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91. 发明授权

US07016391B2 Gain-coupled distributed feedback semiconductor laser device and production method therefor 失效
标题翻译：增益耦合分布反馈半导体激光器件及其制作方法
公开(公告)号：US07016391B2
公开(公告)日：2006-03-21
申请号：US10221363
申请日：2001-02-07
申请人： Koji Takahashi
发明人： Koji Takahashi
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/1231 , H01S5/3202 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/3432 , H01S5/3434 , H01S5/34346 , H01S5/3438
摘要： The presence or absence and the intensity of refractive index distribution are easily controlled with high reproducibility without depending on the fabricating process accuracy. InGaAs well layers (14a) and (14b), which have a narrow bandgap and a high refractive index, are enclosed by a lower barrier layer (13), an intermediate barrier layer (15), an upper barrier layer (16) and a buried layer (18) of GaAsN-based materials of a wide bandgap. Then, by adjusting the nitrogen crystal mixture ratio of the GaAsN-based materials that constitute the barrier layers (13), (15) and (16) and the buried layer (18), the presence or absence and the intensity of the refractive index distribution are controlled. Thus, the refractive index distribution is easily controlled with high reproducibility without considering the configuration of a diffraction grating (17), a refractive index balance with respect to the buried layer (18) and so on, i.e., without depending on the fabricating process accuracy.
摘要翻译：折射率分布的存在或不存在和强度易于以高再现性进行控制，而不依赖于制造工艺的精度。具有窄带隙和高折射率的InGaAs阱层（14a）和（14b）被下阻挡层（13），中间阻挡层（15），上阻挡层（16），以及宽带隙的GaAsN基材料的掩埋层（18）。然后，通过调整构成阻挡层（13），（15）和（16）和掩埋层（18）的GaAsN基材料的氮结晶混合比，折射率的存在或不存在和强度分配受到控制。因此，不考虑衍射光栅（17）的构造，相对于掩埋层（18）的折射率平衡等，即不依赖于制造工艺精度，可以以高再现性容易地控制折射率分布。

92. 发明申请

US20050129078A1 Multicomponent barrier layers in quantum well active regions to enhance confinement and speed 有权
标题翻译：量子阱活性区域中的多组分势垒层，以增强约束和速度
公开(公告)号：US20050129078A1
公开(公告)日：2005-06-16
申请号：US10956798
申请日：2004-10-01
申请人： Ralph Johnson
发明人： Ralph Johnson
IPC分类号： H01L21/203 , H01L33/00 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/18308 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00
摘要： Multi-component barrier layers include formation of a GaAs layer and at least one adjacent GaAsN layer. The resulting multi-component barrier layer shape can provide enhanced (extended) offset for capture of holes and enhanced electrons. Other benefits include: a small amount of strain compensation; poorer spatial overlap of higher confined states reducing parasitics at high bias, with some small effect on the lowest confined states. Quantum wells and associated barriers layers can be grown with combinations of gallium, (Ga), arsenic, (As), nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., with wavelengths over 1200 nm. Layers of strained quantum well material can also be supported by mechanical stabilizers.
摘要翻译：多组分阻挡层包括形成GaAs层和至少一个相邻的GaAsN层。所得的多组分阻挡层形状可以提供用于捕获空穴和增强电子的增强（扩展）偏移。其他好处包括：少量应变补偿; 较高限制状态较差的空间重叠减少了高偏倚的寄生效应，对最低限制状态影响较小。量子阱和相关势垒层可以通过放置在其中的镓（Ga），砷（As），氮（N），铝（Al），锑（Sb），磷（P）和/或铟（In）或关于典型的GaAs衬底，以实现长波长VCSEL性能，例如，波长超过1200nm。应变量子阱材料层也可以由机械稳定器支撑。

