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1. 发明专利

JPH07118473B2 失效
公开(公告)号：JPH07118473B2
公开(公告)日：1995-12-18
申请号：JP17571487
申请日：1987-07-14
申请人： KYUSHU DENSHI KINZOKU KK , SUMITOMO SHICHITSUKUSU KK
发明人： KIZAKI KAZUNORI , NINOMYA MASAHARU , YOSHIHARU TETSUJIRO
IPC分类号： H01L21/304

2. 发明专利

JPH0617279B2 失效
公开(公告)号：JPH0617279B2
公开(公告)日：1994-03-09
申请号：JP937289
申请日：1989-01-17
申请人： SUMITOMO SHICHITSUKUSU KK , KYUSHU DENSHI KINZOKU KK
发明人： KIJIMA YASUYOSHI , HAMAMOTO TOSHIJI
IPC分类号： C30B15/02

3. 发明专利

JPH0577182B2 失效
公开(公告)号：JPH0577182B2
公开(公告)日：1993-10-26
申请号：JP2242186
申请日：1986-02-04
申请人： DAISO CO LTD , KYUSHU DENSHI KINZOKU KK
发明人： HATANO ATSUSHI , FUNABASHI NOBUHIKO , MYAJI SEIJI
IPC分类号： H01L21/683 , B23Q3/08 , H01L21/027 , H01L21/67 , H01L21/68

4. 发明专利

JPH0573344B2 失效
公开(公告)号：JPH0573344B2
公开(公告)日：1993-10-14
申请号：JP19417587
申请日：1987-08-03
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： MYAZAKI MORIMASA , HORAI MASATAKA
IPC分类号： H01L21/66 , G01R31/26

5. 发明专利

JPH0565477B1 失效
公开(公告)号：JPH0565477B1
公开(公告)日：1993-09-17
申请号：JP13203486
申请日：1986-06-06
申请人： KYUSHU DENSHI KINZOKU KK
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B15/00 , C30B15/30 , H01L21/18 , H01L21/208

6. 发明专利

JPH052489B2 失效
公开(公告)号：JPH052489B2
公开(公告)日：1993-01-12
申请号：JP26910687
申请日：1987-10-23
申请人： SUMITOMO KINZOKU KOGYO KK , OOSAKA CHITANIUMU SEIZO KK , KYUSHU DENSHI KINZOKU KK
发明人： HIROTA TETSUYA , NINOMYA MASAHARU
IPC分类号： B23D47/00 , B23D59/00 , B23D59/02 , B24B27/06 , B28D5/00 , B28D5/02 , B28D7/02

7. 发明专利

JPH0471871B2 失效
公开(公告)号：JPH0471871B2
公开(公告)日：1992-11-16
申请号：JP7457783
申请日：1983-04-26
申请人： KYUSHU DENSHI KINZOKU KK
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B13/18 , C30B15/10 , C30B15/14 , C30B15/16

8. 发明专利

JPH0416436B2 失效
公开(公告)号：JPH0416436B2
公开(公告)日：1992-03-24
申请号：JP16269386
申请日：1986-07-10
申请人： OOSAKA CHITANIUMU SEIZO KK , KYUSHU DENSHI KINZOKU KK
发明人： MAKINO HIDEO
IPC分类号： C30B15/26 , H01L21/18 , H01L21/208

9. 发明专利

JPS63310123A SILICON SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS63310123A
公开(公告)日：1988-12-19
申请号：JP14630987
申请日：1987-06-12
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： HIRAMOTO KAZUO
IPC分类号： H01L21/322
摘要： PURPOSE:To maintain a gettering effect and, at the same time, to prevent a silicon particle from being exfoliated or from falling off by a method wherein a silicon layer or a silicon nitride layer is formed on the surface of a partially destroyed layer which has been formed mechanically or thermally on one face of a substrate. CONSTITUTION:After a mechanically or thermally partially destryed layer 4 has been formed on one face (the rear) of a semiconductor substrate 1, a silicon layer or a silicon nitride layer 5 is deposited on the rear by a PVD method (a physical vapor deposition method) or a CVD method (a chemical vapor deposition method) such as an evaporation method, a sputtering method or the like, and the surface of the partially destroyed layer 4 is covered. By this setup, while a gettering effect is maintained, it is possible to prevent a silicon particle from being exfoliated or from falling off during a process to manufacture a semiconductor device.

10. 发明专利

JPS63301541A MEASUREMENT OF PATTERN SHIFT 失效
公开(公告)号：JPS63301541A
公开(公告)日：1988-12-08
申请号：JP13543487
申请日：1987-05-31
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： DOI ATSUYUKI , IKUTA AKIO
IPC分类号： H01L21/205 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To enable multiple-point measurements in a silicon substrate surface just after epitaxial growth to be accomplished in one and the same measuring process for the improvement of work efficiency by a method wherein etching is performed for a specified period of time and the difference is determined, on one and the same substrate plane, between the pattern position in a diffusion process and that in the epitaxial growth process. CONSTITUTION:Epitaxial growth is accomplished after diffusion into a silicon substrate. Pattern shift is determined by detecting the difference between the pattern position in the diffusion process and that in the epitaxial growth process. The silicon substrate after the epitaxial growth is subjected to etching for a prescribed period of time and then the difference is determined between the pattern position in the diffusion process and that in the epitaxial growth on one and the same substrate plane. In this way, the pattern shift determining flow is simplified and the time for determination is shortened. A multiplicity of silicon substrate may be simultaneously processed in one etching process and a multi-point measurement in a silicon substrate surface may be accomplished in one and the same measuring process.

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