专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08937014B2 Liquid treatment apparatus and liquid treatment method 有权
标题翻译：液体处理装置及液体处理方法
公开(公告)号：US08937014B2
公开(公告)日：2015-01-20
申请号：US13879175
申请日：2011-08-31
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： H01L21/44 , H01L21/67 , C23C18/16 , H01L21/288
CPC分类号： H01L21/6723 , C23C18/1619 , C23C18/1653 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/50 , H01L21/288
摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.
摘要翻译：在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。

22. 发明申请

US20140331652A1 EXHAUST GAS PURIFICATION DEVICE OF INTERNAL COMBUSTION ENGINE 有权
标题翻译：内燃机排气净化装置
公开(公告)号：US20140331652A1
公开(公告)日：2014-11-13
申请号：US14362444
申请日：2011-12-07
申请人： Hiroshi Tanaka , Yusuke Saito , Takeshi Nobukawa , Masao Watanabe
发明人： Hiroshi Tanaka , Yusuke Saito , Takeshi Nobukawa , Masao Watanabe
IPC分类号： F01N11/00
CPC分类号： F01N11/00 , B01D53/9445 , B01D53/9495 , B01D2255/1025 , B01D2255/2092 , F01N9/00 , F01N11/007 , F01N2430/06 , F01N2550/02 , F01N2900/1602 , F01N2900/1624 , F02D41/123 , F02D2041/0265 , F02D2200/0802 , F02N2200/026 , Y02T10/22 , Y02T10/47
摘要： The invention relates to an exhaust gas purification device of an internal combustion engine comprising a catalyst (45) having an active element and a composite oxidation which carries the active element in an exhaust passage (40), the active element transforming into the composite oxide as a solid solution when the catalyst temperature is higher than or equal to a predetermined solid solution temperature and the atmosphere of the interior of the catalyst is an oxidation atmosphere and the active element precipitating from the composite oxide when the catalyst temperature is higher than or equal to a predetermined precipitation temperature and the atmosphere of the interior of the catalyst is a reduction atmosphere. According to the invention, in case that the performance of the fuel supply stop control is inhibited when the catalyst temperature is higher than or equal to the performance inhibiting temperature, a temperature lower than a base temperature of the performance inhibiting temperature is set as the performance inhibiting temperature while the use degree of the catalyst is lower than or equal to a predetermined degree and in case that the performance of the fuel supply amount increase control is permitted when the catalyst temperature is higher than or equal to a performance permitting temperature, a temperature higher than a base temperature of the performance permitting temperature is set as the performance permitting temperature while the use degree of the catalyst is smaller than or equal to the predetermined degree.
摘要翻译：本发明涉及一种内燃机的废气净化装置，其包括具有活性元素的催化剂（45）和在排气通道（40）中承载活性元素的复合氧化物，活性元素转化为复合氧化物，如催化剂温度高于或等于预定固溶温度时的固溶体，催化剂内部的气氛为氧化气氛，当催化剂温度高于或等于催化剂温度时，活性组分从复合氧化物析出预定的沉淀温度和催化剂内部的气氛是还原气氛。根据本发明，当催化剂温度高于或等于性能抑制温度时，在禁止燃料供给停止控制的性能的情况下，将低于性能抑制温度的基础温度的温度设定为性能在催化剂的使用程度低于或等于预定程度的情况下，并且当催化剂温度高于或等于性能允许温度时允许燃料供给量增加控制的性能的情况下，抑制温度，温度将高于性能允许温度的基础温度设定为性能允许温度，同时催化剂的使用程度小于或等于预定程度。

