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91. 发明授权

EP3013997B1 BIS(TRIMETHYLSILYL) SIX-MEMBERED RING SYSTEMS AND RELATED COMPOUNDS AS REDUCING AGENTS FOR FORMING LAYERS ON A SUBSTRATE 有权
标题翻译： BIS（三甲基甲硅烷基）六元环体系和作为还原剂在基材上形成层的相关化合物
公开(公告)号：EP3013997B1
公开(公告)日：2018-05-02
申请号：EP14817237.2
申请日：2014-06-27
申请人： Wayne State University
发明人： WINTER, Charles , KLESKO, Joseph Peter
IPC分类号： C23C16/44 , C23C16/52 , C23C16/06 , C07F7/08 , C23C16/18 , C23C16/455
CPC分类号： C23C16/18 , C23C16/45534 , C23C16/45553
摘要： A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al.

92. 发明公开

EP3013997A4 BIS(TRIMETHYLSILYL) SIX-MEMBERED RING SYSTEMS AND RELATED COMPOUNDS AS REDUCING AGENTS FOR FORMING LAYERS ON A SUBSTRATE 有权
标题翻译：六元双（三甲基硅烷基）环体系和连接，作为还原剂电影的制作ON A SUBSTRATE
公开(公告)号：EP3013997A4
公开(公告)日：2017-05-31
申请号：EP14817237
申请日：2014-06-27
申请人： UNIV WAYNE STATE
发明人： WINTER CHARLES , KLESKO JOSEPH PETER
IPC分类号： C23C16/44 , C07F7/08 , C23C16/06 , C23C16/52
CPC分类号： C23C16/18 , C23C16/45534 , C23C16/45553
摘要： A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al.
摘要翻译：在氧化状态中具有在原子的第1化合物与双（三甲硅烷基）六元环系统或相关的化合物反应以形成具有在相对于所述第一化合物还原态的原子的第二化合物。在氧化状态的原子被选自元素周期表，镧系元素的组2-12的选择，砷，锑，铋，碲，硅，锗，锡，和Al。

93. 发明公开

EP3029175A1 Process for the production of porous thin films 审中-公开
标题翻译：生产多孔薄膜的方法
公开(公告)号：EP3029175A1
公开(公告)日：2016-06-08
申请号：EP14196567.3
申请日：2014-12-05
申请人： BASF SE
发明人： Ruettinger, Wolfgang , Wagloehner, Steffen , Loeffler, Daniel , Ahlf, Maraike
IPC分类号： C23C16/455 , H01L21/02 , C23C16/30 , C23C16/56 , H01L21/768
CPC分类号： H01L21/02203 , C23C16/401 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45553 , C23C16/56 , H01L21/02126 , H01L21/02219 , H01L21/0228 , H01L21/7682 , H01L2221/1047
摘要： The present invention relates to the production of porous thin films, in particular by atomic layer deposition. The present invention relates to a process for producing porous films comprising the steps
(a) exposing a solid substrate to a vapor containing an organic compound (A), whereby a submonolayer of the organic compound (A) covalently bound to the surface of the solid substrate is formed,
(b) exposing the solid substrate to a vapor containing a compound of general formula (I) SiX 4 (I),
wherein X is hydrogen, a halogen, an alkoxy, an aryloxy, or an amine group,
(c) exposing the solid substrate to a vapor containing an organic compound (B) which has at least two functional groups out of which at least one can form a covalent bond with the surface-bound organic compound (A),
(d) performing the steps
(d1) exposing the solid substrate to a vapor containing water, and
(d2) exposing the solid substrate to a vapor containing a compound of general formula (I), (e) exposing the solid substrate to a vapor containing an organic compound (C) which has at least two functional groups out of which at least one can form a covalent bond to the surface-bound organic compound (B),

(f) removing organic parts from the film formed on the surface of the solid substrate.
摘要翻译：本发明涉及多孔薄膜的生产，特别是原子层沉积。本发明涉及一种制造多孔膜的方法，该方法包括以下步骤：（a）将固体基材暴露于含有有机化合物（A）的蒸气中，由此使有机化合物（A）的亚单分子层共价结合到固体表面（b）将固体基质暴露于含有其中X是氢，卤素，烷氧基，芳氧基或胺基的通式（I）SiX4（I）的化合物的蒸气，（c）将固体基材暴露于含有具有至少两个官能团的有机化合物（B）的蒸气，其中至少一个官能团可与表面结合的有机化合物（A）形成共价键，（d）执行步骤（（d2）将固体基质暴露于含有通式（I）化合物的蒸气中，（e）将固体基质暴露于含有机化合物（C）的蒸气中，其中至少有两个功能组可以与表面结合的有机化合物（B）形成共价键，（f）从形成在固体基质表面上的膜中除去有机部分。

94. 发明公开

EP2580371A2 LOW-TEMPERATURE SYNTHESIS OF SILICA 审中-公开
标题翻译：硅的低温合成
公开(公告)号：EP2580371A2
公开(公告)日：2013-04-17
申请号：EP11755460.0
申请日：2011-06-08
申请人： President and Fellows of Harvard College
发明人： AIZENBERG, Joanna , HATTON, Benjamin
IPC分类号： C23C16/40 , C23C16/54 , C23C16/455
CPC分类号： C23C16/402 , B05D3/10 , B05D3/105 , B05D3/107 , C23C16/45525 , C23C16/45534 , C23C16/45551 , C23C16/45595 , C23C16/545
摘要： An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.

