基本信息:
- 专利标题： RAMO4基板及氮化物半导体装置
- 专利标题（英）：RAMO4 SUBSTRATE AND NITRIDE SEMICONDUCTOR APPARATUS
- 申请号：CN201810467353.0 申请日：2018-05-16
- 公开(公告)号：CN108963042A 公开(公告)日：2018-12-07
- 发明人： 上田章雄
- 申请人： 松下电器产业株式会社
- 申请人地址： 日本大阪府
- 专利权人： 松下电器产业株式会社
- 当前专利权人： 松下控股株式会社
- 当前专利权人地址： 日本大阪府
- 代理机构： 北京市柳沈律师事务所
- 代理人： 邸万奎
- 优先权： 2017-102862 20170524 JP
- 主分类号： H01L33/16
- IPC分类号： H01L33/16 ; C30B15/00 ; C30B25/18 ; C30B29/22 ; C30B29/40
The invention provides an RAMO4 substrate and a nitride semiconductor apparatus having an appropriate off-angle and off direction, capable of step flow-growing a group III nitride semiconductor. The RAMO4 substrate including a single crystal represented by a general formula RAMO4, wherein R represents one or more trivalent elements selected from a group consisting of Sc, In, Y, and lanthanide elements, A represents one or more trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn,Fe(II), Co, Cu, Zn, and Cd, in which a main plane of the RAMO4 substrate has an off-angle a tilted theta a DEG with respect to an M-axis direction from a C-plane and 0.05 DEG <= the absolute value oftheta a <= 0.8 DEG is satisfied.
公开/授权文献:
- CN108963042B RAMO4基板及氮化物半导体装置 公开/授权日：2022-07-26