23. 发明申请

US20140202138A1 EXHAUST GAS PURIFICATION DEVICE FOR INTERNAL COMBUSTION ENGINE 有权
标题翻译：用于内燃机的排气净化装置
公开(公告)号：US20140202138A1
公开(公告)日：2014-07-24
申请号：US14239956
申请日：2011-08-30
申请人： Hiroshi Tanaka , Yusuke Saito
发明人： Hiroshi Tanaka , Yusuke Saito
IPC分类号： F01N3/18
CPC分类号： F01N3/18 , F01N2550/02 , F02D41/0235 , F02D41/123 , F02D41/126 , F02D41/1475 , F02D2200/0802
摘要： The invention relates to an exhaust control device of an engine (10) comprising a catalyst (45) in an exhaust passage (40). In this invention, the active element transforms as a solid solution in the carrier when a catalyst temperature is higher than or equal to a predetermined solid solution temperature and an atmosphere in the catalyst is an oxidation atmosphere and the active element precipitates from the carrier when the catalyst temperature is higher than or equal to a predetermined precipitation temperature and the atmosphere in the catalyst is a reduction atmosphere. According to this invention, an air-fuel ratio of an exhaust gas flowing into the catalyst is controlled to an air-fuel ratio leaner than the stoichiometric air-fuel ratio when the active element solid solution degree is smaller than a target solid solution or a lower limit of a target solid solution degree range and the catalyst temperature is higher than or equal to the predetermined solid solution temperature, and the air-fuel ratio of the exhaust gas flowing into the catalyst is controlled to an air-fuel ratio richer than the stoichiometric air-fuel ratio when the active element solid solution degree is larger than the target solid solution degree or an upper limit of the target solid solution degree range and the catalyst temperature is higher than or equal to the predetermined precipitation temperature.
摘要翻译：本发明涉及一种在排气通道（40）中包括催化剂（45）的发动机（10）的排气控制装置。在本发明中，当催化剂温度高于或等于预定固溶温度时，活性元素作为固溶体转变为载体，催化剂中的气氛为氧化气氛，当活性元素在载体上析出时催化剂温度高于或等于预定的沉淀温度，并且催化剂中的气氛是还原气氛。根据本发明，当活性元素固溶度小于目标固溶体时，流入催化剂的废气的空燃比被控制为比化学计量空燃比更稀的空燃比，或目标固溶度范围的下限和催化剂温度高于或等于预定的固溶温度，并且流入催化剂的废气的空燃比被控制为比当活性元素固溶度大于目标固溶度或目标固溶度范围的上限，催化剂温度高于或等于预定沉淀温度时，化学计量空燃比。

24. 发明申请

US20140120264A1 PLATING APPARATUS, PLATING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：电镀设备，镀层方法和储存介质
公开(公告)号：US20140120264A1
公开(公告)日：2014-05-01
申请号：US14128109
申请日：2012-06-07
申请人： Yuichiro Inatomi , Takashi Tanaka , Osamu Kuroda , Mitsuaki Iwashita , Yusuke Saito
发明人： Yuichiro Inatomi , Takashi Tanaka , Osamu Kuroda , Mitsuaki Iwashita , Yusuke Saito
IPC分类号： B05C11/10
CPC分类号： B05C11/1039 , C23C18/1619 , C23C18/1632 , C23C18/165 , C23C18/168 , C23C18/1682 , C23C18/1683 , C23C18/32
摘要： A plating apparatus 20 has a substrate holding/rotating device 110 configured to hold and rotate a substrate 2 and a plating liquid supplying device 30 configured to supply a plating liquid 35 onto the substrate 2. The plating liquid supplying device 30 has a supply tank 31 configured to store therein the plating liquid 35 to be supplied onto the substrate 2, a discharge nozzle 32 configured to discharge the plating liquid 35 onto the substrate 2 and a plating liquid supplying line 33 through which the plating liquid 35 within the supply tank 31 is supplied into the discharge nozzle 32. Further, an ammonia gas storage unit 170 is connected to the supply tank 31, and a concentration of an ammonia component within the plating liquid 35 stored in the supply tank 31 can be maintained within a preset target range.
摘要翻译：电镀装置20具有：基板保持旋转装置110，被配置为保持和旋转基板2;以及电镀液供给装置30，其被配置为将电镀液体35供给到基板2上。电镀液供给装置30具有供给槽31 被配置为在其中存储供给到基板2上的镀液35，将镀液33排出到基板2上的排出喷嘴32和供给槽31内的镀液35通过该电镀液供给路33 供给到排出喷嘴32.此外，氨气体收容部170与供给罐31连接，能够将储存在供给槽31内的镀液35内的氨成分浓度维持在预先设定的目标范围内。

