28
申请人： SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
发明人： Sunghoon Lee , Seokho Song , Wonjae Joo
IPC分类号： H01L33/00 , H01L21/00 , H01L27/32 , G02B27/01 , H01L51/52
摘要： A light emitting device includes a metal reflective layer including a phase modulation surface on which oblong phase modulation elements are formed; a first electrode provided on the metal reflective layer; an organic emission layer that is provided on the first electrode and that emits light; and a second electrode provided on the organic emission layer, wherein the oblong phase modulation elements are arranged to form a geometric phase lens.

10. 发明授权

US11616136B2 High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability 有权
公开(公告)号：US11616136B2
公开(公告)日：2023-03-28
申请号：US17180048
申请日：2021-02-19
申请人： Wolfspeed, Inc.
发明人： Kyle Bothe , Evan Jones , Dan Namishia , Chris Hardiman , Fabian Radulescu , Terry Alcorn , Scott Sheppard , Bruce Schmukler
IPC分类号： H01L21/00 , H01L29/08 , H01L29/778 , H01L21/285 , H01L21/306 , H01L21/765 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/417 , H01L29/45 , H01L29/66 , H03F1/02 , H03F3/21
摘要： A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式