The embodiment of the invention provides a joint material. The joint material comprises a supporting layer and solder layers arranged on the opposite side surfaces of the supporting layer. The supporting layer comprises at least one of Cu metal, Ni metal, Ag metal, Ti metal, Zn metal and alloys of the Cu metal, the Ni metal, the Ag metal, the Ti metal, the Zn metal, the supporting layer is provided with a porous structure, and the solder layers comprise at least one of tin-based solder and indium-based solder. According to the joint material, solder of the solder layers and the metal or alloysof the supporting layer can react at the joint temperature to form a high melting point intermetallic compound with a melting point higher than the joint temperature, so that a high temperature resistant joint layer is obtained through lower joint temperature, and multiple reflux can be resisted; and the supporting structure is provided with the porous structure, and the porous structure of the supporting layer is retained in a joint layer to effectively buffer the internal stress and improve the joint reliability. The embodiment of the invention further provides a semiconductor device usingthe joint material to joint and a manufacturing method of the semiconductor device.