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1. 发明申请

US20110214694A1 SUPERCRITICAL PROCESSING APPARATUS AND SUPERCRITICAL PROCESSING METHOD 有权
标题翻译：超临界加工设备和超临界加工方法
公开(公告)号：US20110214694A1
公开(公告)日：2011-09-08
申请号：US13039361
申请日：2011-03-03
申请人： Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Hidekazu OKAMOTO , Hideo NAMATSU
发明人： Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Hidekazu OKAMOTO , Hideo NAMATSU
IPC分类号： B08B5/00 , B08B13/00
CPC分类号： B08B5/00 , B08B13/00
摘要： Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.
摘要翻译：公开了一种超临界处理装置和超临界处理方法，用于抑制图案坍塌或将构成处理液的材料注入基板。处理室接受用超临界流体处理的基板，液体供给单元向处理室供给包含氟化合物的处理液。液体排出单元从处理室排出超临界流体，热解成分除去单元去除促进来自处理室的液体的热分解或从液体供应单元供应的液体的热分解，加热单元加热处理包括氟氟醚或氢氟碳的氟化合物的液体。

2. 发明申请

US20110000512A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20110000512A1
公开(公告)日：2011-01-06
申请号：US12824565
申请日：2010-06-28
申请人： Takayuki TOSHIMA , Kazuo TERADA , Kazuyuki HONDA
发明人： Takayuki TOSHIMA , Kazuo TERADA , Kazuyuki HONDA
IPC分类号： B08B3/00
CPC分类号： B08B3/10 , H01L21/67057 , H01L21/67751 , Y10S134/902
摘要： Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.
摘要翻译：提供了一种基板处理装置和基板处理方法，其能够使用超临界流体处理基板，而不将形成在基板上的图案暴露于大气环境。基板处理装置包括：清洗槽，其配置为容纳基板并通过流动清洁溶液清洁基板;以及处理容器，其构造成容纳清洗槽并用超临界流体处理基板。

3. 发明授权

US07793610B2 Liquid processing apparatus 有权
标题翻译：液体处理设备
公开(公告)号：US07793610B2
公开(公告)日：2010-09-14
申请号：US11785352
申请日：2007-04-17
申请人： Masami Akimoto , Takayuki Toshima , Satoshi Kaneko , Kazuhisa Matsumoto , Norihiro Ito , Hiromitsu Nanba
发明人： Masami Akimoto , Takayuki Toshima , Satoshi Kaneko , Kazuhisa Matsumoto , Norihiro Ito , Hiromitsu Nanba
IPC分类号： B05C13/02
CPC分类号： H01L21/67051 , H01L21/6715 , H01L21/68728
摘要： A liquid processing apparatus includes: a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate held on the substrate holding member and to rotate along with the substrate; a rotation mechanism configured to integratedly rotate the rotary cup and the substrate holding member; a liquid supply mechanism configured to supply a process liquid onto the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining of the rotary cup. The exhaust/drain section includes an annular drain cup configured to mainly collect and discharge a process liquid thrown off from the substrate, and an exhaust cup surrounding the drain cup and configured to mainly collect and discharge a gas component from inside and around the rotary cup. Liquid-draining from the drain cup and gas-exhausting from the exhaust cup are performed independently of each other.
摘要翻译：一种液体处理装置，包括：基板保持部件，其构造成与水平状态下保持的基板一起旋转; 旋转杯，其构造成围绕保持在所述基板保持构件上并与所述基板一起旋转的所述基板; 旋转机构，其构造成使所述旋转杯和所述基板保持部件一体地旋转; 液体供给机构，其构造成将处理液体供给到所述基板上; 以及排气/排出部，其构造成进行所述旋转杯的排气和排液。排气/排放部分包括环形排水杯，其构造成主要收集和排出从基板排出的处理液体，以及围绕排水杯的排气杯，并且构造成主要从旋转杯内部和周围收集和排出气体成分。从排水杯排出液体并从排气杯排出气体彼此独立地进行。

