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1. 发明申请

US20020038238A1 Product information brokerage system 审中-公开
标题翻译：产品信息经纪系统
公开(公告)号：US20020038238A1
公开(公告)日：2002-03-28
申请号：US09768359
申请日：2001-01-25
发明人： Ichiro Fujita
IPC分类号： G06F017/60
CPC分类号： G06Q30/02 , G06Q30/0241
摘要： A product information brokerage system for mediating between a plurality of users and a plurality of manufacturers via an electronic network, the system including a user information storage unit for storing user attribute information and user-owned product information, a product information storage unit for storing product information, a product information providing unit for providing users with information related to the products owned by users based on the product information, and a user information providing unit for providing user information to manufacturers of the products owned by users based on the user attribute information and user-owned product information.
摘要翻译：一种用于经由电子网络在多个用户和多个制造商之间进行中介的产品信息经纪系统，该系统包括用于存储用户属性信息和用户拥有的产品信息的用户信息存储单元，用于存储产品的产品信息存储单元信息，产品信息提供单元，用于基于产品信息向用户提供与用户拥有的产品相关的信息;以及用户信息提供单元，用于基于用户属性信息向用户拥有的产品的制造商提供用户信息，以及用户拥有的产品信息。

2. 发明授权

US09768359B2 Semiconductor device, method for manufacturing same, light-emitting diode, and method for manufacturing same 有权
公开(公告)号：US09768359B2
公开(公告)日：2017-09-19
申请号：US15126352
申请日：2015-01-15
申请人： INTELLECTUAL DISCOVERY CO., LTD.
发明人： Tae Geun Kim , Kyung Heon Kim
IPC分类号： H01L33/00 , H01L33/44 , H01L33/62 , H01L33/36 , H01L33/42 , H01L33/40 , H01L33/32
CPC分类号： H01L33/44 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/36 , H01L33/40 , H01L33/42 , H01L33/62 , H01L2933/0016 , H01L2933/0025
摘要： A semiconductor device is disclosed, and the semiconductor device comprises: a semiconductor layer; and a transparent electrode which is formed from a resistance switching material and is formed on one side of the semiconductor layer, wherein the transparent electrode includes a channel on which an electron is capable of hopping and a conductive path formed by applying a voltage that is a threshold voltage or more, and the threshold voltage for forming the conductive path is lowered by the channel.

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