基本信息:
- 专利标题： 一种P型单晶太阳电池的制备方法
- 专利标题（英）：Preparation method of P-type single crystal solar cell
- 申请号：CN201611036687.X 申请日：2016-11-23
- 公开(公告)号：CN106409978A 公开(公告)日：2017-02-15
- 发明人： 魏青竹 , 倪志春 , 刘晓瑞 , 张三洋
- 申请人： 中利腾晖光伏科技有限公司
- 申请人地址： 江苏省苏州市常熟市沙家浜常昆工业园腾晖路1号
- 专利权人： 中利腾晖光伏科技有限公司
- 当前专利权人： 苏州腾晖光伏技术有限公司
- 当前专利权人地址： 江苏省苏州市常熟市沙家浜常昆工业园腾晖路1号
- 代理机构： 苏州创元专利商标事务所有限公司
- 代理人： 孙仿卫; 李萍
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
The invention discloses a preparation method of a P-type single crystal solar cell. According to the method, the open circuit voltage and short circuit current of the cell are remarkably improved through re-cleaning of a textured silicon wafer and a phosphorus ion implantation technology, and the conversion efficiency of the cell is improved. The preparation method of the P-type single crystal solar cell comprises the steps that S1, the silicon wafer is textured; S2, lye and acid liquid rinsing is carried out on the textured silicon wafer, and then the textured silicon wafer is blown by an air knife; S3, phosphorus ion implantation is carried out on the front of the silicon wafer; S4, the silicon wafer is annealed; S5, a reverse reflection silicon nitride film is made on the front of the silicon wafer; and S6, gate electrodes are printed on the front and back of the silicon wafer, and sintering is carried out.