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21. 发明专利

JPH0549634B2 失效
公开(公告)号：JPH0549634B2
公开(公告)日：1993-07-26
申请号：JP23199988
申请日：1988-09-16
申请人： OSAKA TITANIUM , KYUSHU DENSHI KINZOKU KK
发明人： KAJIMOTO TSUTOMU
IPC分类号： C30B15/12 , C30B15/02 , C30B29/06 , H01L21/208

22. 发明专利

JPS63312812A CUTTING METHOD FOR HARD AND BRITTLE MATERIAL 失效
公开(公告)号：JPS63312812A
公开(公告)日：1988-12-21
申请号：JP14975587
申请日：1987-06-16
申请人： SUMITOMO METAL IND , OSAKA TITANIUM , KYUSHU DENSHI KINZOKU KK
发明人： HIROTA TETSUYA , NINOMIYA MASAHARU
IPC分类号： B28D5/02 , B23D47/00 , B23D59/00 , B23D59/02 , B28D5/00
摘要： PURPOSE:To dissolve a bending force acting on a thin plate during cutting and to make no breakage of the cut thin plate, by setting a group of nozzles for injecting gas to one side face or another side face of an inner circumferential blade in accordance with the warp of the rotating inner circumferential blade and dissolving the warp. CONSTITUTION:The warp generated in an inner circumferential blade 3 during cutting is detected by means of a displacement sensor 8 and the detecting sign is input in a warp controlling part 10. In this warp controlling part 10, air pressure injected from a group of nozzles 7L and 7R, set in parallel in the radial direction of the inner circumferential blade 3 to one face or another face of the inner circumferential blade 3 in accordance with the amt. of displacement detected is controlled. A back pressure is acted between the inner circumferential blade 3 and each nozzle by the controlled air pressure injected from this group of nozzles and the inner circumferential blade 3 is sucked to the side of nozzles injecting air. The warp of the inner circumferential blade 3 during cutting is dissolved over its radial direction range by this sucking and the parallelism of a thin plate cut from a material to be cut becomes good and no crack nor scattering of the plates occurs.

23. 发明专利

JPS63256593A APPARATUS FOR GROWING SINGLE CRYSTAL 失效
公开(公告)号：JPS63256593A
公开(公告)日：1988-10-24
申请号：JP9169087
申请日：1987-04-14
申请人： OSAKA TITANIUM , KYUSHU DENSHI KINZOKU KK
发明人： ITO MASATO , KITAURA KIICHIRO , MAKINO HIDEO
IPC分类号： C30B15/00
摘要： PURPOSE:To improve pulling velocity of a single crystal and to prevent mixing of dropped foreign material in a crucible in an apparatus for growing a single crystal by the CZ process by forming a specified shielding member in double layers around a pulling area of the single crystal providing thus a temp. gradient in the pulling direction to the single crystal effectively. CONSTITUTION:An apparatus for growing a single crystal consisting of a crucible 1 for contg. starting materials for the single crystal to be grown, a heating means 2 for melting said starting materials, and a pulling means for pulling the single crystal 4 as it is grown from the melt in the crucible 1, is constituted additionally as described hereunder. Namely, a cylindrical metallic shielding member 8 arranged to above the melt in the crucible 1 around a pulling area of the single crystal 4, and having smaller diameter as it is nearer toward a bottom of the crucible from the upper side, a cooling means 8a provided additionally to the metallic shielding member 8, and a cylindrical shielding member 9 (made of, for example, graphite) arranged with a necessary distance to the outside of the external peripheral surface of the metallic shielding member 8 so as to shield the external peripheral surface from evaporated molten starting material and radiant heat source.

24. 发明专利

JPS63244613A SUSCEPTOR FOR VAPOR GROWTH 失效
公开(公告)号：JPS63244613A
公开(公告)日：1988-10-12
申请号：JP7712487
申请日：1987-03-30
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： MIYAZAKI YASUFUMI
IPC分类号： C30B25/12 , H01L21/205
摘要： PURPOSE:To realize a long life of a by a susceptor by a method wherein a recessed part for accommodation and support is shaped to be of the same size as a wafer and a stepped part to support the wafer by touching only a peripheral part of the wafer is formed at the circumference of the recessed part so that the support stand is etched little without deteriorating the flatness of the wafer. CONSTITUTION:A susceptor 10 used for vapor growth operation has at least one recessed part 11, on its flat plane, whose figure is similar to that of a water, a stepped part 12 which supports the wafer by touching only a peripheral part of the wafer is formed at the inner circumference of the recessed part 11. In addition, a hollow part 14 to produce a vacant space at the rear of the wafer during the accommodation is formed at the inner circumference side of the stepped part 12. By this setup, it is possible to prevent that a raw gas creeps into the vacant space at the rear of the wafer during a vapor growth process; it is also possible to prevent an etching operation at a gap at an orientation flat and a notch; it is possible to mount the orientation flat and the notch in the same position as in previous operations even during a continuous vapor growth process; the flatness of the wafer is deteriorated little.