95. 发明公开

EP2479313A1 Amorphous Ge/Te deposition process 审中-公开
标题翻译： Amorphes Ge / Te Beschichtungsverfahren
公开(公告)号：EP2479313A1
公开(公告)日：2012-07-25
申请号：EP12164278.9
申请日：2008-10-31
申请人： Advanced Technology Materials, Inc.
发明人： Chen, Philip S.H. , Hunks, William , Chen, Tianniu , Stender, Matthias , Xu, Chongying , Roeder, Jeffrey F. , Li, Weimin
IPC分类号： C23C16/30 , H01L45/00 , C23C16/455 , C23C16/448 , C23C16/56 , C07F7/30
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN) 2 } 2 Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体有用地用于形成锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2 Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

96. 发明公开

EP2062995A1 Amorphous Ge/Te deposition process 有权
标题翻译： Amporphes Ge / Te Beschichtungsverfahren
公开(公告)号：EP2062995A1
公开(公告)日：2009-05-27
申请号：EP08019157.0
申请日：2008-10-31
申请人： Advanced Technology Materials, Inc.
发明人： Chen, Philip S.H. , Hunks, William , Chen, Tianniu , Stender, Matthias , Xu, Chongying , Roeder, Jeffrey R. , Li, Weimin , Hendrix, Bryan C. , Cameron, Thomas M. , Stauf, Gregory T.
IPC分类号： C23C16/30 , H01L45/00
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN) 2 } 2 Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体有用地用于形成锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2 Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

97. 发明公开

EP1913174A1 ATOMIC LAYER DEPOSITION OF RUTHENIUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND SELECTED RUTHENIUM COMPLEXES 审中-公开
标题翻译： ATOM管理存放率含钌薄膜中表面活化剂和选定的钌
公开(公告)号：EP1913174A1
公开(公告)日：2008-04-23
申请号：EP06789514.4
申请日：2006-08-07
申请人： E.I. du Pont de Nemours and Company
发明人： THOMPSON, Jeffery, Scott
IPC分类号： C23C16/455 , C23C16/18
CPC分类号： H01L21/76873 , C23C16/02 , C23C16/18 , C23C16/45525 , C23C16/45534 , H01L21/28562
摘要： This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes using surface-activating agents, and to ruthenium complexes that can be used as ruthenium precursors in these processes.

98. 发明公开

EP1485513A2 ALD METHOD AND APPARATUS 审中-公开
标题翻译： ALD的方法和装置
公开(公告)号：EP1485513A2
公开(公告)日：2004-12-15
申请号：EP03716378.9
申请日：2003-03-07
申请人： Sundew Technologies, LLC
发明人： SNEH, Ofer
IPC分类号： C23C2/00
CPC分类号： C23C16/45529 , C23C16/02 , C23C16/14 , C23C16/306 , C23C16/34 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45534
摘要： A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.

99. 发明公开

EP1242647A1 METHOD OF DEPOSITING TRANSITION METAL NITRIDE THIN FILMS 有权
标题翻译： VERFAHREN ZUM ABSCHEIDEN VONDÜNNENÜBERGANGSMETALL-NITRIDFILMEN
公开(公告)号：EP1242647A1
公开(公告)日：2002-09-25
申请号：EP00969596.6
申请日：2000-10-13
申请人： ASM Microchemistry Oy
发明人： ELERS, Kai-Erik , HAUKKA, Suvi, Päivikki , SAANILA, Ville, Antero , KAIPIO, Sari, Johanna , SOININEN, Pekka, Juha
IPC分类号： C23C16/44 , C23C16/00 , C30B25/02 , H05K3/00
CPC分类号： C30B29/38 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45531 , C23C16/45534 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/76843
摘要： This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulses of a metal source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.
摘要翻译：本发明涉及通过原子层沉积（ALD）型方法沉积过渡金属氮化物薄膜的方法。根据该方法，可以通过金属源材料的气相脉冲，能够还原金属源材料的还原剂和能够与还原金属源材料反应的氮源材料交替地并且顺序地进料到反应空间中并与底物。根据本发明，当使用还原剂时，当与金属源材料反应时能够形成气态反应副产物的硼化合物。

100. 发明公开

EP3366808A1 METHOD OF FORMING LAYERS ON A SUBSTRATE AND COMPOUND 审中-公开
公开(公告)号：EP3366808A1
公开(公告)日：2018-08-29
申请号：EP18158881.5
申请日：2014-06-27
申请人： Wayne State University
发明人： WINTER, Charles , KLESKO, Joseph Peter
IPC分类号： C23C16/44 , C23C16/52 , C23C16/06 , C07F7/08
CPC分类号： C23C16/18 , C23C16/45534 , C23C16/45553
摘要： A method of forming a layer on a substrate and a compound. The compound hasan atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al.

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