93. 发明申请

US20050123015A1 Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers 有权
标题翻译：在包含氮和AlGaAs限制层的有源区之间使用GaAs延伸势垒层
公开(公告)号：US20050123015A1
公开(公告)日：2005-06-09
申请号：US10956985
申请日：2004-10-01
申请人： Ralph Johnson
发明人： Ralph Johnson
IPC分类号： H01L21/203 , H01L33/00 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/18308 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00
摘要： Incorporation of a GaAs “Extended lower barrier” in between quantum wells using nitrogen and confining layers using aluminum. Not to be confused with barrier layers used in quantum wells, the extended lower barrier is formed between the active region and the outer/confining layers where N and Al are respectively used. N and Al can be separated in the case where, for example, AlGaAs is being used in the confining layers and any nitrogen containing material is being used in the active region. Aluminum and Nitrogen when allowed to combine can cause deep traps and resultant non-radiative recombination, therefore N and Al pairing should be prevented. The GaAs extended barrier layer can provide a protective measure against such combination.
摘要翻译：使用铝在氮和限制层之间在量子阱之间并入GaAs“扩展的下阻挡层”。不要与在量子阱中使用的阻挡层混淆，在有源区和分配使用N和Al的外/限制层之间形成扩展的下势垒。在例如在限制层中使用AlGaAs并且在活性区域中使用任何含氮材料的情况下，可以分离N和Al。当合并铝和氮时，可能导致深陷阱和非辐射复合，因此应防止N和Al配对。 GaAs延伸的阻挡层可以提供抵抗这种组合的保护措施。

94. 发明授权

US06775311B2 Semiconductor laser device and optical disk recording and reproducing apparatus 失效
标题翻译：半导体激光装置和光盘记录和再现装置
公开(公告)号：US06775311B2
公开(公告)日：2004-08-10
申请号：US10241838
申请日：2002-09-12
申请人： Shuichi Hirukawa
发明人： Shuichi Hirukawa
IPC分类号： H01S500
CPC分类号： B82Y20/00 , G11B7/127 , H01S5/2045 , H01S5/2231 , H01S5/3403 , H01S5/34326 , H01S5/3434 , H01S5/34346
摘要： There is provided a semiconductor laser device implementing a single transverse mode oscillation in an oscillation wavelength of 780 nm band and also having high reliability and long life in high-output driving state, and an optical disk recording and reproducing apparatus with use of the semiconductor laser device. A multiple quantum well active layer 105 is composed of InGaAsP, and a first cladding layer 103, a second cladding layer 107, a third cladding layer 109, and a first current blocking layer 112 are structured from III-V group compound semiconductor containing only As as V group element. Inside the first current blocking layer 112, a hollow portion 130 is provided in the vicinity of and approximately parallel to the ridge stripe-shaped third cladding layer 109.
摘要翻译：提供了在780nm波段的振荡波长中实现单横波振荡并且在高输出驱动状态下具有高可靠性和长寿命的半导体激光器件，以及使用半导体激光器的光盘记录和再现装置设备。多量子阱有源层105由InGaAsP构成，第一包层103，第二包层107，第三包层109和第一电流阻挡层112由仅包含As的III-V族化合物半导体构成作为V组元素。在第一电流阻挡层112的内部，在脊条状的第三包覆层109的附近并且大致平行地设置有中空部130。

95. 发明申请

US20040084667A1 Semiconductor device and method of crystal growth 失效
标题翻译：半导体器件和晶体生长方法
公开(公告)号：US20040084667A1
公开(公告)日：2004-05-06
申请号：US10473035
申请日：2003-09-26
发明人： Koji Takahashi
IPC分类号： H01L029/06 , H01L029/12
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02395 , H01L21/02458 , H01L21/02463 , H01L21/02466 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02631 , H01L21/182 , H01S5/1003 , H01S5/2231 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34346 , H01S2304/00
摘要： A semiconductor device (100) has, as its well layer, a III-V compound semiconductor layer (106) containing, as V-group components, nitrogen, antimony, and one or more V-group elements other than nitrogen and antimony to improve emission characteristics. Such a III-V compound semiconductor layer is formed by repeating a cycle including a process of simultaneously supplying a plurality of sources containing at lest indium, and a process of simultaneously supplying a plurality of sources not containing indium but containing antimony.
摘要翻译：半导体装置（100）作为其阱层具有作为V族成分含有氮，锑和除了氮和锑以外的一种以上的V族元素的III-V族化合物半导体层（106），以提高排放特征。这样的III-V化合物半导体层是通过重复包括同时供给至少含有铟的多种源的工艺的循环，以及同时供给多个不含铟但含有锑的源的工序而形成的。