25. 发明专利

JPS63222435A SEMICONDUCTOR SUBSTRATE HAVING POLYCRYSTALLINE LAYER 失效
公开(公告)号：JPS63222435A
公开(公告)日：1988-09-16
申请号：JP5616087
申请日：1987-03-11
申请人： OSAKA TITANIUM , KYUSHU DENSHI KINZOKU KK
发明人： MASUTANI HIROSHI
IPC分类号： H01L21/322 , H01L21/208
摘要： PURPOSE:To obtain a product at a low cost, by providing a semiconductor single crystal layer of P-type, N-type or I-type, providing a semiconductor polycrystalline layer on one surface of the single crystal layer, specifying the value of the thickness of the polycrystalline layer, and imparting a uniform gettering effect to the entire polycrystalline layer. CONSTITUTION:A P-type, N-type or I-type semiconductor single crystal layer 11 is provided. A semiconductor polycrystalline layer 12 is provided on one surface of the single crystal layer 11. The thickness of the polycrystalline layer 12 is made to be 10 microns or more. Then, gettering effect of oxygen by doping is added in addition to gettering effect with the polycrystalline layer 12, and the single crystal layer 11 is reinforced. Such a distinctive effect of the polycrystalline layer 12 is sufficiently displayed. Accordingly the product is obtained at a low cost.

26. 发明专利

JPS63185032A ETCHING APPARATUS FOR SILICON SUBSTRATE 失效
公开(公告)号：JPS63185032A
公开(公告)日：1988-07-30
申请号：JP1701487
申请日：1987-01-27
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： NONAKA TSUTOMU
IPC分类号： H01L21/306
摘要： PURPOSE:To make it possible to perform reaction treatment corresponding to silicon substrates and to reduce dispersion in parallelism, by providing a holder, which supports a plurality of the silicon substrates so that the substrates can be rotated, and providing a liquid-flow providing means in a reaction bath containing etching liquid. CONSTITUTION:The temperature of etching liquid 14 is controlled by means of a heat exchanger 25. The liquid 14 is pressed into a reaction bath 11 with a plurality of pumps 19. In etching work, a dummy wafer is etched, and parallelism is measured with an interference-fringe measuring instrument. A variable- flow-rate valve 24 is adjusted so that an adequate flow rate is obtained. Namely, the amount of the etching liquid 14 corresponding to the parallelism of a plurality of silicon substrates 15 is jet into the reaction bath 11. Meanwhile, a holder 13, which holds a plurality of the silicon substrates 15, is rotated at the number of rotation that does not disturb the flow of the liquid. Thus the silicon substrates 15 are contacted with the flowing etching liquid 14 and undergo reaction treatment. The liquid, which is injected into the reaction bath 11, overflows and returns to a well 18 through a returning pipe 23.

27. 发明专利

JPS6386525A DEVICE FOR ETCHING SEMICONDUCTOR SILICON WAFER 失效
公开(公告)号：JPS6386525A
公开(公告)日：1988-04-16
申请号：JP23258686
申请日：1986-09-30
申请人： KYUSHU DENSHI KINZOKU KK
发明人： HARAGUCHI NOBUYUKI
IPC分类号： H01L21/306
摘要： PURPOSE:To prevent the generation of clouding, irregularity of etching and irregularity of flatness by a method wherein microscopic bubbles are generated in a mixed acid solution, and the mixed acid solution is stirred up. CONSTITUTION:Mixed acid solution, which is an etchant, is filled up a reaction bath 1, the flow rate of air is set at 2.0 kg/cm (50l/min.) or thereabout, and microscopic bubbles 8 are generated by an air nozzle 3. Also, a silicon wafer A is supported by a wafer supporting tool 7, they are dipped into a mixed acid solution, a reciprocatory movement is performed in the reaction bath 1 while the wafer A is being rotated. The average value of occupation rate of 0.18 mu which is very approximate to zero is obtained, and the standard deviation can be made small to 0.46. Also, when treated silicon wafer is visually inspected, a cloud and a non-uniformity of etching are not observed at all.

