基本信息:
- 专利标题： 非揮發性電阻式記憶體及其操作
- 专利标题（英）：A nonvolatile resistance memory and its operation thereof
- 专利标题（中）：非挥发性电阻式内存及其操作
- 申请号：TW104124275 申请日：2015-07-27
- 公开(公告)号：TW201604872A 公开(公告)日：2016-02-01
- 发明人： 莊紹勳 , CHUNG, STEVE S. , 謝易叡 , HSIEH, ERAY
- 申请人： 國立交通大學 , NATIONAL CHIAO TUNG UNIVERSITY
- 申请人地址： 新竹市
- 专利权人： 國立交通大學,NATIONAL CHIAO TUNG UNIVERSITY
- 当前专利权人： 國立交通大學,NATIONAL CHIAO TUNG UNIVERSITY
- 当前专利权人地址： 新竹市
- 代理人： 李世章; 秦建譜
- 优先权： 62/029,582 20140728
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; H01L45/00
A memory cell and the associated array circuits are disclosed. The memory array circuit includes a plurality of memory units, in which each of the memory units includes a storage device and a field-effect transistor. The storage device includes a top electrode, a bottom electrode and an oxide-based dielectric layer. The top electrode is formed by metal or metallic oxide dielectrics and connected to a word line. The bottom electrode is formed by metal, and the oxide-based dielectric layer is placed between the top electrode and the bottom electrode. The field-effect transistor includes a gate terminal connected to the bottom electrode, a source terminal connected to a ground line, and a drain terminal connected to a bit line. The resistance of the storage device is configured to be adjusted according to a first voltage applied to the word line and a second voltage applied to the bit line.
公开/授权文献:
- TWI560715B 非揮發性電阻式記憶體及其操作 公开/授权日：2016-12-01