96. 发明申请

US20030219917A1 System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers 审中-公开
标题翻译：使用迁移增强外延来平坦化有源层的系统和方法以及与垂直腔表面发射激光器相关联的量子阱的机械稳定性
公开(公告)号：US20030219917A1
公开(公告)日：2003-11-27
申请号：US10352293
申请日：2003-01-27
发明人： Ralph H. Johnson , Virgil J. Blasingame
IPC分类号： H01L021/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/18308 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00
摘要： Methods and Systems producing flattening layers associated with nitrogen-containing quantum wells and to prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum wells interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve. The gate valve allows the nitrogen source to be completely cut-off from the chamber during non-nitrogen processing steps to achieve the flattening layers described herein. In at least nitrogen containing layers, 3-dimensional growth is also reduced by using high arsenic fluxes, and by using substantially As4 as the main constituent of the arsenic flux.
摘要翻译：制备与含氮量子阱相关的扁平层的方法和系统，并且使用高As助熔剂来防止含氮层的3-D生长。 MEE（迁移增强外延）用于平坦化层并增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。通过在量子阱之间，之前和/或之后交替沉积III族和V族的单一原子层来执行MEE。在使用GaAs的情况下，可以通过在MBE系统中交替地打开和关闭Ga和As快门来实现该过程，同时防止两者同时打开。在使用氮气的情况下，该系统包含防止氮气进入MBE处理室（例如闸阀）的机械装置。在非氮处理步骤期间，闸阀允许氮源与室完全切断以实现本文所述的扁平化层。在至少含氮层中，通过使用高砷通量，并且通过使用基本上As 4作为砷通量的主要成分，也可以降低3维生长。

97. 发明申请

US20030179792A1 Semiconductor laser structure 有权
标题翻译：半导体激光器结构
公开(公告)号：US20030179792A1
公开(公告)日：2003-09-25
申请号：US10181854
申请日：2003-02-21
发明人： Henning Riechert , Anton Yurevitch Egorov
IPC分类号： H01S005/00
CPC分类号： H01S5/343 , B82Y20/00 , H01S5/32366 , H01S5/32375 , H01S5/34346 , H01S5/34353
摘要： The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InxGa1nullxAsyN1nully with varying factors x and y, where, in particular, xnull0 and ynull1.
摘要翻译：有源层（1）和阻挡层（2）包含III族组分，V族组分和氮，由此活性层是四元材料，并且阻挡层是三元材料，或者为了匹配晶格有源层对阻挡层的性质，阻挡层中的氮含量较高。有源层优选为InGaAsN，势垒层为具有较高氮含量的InGaAsN或GaAsN。超晶格可以存在于势垒层中，例如，具有变化因子x和y的InxGa1-xAsyN1-y的一系列薄层，其中特别是x = 0和y = 1。

98. 发明授权

KR101527840B1 고 주입 효율 극성 및 무극성 Ⅲ-질화물 광 에미터 有权
标题翻译：高效注射效率极性和非极性Ⅲ型硝酸盐光发射体
公开(公告)号：KR101527840B1
公开(公告)日：2015-06-11
申请号：KR1020127022916
申请日：2011-02-02
申请人： 오스텐도 테크놀로지스 인코포레이티드
发明人： 키신미하일브이 , 엘-고루리허쎄인에스
IPC分类号： H01S5/34 , H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/34346
摘要： 극성및 무극성Ⅲ-질화물발광구조체의주입효율은에미터의 MQW(Multiple Quantum Well) 활성영역내의다른양자우물의불균일한군집에의해크게열화된다. 불균일 QW 군집은깊은활성 QW를가진장파장에미터에서더욱크게이루어진다. 극성및 무극성구조체에있어서, 방출될광의원하는파장에의거한, 광학적도파관층및/또는장벽층으로의인듐및/또는알루미늄의유입은 QW 군집의균일성을개선하고, 구조주입효율을증가시킨다.