4. 发明申请

US20100192992A1 SUBSTRATE CARRYING APPARATUS AND SUBSTRATE PROCESSING SYSTEM 失效
标题翻译：基板承载装置和基板处理系统
公开(公告)号：US20100192992A1
公开(公告)日：2010-08-05
申请号：US12698455
申请日：2010-02-02
申请人： Takayuki TOSHIMA , Kazuo TERADA
发明人： Takayuki TOSHIMA , Kazuo TERADA
IPC分类号： B08B3/00 , H01L21/673 , H01L21/677
CPC分类号： H01L21/67057 , H01L21/67034 , H01L21/67346 , H01L21/67748 , H01L21/68742
摘要： Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.
摘要翻译：公开了具有能够抑制图案塌陷的发生的简单结构的基板输送装置。所公开的基板承载装置的承载托盘包括用于支撑基板的底板和围绕底板设置的周向侧壁。在底板上形成开口。升降构件，要从基板转移到其上并通过该开口。暂时在搬运托盘中形成空间。开口内的升降构件通过该空间传递到搬运托盘的外部。当承载基板时，液体被储存在承载托盘内，并且在液体保留在基板的上表面上的同时承载基板。

5. 发明申请

US20100075027A1 CAP METAL FORMING METHOD 有权
标题翻译： CAP金属成型方法
公开(公告)号：US20100075027A1
公开(公告)日：2010-03-25
申请号：US12405597
申请日：2009-03-17
申请人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
发明人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
IPC分类号： B05D3/12
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译：提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。

6. 发明申请

US20090179007A1 LIQUID TREATMENT METHOD AND STORAGE SYSTEM 有权
标题翻译：液体处理方法和储存系统
公开(公告)号：US20090179007A1
公开(公告)日：2009-07-16
申请号：US12403286
申请日：2009-03-12
申请人： Kotaro TSURUSAKI , Hiroshi TANAKA , Takayuki TOSHIMA , Kazuyoshi ESHIMA
发明人： Kotaro TSURUSAKI , Hiroshi TANAKA , Takayuki TOSHIMA , Kazuyoshi ESHIMA
IPC分类号： B44C1/22
CPC分类号： H01L21/67086 , H01L21/6708
摘要： A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.
摘要翻译：多个处理液供给喷嘴10在处理槽1中的半导体晶片W的左右两侧以不同的水平配置。各喷嘴10的排出口朝向半导体晶片W.按照从多个喷嘴10中选择的一个以上的喷嘴10排出处理液。为了进行药液处理，例如从最下面的喷嘴10喷出化学液，之后，喷嘴 10上方依次排出化学液体。为了通过用冲洗液更换处理槽1中的化学液体进行冲洗液处理，首先例如从最下面的喷嘴10排出冲洗液。此后，冲洗液体从所有喷嘴10排出。这样可以提高液体处理的效率和均匀性。

7. 发明申请

US20090139656A1 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US20090139656A1
公开(公告)日：2009-06-04
申请号：US12292947
申请日：2008-12-01
申请人： Koukichi Hiroshiro , Hideyuki Yamamoto , Kazuhiro Takeshita , Takayuki Toshima
发明人： Koukichi Hiroshiro , Hideyuki Yamamoto , Kazuhiro Takeshita , Takayuki Toshima
IPC分类号： H01L21/306
CPC分类号： H01L21/67057
摘要： The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.
摘要翻译：本发明提供一种基板处理装置，用于通过将基板浸入处理液中来处理基板。该基板处理装置具备：处理槽，具有配置成彼此相对的一对侧壁; 以及分别对应于一对侧壁设置的一对处理液供给机构。一对处理液供给机构分别构成为将处理液朝向连接该一对侧壁的宽度方向的处理槽的中央部供给，从而在处理液的中央区域产生上升的流动处理槽的宽度方向。一对侧壁的每个内壁面包括主体，位于主体上方的突出部分和位于最上方的排出引导部分，并且设置用于允许处理液体溢出的排出口。排出引导部分在宽度方向上与中心部分相反地向上倾斜。与主体和排出引导部相比，突出部包括位于宽度方向上更接近中央部的内端部。

