The present invention provides a transverse dual-field-effect tube. More than one gate groove structures are added into the source structure of a single cell, a gate lead-out terminal is led out from the gate groove to be taken as a gate electrode, so that when a certain voltage is supplied to the gate electrode, the gate insulation layers at two sides of the groove and a first conductive type trap form inversion layers, namely conductive channels; and when a drain structure (a first conductive type drain doping area) has voltage, there is current flowing in the conductive channels. If the number of the gate groove structures is N, the number of the conductive channels flowing the current are 2N, and the current density is substantially increased compared to the current density in the single cell structure of a traditional LDMOS, and therefore the current density of each device may be entirely improved in the multi-cell structure. In the same work current, the transverse insulated gate bipolar transistor allows the area of the device to be reduced and the conduction resistance to be decreased because of the bigger work current of the single cell structure.