99. 发明授权

KR101181182B1 질화물 반도체 발광소자 및 그 제조방법 有权
标题翻译：使用氮化合物半导体的发光装置及其制造方法
公开(公告)号：KR101181182B1
公开(公告)日：2012-09-18
申请号：KR1020040092097
申请日：2004-11-11
申请人： 엘지이노텍 주식회사
发明人： 양승현
IPC分类号： H01L33/04 , H01L33/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/02436 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/06 , H01S5/0213 , H01S5/34333 , H01S5/34346 , H01S5/34386 , H01S2301/04
摘要： 본 발명은 기판위에 제1 질화물 반도체층을 형성시키는 단계와, 상기 제1 질화물 반도체층위에 수소 분위기와 고온 조건하에서 성장시킨 배리어층을 포함하는 활성층을 형성시키는 단계와, 상기 활성층위에 제2 질화물 반도체층을 형성시키는 단계를 포함하여 구성되는 질화물 반도체 발광소자 제조방법 및 그에 따라 제조되는 질화물 반도체 발광소자에 관한 것이다. 이와 같은 본 발명에 따라 제조되는 질화물 반도체 발광소자에서는 활성층 하부에 존재하는 격자결함의 전파가 차단됨으로써 질화물 반도체의 In
x Ga
1-x N(0≤x≤1)/In
y Ga
1-y N(0≤y≤1) 사이의 큰 격자부정합으로 인한 결정결함이 감소되고 활성층의 결정성이 높아지므로 높은 In 조성의 In
x Ga
1-x N(0≤x≤1)를 갖는 박막 성장층에 의한 발광효율의 증가와 높은 신뢰성을 가지는 소자 제작이 가능하게 되었다.

발광소자, 질화물 반도체, 활성층, 장벽층, 시드층

100. 发明授权

KR100550158B1 질화물 반도체 발광소자 및 그것을 포함한 광학장치 失效
标题翻译：氮化物半导体发光器件和包括其的光学器件
公开(公告)号：KR100550158B1
公开(公告)日：2006-02-08
申请号：KR1020037004167
申请日：2001-09-17
申请人： 샤프 가부시키가이샤
发明人： 츠다유조 , 이토시게토시 , 아라키마사히로
IPC分类号： H01S5/30
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/34346
摘要： 본 발명의 일태양에 따른 질화물 반도체 발광소자는, 양자웰층 및 장벽층이 교대로 적층된 다중 양자웰구조를 갖는 발광층 (106)을 포함한다. 웰층은, In을 함유한 질화물 반도체로 형성되고, 장벽층은, As, P 또는 Sb를 포함하는 질화물 반도체로 형성된다. 본 발명의 다른 태양에 따른 질화물 반도체 발광소자는, 양자웰층 및 장벽층이 교대로 적층된 발광층을 포함한다. 웰층은, GaN
1-xyz As
x P
y Sb
z (0＜x+y+z≤0.3)로 형성되고, 장벽층은, In을 함유한 질화물 반도체로 형성된다.
摘要翻译：根据本发明一个方面的氮化物半导体发光器件包括具有多量子阱结构的发光层106，其中量子阱层和阻挡层交替堆叠。阱层由包含In的氮化物半导体形成，并且阻挡层由包含As，P或Sb的氮化物半导体形成。根据本发明另一方面的氮化物半导体发光器件包括发光层，其中量子阱层和阻挡层交替层叠。阱层由GaN制成

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