25. 发明申请

US20120002989A1 IMAGE FORMING APPARATUS 失效
标题翻译：图像形成装置
公开(公告)号：US20120002989A1
公开(公告)日：2012-01-05
申请号：US13169212
申请日：2011-06-27
申请人： Shiro Sakata , Yusuke Saito , Mitsunari Ito
发明人： Shiro Sakata , Yusuke Saito , Mitsunari Ito
IPC分类号： G03G15/02 , G03G15/00
CPC分类号： G03G15/0266
摘要： The image forming apparatus calculates a surface voltage of an image bearing member based on a first charge start voltage, which is obtained when a first voltage application section applies a first DC voltage to a charge section, and a second charge start voltage, which is obtained when a second voltage application section applies a second DC voltage to the charge section. This allows a high-quality image to be formed irrespective of a change in circumstance or drum layer thickness.
摘要翻译：图像形成装置基于当第一电压施加部分向充电部施加第一DC电压时获得的第一充电开始电压和获得的第二充电开始电压来计算图像承载部件的表面电压当第二电压施加部分向充电部施加第二DC电压时。这允许形成高质量的图像，而不管环境或鼓层厚度的变化。

26. 发明申请

US20110278841A1 PIPE JOINT 有权
标题翻译：管接头
公开(公告)号：US20110278841A1
公开(公告)日：2011-11-17
申请号：US13143125
申请日：2010-01-08
申请人： Shigeyuki Joh , Yusuke Saito
发明人： Shigeyuki Joh , Yusuke Saito
IPC分类号： F16L15/04
CPC分类号： F16L41/10 , F16L41/007 , F16L2201/10
摘要： In a pipe joint, a tapered male screw thread is provided at one end and a joint connection section which is connected to a joint section is provided at the other end. The tapered male screw thread has a length adapted so that, when the tapered male screw thread has been fastened to a tapered female screw thread formed in an end cap, the entire length is engaged with the tapered female screw thread, and the sealing effect is obtained by a seal member.
摘要翻译：在管接头中，在一端设有锥形外螺纹，另一端设有与接头部连接的接头连接部。锥形外螺纹的长度适用于当锥形外螺纹已经固定在形成在端盖中的锥形内螺纹时，整个长度与锥形内螺纹接合，密封效果为由密封件获得。

27. 发明申请

US20100075027A1 CAP METAL FORMING METHOD 有权
标题翻译： CAP金属成型方法
公开(公告)号：US20100075027A1
公开(公告)日：2010-03-25
申请号：US12405597
申请日：2009-03-17
申请人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
发明人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
IPC分类号： B05D3/12
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译：提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。

