The invention provides a hybrid integrated thick film heating device for a micro atomic gas chamber, and a preparation method thereof. With the thick film technology, heating resistors are printed ona substrate layer by layer and insulated isolation is carried out to form a multi-layer heating structure; a triode, a thermistor and a single-chip microcomputer and other elements are integrated on the substrate and each heating resistor is connected with the triode and is controlled by a DAC output port of the single-chip microcomputer; the single-chip microcomputer collects the voltage of the thermistor and a temperature signal by a ADC module; after processing based on a PID algorithm, the heating power of the heating resistor at each layer is controlled by the DAC to realize multi-gear continuously controlled high-integration heating device. According to the invention, the heating device has advantages of simple circuit structure, high integration degree and integration of controllingand heating; and various problems of the existing micro atomic gas chamber heating device can be solved. The hybrid integrated thick film heating device can be applied to more devices needing heat; moreover, the process is simple and the heating device is easy to prepare.