28. 发明专利

JPS6369791A DUPLEX CRUCIBLE 失效
公开(公告)号：JPS6369791A
公开(公告)日：1988-03-29
申请号：JP21346886
申请日：1986-09-09
申请人： OSAKA TITANIUM , KYUSHU DENSHI KINZOKU KK
发明人： MAKINO HIDEO
IPC分类号： C30B15/10
摘要： PURPOSE:To produce a crystal at a high rate under constant crystal growth conditions, by using the title duplex crucible wherein the outer crucible can be vertically separated into plural parts to pull up the crystal, and preventing the growth of solidified silicon. CONSTITUTION:The inner crucible 3 for storing a melt 2 is made of quartz. The outer crucible 4 is made of graphite, ceramics, etc., and can be vertically separated into plural parts, for example an upper barrel 6 and a lower bowl 7. A material having lower heat conductivity than that of the lower part 7 is used for the upper part 6, and a spacer 8 having low heat conductivity is provided, as required, at the joint between the upper part 6 and the lower part 7 to form the duplex crucible 1. The duplex crucible 1 is then supported by a crucible shaft 5, which is rotatable and vertically movable, and the raw material melt 2 is charged into the crucible, heated through a heat insulating cylinder 10 and a heater 9, and melted. A silicon single crystal 13 is pulled up by a lifting shaft 14, a decrease in the temp. of the melt 2 is prevented by the upper part 6 of the outer crucible 4 having low heat conductivity and the spacer 8, and the single crystal 13 is grown without being decelerated under the constant conditions.

29. 发明专利

JPS6340795A VAPOR GROWTH DEVICE 失效
公开(公告)号：JPS6340795A
公开(公告)日：1988-02-22
申请号：JP18453786
申请日：1986-08-05
申请人： KYUSHU DENSHI KINZOKU KK
发明人： ISHIKAWA TSUGIO , OKUMURA KAZUHIRO
IPC分类号： C30B25/10 , C23C16/44 , H01L21/205
摘要： PURPOSE:To form a semiconductor thin film having uniform thickness on the surface of a substrate by utilizing the radiant heat from the substrate to uniformize the temp. distribution of the substrate in the title device for forming a semiconductor thin film on the surface of a substrate by a vapor-phase reaction. CONSTITUTION:A the substrate 4 is placed on the susceptor 3 in a quartz bell jar 5 and rotated by a rotating shaft 2. The susceptor 3 and the substrate 4 are heated by a high-frequency induction heating coil 8 below the susceptor. A raw gas is simultaneously supplied from a gas inlet 6, and a semiconductor thin film is formed on the substrate 4 by a chemical reaction. In this case, a stainless steel bell jar 10 for circulating a refrigerant is provided on the outside of the bell jar 5. The inner peripheral surface of the top part of the metallic bell jar 10 is made spherical 11 to uniformly reflect the radiant heat from the susceptor 3 and the substrate 4 onto the surface of the substrate 4, hence the temp. distribution on the front and rear surfaces of the substrate 4 is uniformized, and a semiconductor thin film having uniform thickness and without any crystallographical slippage is formed on the substrate 4.

30. 发明专利

JPS6326466A SEAL DEVICE FOR ROTARY MACHINE 失效
公开(公告)号：JPS6326466A
公开(公告)日：1988-02-04
申请号：JP16765386
申请日：1986-07-16
申请人： KYUSHU DENSHI KINZOKU KK
发明人： HORIE DAIZO , FUJIMORI TAKEHITO
IPC分类号： F16J15/40
摘要： PURPOSE:To shut off an atmosphere of chemicals, by providing a fixed table with a ring-shaped water vessel to which a lower edge of a cylindrical sword guard of a rotary shaft is fitted and supplying inactive liquid into the vessel from the outside. CONSTITUTION:A rotary shaft 1 is provided with a sword guard 4 having an opening opened downwardly and a fixed table 2 is provided with a ring-shaped water vessel 5 to which a lower edge of the sward guard 4 is fitted. The water vessel having an inner circumferential wall 8 higher than an outer circumferential wall 9 is provided with a water supply port 10 for supplying inactive liquid 11 into the vessel 5 from the outside, the liquid flowing out over the outer circumferential wall 9. With the arrangement, PH in the vessel does not change and no heat is produced, whereby an atmosphere of chemicals can be perfectly shut off.

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