
基本信息:
- 专利标题: 铜铟镓硒合金的制备方法
- 专利标题(英):Preparing method for copper-indium-gallium-selenium alloy
- 申请号:CN201710287772.1 申请日:2017-04-27
- 公开(公告)号:CN107058791A 公开(公告)日:2017-08-18
- 发明人: 易鉴荣 , 唐臻 , 林荔珊
- 申请人: 柳州豪祥特科技有限公司
- 申请人地址: 广西壮族自治区柳州市柳东新区官塘创业园研发中心2号楼511号
- 专利权人: 柳州豪祥特科技有限公司
- 当前专利权人: 柳州豪祥特科技有限公司
- 当前专利权人地址: 广西壮族自治区柳州市柳东新区官塘创业园研发中心2号楼511号
- 代理机构: 北京远大卓悦知识产权代理事务所
- 代理人: 靳浩
- 主分类号: C22C9/00
- IPC分类号: C22C9/00 ; C22C1/00
The invention discloses a preparing method for a copper-indium-gallium-selenium alloy. The preparing method includes the steps that raw materials of copper, indium and gallium are selected according to weight parts, broken into coarse powder and are mixed evenly; airflow grinding is conducted; the mixed powder obtained after airflow grinding is loaded into a reaction kettle, and argon is charged into the reaction kettle after vacuum pumping is conducted; the temperature of the reaction kettle is increased to 300 DEG C to 400 DEG C; the temperature of the reaction kettle is increased to 600 DEG C to 800 DEG C; the temperature of the reaction kettle is increased to 900 DEG C to 1100 DEG C; the reaction kettle is cooled to 80 DEG C to 100 DEG C, and a copper-indium-gallium alloy is obtained; the copper-indium-gallium alloy and selenium powder are loaded to the two ends of a quarts tube correspondingly, and vacuum pumping operation is conducted on the quarts tube; a tubular furnace is adopted for heating one end of the copper-indium-gallium alloy to 1050 DEG C to 1100 DEG C, and the temperature is kept; the end provided with the selenium powder is heated while the end provided with the copper-indium-gallium alloy is heated by the tubular furnace; copper, indium, gallium and selenium are reacted for 20 h to 30 h under the temperature of 800 DEG C; and the tubular furnace is closed, heating is stopped, cooling is conducted to the room temperature, and the copper-indium-gallium-selenium alloy is obtained. By means of the preparing method, the reaction time is shortened, and industrial production is facilitated.