
基本信息:
- 专利标题: 一种IGBT模块状态监测装置及方法
- 专利标题(英):IGBT module state monitoring device and method
- 申请号:CN201910825141.X 申请日:2019-09-03
- 公开(公告)号:CN110632490A 公开(公告)日:2019-12-31
- 发明人: 张品佳 , 杨雁勇 , 王政 , 朱宏栋
- 申请人: 清华大学 , 远景能源(江苏)有限公司
- 申请人地址: 北京市海淀区清华园1号
- 专利权人: 清华大学,远景能源(江苏)有限公司
- 当前专利权人: 清华大学,远景能源(江苏)有限公司
- 当前专利权人地址: 北京市海淀区清华园1号
- 代理机构: 北京中知法苑知识产权代理事务所
- 代理人: 李明
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
The invention discloses an IGBT module state monitoring device and method. The device comprises an IGBT module, a gate turn-on voltage overshoot monitoring module, a driving circuit, a bonding wire state judgment module and a signal acquisition module; and monitored actual gate turn-on voltage overshoot is compared with a preset reference gate turn-on voltage overshoot threshold value, so that thebreaking condition of a bonding wire is obtained. With the IGBT module state monitoring device and method of the invention adopted, the monitoring problem of the aging of the bonding wire of an IGBTin a power electronic converter is solved; the falling off of the bonding wire is characterized by the gate turn-on voltage overshoot; and therefore, invasion to a circuit can be avoided, and the slight aging monitoring of the falling off of the bonding wire can be realized. The IGBT module state monitoring device and method have the advantages of high resolution, no invasion, real-time on-line monitoring, high sampling frequency and low cost, and is of great significance to the monitoring of IGBTs and the reliability evaluation of power electronic converters.
公开/授权文献:
- CN110632490B 一种IGBT模块状态监测装置及方法 公开/授权日:2020-11-03
IPC结构图谱:
G | 物理 |
--G01 | 测量;测试 |
----G01R | 测量电变量;测量磁变量(通过转换成电变量对任何种类的物理变量进行测量参见G01类名下的 |
------G01R31/00 | 电性能的测试装置;电故障的探测装置;以所进行的测试在其他位置未提供为特征的电测试装置 |
--------G01R31/26 | .单个半导体器件的测试 |