28. 发明授权

US07473567B2 Change rate prediction method, storage medium, and substrate processing system 失效
标题翻译：变化率预测方法，存储介质和基板处理系统
公开(公告)号：US07473567B2
公开(公告)日：2009-01-06
申请号：US11685322
申请日：2007-03-13
申请人： Kazuyuki Mitsuoka , Yusuke Saito , Naoyuki Satoh
发明人： Kazuyuki Mitsuoka , Yusuke Saito , Naoyuki Satoh
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01J2237/304 , H01J2237/3156 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A change rate prediction method according to which there can be eliminated the need for experimentally determining electron beam intensities for making a change rate of a specification value of a predetermined film on a substrate uniform. The distribution of the shrinkage rate of a low-k film on a wafer upon the low-k film being modified is measured while changing the inputted current value inputted to a central electron beam tube of an electron beam irradiating mechanism, the relationship between the inputted current value and the shrinkage rate measured directly below the electron beam tube is calculated, and a dose distribution calculated through simulation is converted into a low-k film shrinkage rate distribution based on the ratio between the inputted current value and the dose and a power curve giving the relationship between the inputted current value and the measured shrinkage rate.
摘要翻译：一种变化率预测方法，其中可以消除实验确定电子束强度的需要，以使基板上的预定膜的规格值的变化率均匀。在改变输入到电子束照射机构的中央电子束管的输入电流值时，测量低k膜被修改时的低k膜在晶片上的收缩率的分布，输入的计算直接在电子束管下方测量的电流值和收缩率，并且通过模拟计算的剂量分布基于输入的电流值与剂量之间的比率和功率曲线被转换为低k膜收缩率分布给出输入的电流值和测量的收缩率之间的关系。

29. 发明申请

US20070231459A1 CHANGE RATE PREDICTION METHOD, STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM 失效
标题翻译：变更速率预测方法，存储介质和基板处理系统
公开(公告)号：US20070231459A1
公开(公告)日：2007-10-04
申请号：US11685322
申请日：2007-03-13
申请人： Kazuyuki MITSUOKA , Yusuke Saito , Naoyuki Satoh
发明人： Kazuyuki MITSUOKA , Yusuke Saito , Naoyuki Satoh
IPC分类号： C23C16/52 , G06F19/00
CPC分类号： H01L22/20 , H01J2237/304 , H01J2237/3156 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A change rate prediction method according to which there can be eliminated the need for experimentally determining electron beam intensities for making a change rate of a specification value of a predetermined film on a substrate uniform. The distribution of the shrinkage rate of a low-k film on a wafer upon the low-k film being modified is measured while changing the inputted current value inputted to a central electron beam tube of an electron beam irradiating mechanism, the relationship between the inputted current value and the shrinkage rate measured directly below the electron beam tube is calculated, and a dose distribution calculated through simulation is converted into a low-k film shrinkage rate distribution based on the ratio between the inputted current value and the dose and a power curve giving the relationship between the inputted current value and the measured shrinkage rate.
摘要翻译：一种变化率预测方法，其中可以消除实验确定电子束强度的需要，以使基板上的预定膜的规格值的变化率均匀。在改变输入到电子束照射机构的中央电子束管的输入电流值时，测量低k膜被修改时的低k膜在晶片上的收缩率的分布，输入的计算直接在电子束管下方测量的电流值和收缩率，并且通过模拟计算的剂量分布基于输入的电流值与剂量之间的比率和功率曲线被转换为低k膜收缩率分布给出输入的电流值和测量的收缩率之间的关系。

30. 发明申请

US20070126158A1 Method of cleaning polymeric mold 审中-公开
标题翻译：清洗聚合物模具的方法
公开(公告)号：US20070126158A1
公开(公告)日：2007-06-07
申请号：US11296715
申请日：2005-12-01
申请人： Yusuke Saito , Yorinobu Takamatsu , Hiroshi Kikuchi , Akira Yoda , Toru Aoki
发明人： Yusuke Saito , Yorinobu Takamatsu , Hiroshi Kikuchi , Akira Yoda , Toru Aoki
IPC分类号： C08J5/00
CPC分类号： B29C33/72 , B08B7/0014 , B29C33/40 , B29C33/424 , B29C35/0888 , B29C37/0053 , B29C2035/0827 , B29L2031/3475 , H01J9/244 , H01J2211/36
摘要： The present invention relates to methods of cleaning microstructured molds and methods of making microstructures (e.g. barrier ribs).
摘要翻译：本发明涉及清洁微结构模具的方法和制造微结构（例如隔壁）的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式