8. 发明申请

US20070240638A1 Liquid processing apparatus 有权
标题翻译：液体处理设备
公开(公告)号：US20070240638A1
公开(公告)日：2007-10-18
申请号：US11785352
申请日：2007-04-17
申请人： Masami Akimoto , Takayuki Toshima , Satoshi Kaneko , Kazuhisa Matsumoto , Norihiro Ito , Hiromitsu Nanba
发明人： Masami Akimoto , Takayuki Toshima , Satoshi Kaneko , Kazuhisa Matsumoto , Norihiro Ito , Hiromitsu Nanba
IPC分类号： B05C11/02 , B05C5/00 , B05B1/28
CPC分类号： H01L21/67051 , H01L21/6715 , H01L21/68728
摘要： A liquid processing apparatus includes: a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate held on the substrate holding member and to rotate along with the substrate; a rotation mechanism configured to integratedly rotate the rotary cup and the substrate holding member; a liquid supply mechanism configured to supply a process liquid onto the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining of the rotary cup. The exhaust/drain section includes an annular drain cup configured to mainly collect and discharge a process liquid thrown off from the substrate, and an exhaust cup surrounding the drain cup and configured to mainly collect and discharge a gas component from inside and around the rotary cup. Liquid-draining from the drain cup and gas-exhausting from the exhaust cup are performed independently of each other.
摘要翻译：一种液体处理装置，包括：基板保持部件，其构造成与水平状态下保持的基板一起旋转; 旋转杯，其构造成围绕保持在所述基板保持构件上并与所述基板一起旋转的所述基板; 旋转机构，其构造成使所述旋转杯和所述基板保持部件一体地旋转; 液体供给机构，其构造成将处理液体供给到所述基板上; 以及排气/排出部，其构造成进行所述旋转杯的排气和排液。排气/排放部分包括环形排水杯，其构造成主要收集和排出从基板排出的处理液体，以及围绕排水杯的排气杯，并且构造成主要从旋转杯内部和周围收集和排出气体成分。从排水杯排出液体并从排气杯排出气体彼此独立地进行。

9. 发明申请

US20070128373A1 Electroless plating apparatus and electroless plating method 审中-公开
标题翻译：无电镀设备和化学镀方法
公开(公告)号：US20070128373A1
公开(公告)日：2007-06-07
申请号：US11606158
申请日：2006-11-30
申请人： Kenichi Hara , Mitsuaki Iwashita , Takehiko Orii , Takayuki Toshima
发明人： Kenichi Hara , Mitsuaki Iwashita , Takehiko Orii , Takayuki Toshima
IPC分类号： B05D5/12 , B05D3/04 , B05D1/18 , B05C11/00 , B05B3/00
CPC分类号： H01L21/6723 , C23C18/1628 , C23C18/1676 , C23C18/168 , H01L21/6708 , H01L21/67109 , H01L21/67248
摘要： An electroless plating apparatus which supplies a plating solution to a top surface of a substrate to effect electroless plating, comprises a substrate support section which supports a substrate, a plating-solution retaining section which retains the plating solution to be supplied to the top surface of the substrate, a plating-solution feeding pipe which guides the plating solution from the plating-solution retaining section to the top surface of the substrate supported by the substrate support section, a plating-solution temperature controlling mechanism which controls a temperature of the plating solution flowing in the plating-solution feeding pipe, and a suction mechanism which sucks the plating solution in the plating-solution feeding pipe toward the plating-solution retaining section when feeding of the plating solution to the top surface of the substrate through the plating-solution feeding pipe is stopped.
摘要翻译：向基板的上表面供给电镀液的无电解电镀装置包括：支撑基板的基板支撑部，保持要供给到基板的上表面的电镀液的电镀液保持部; 基板，将电镀液从电镀液保持部引导到由基板支撑部支撑的基板的上表面的电镀液供给管，控制电镀液的温度的电镀液温度控制机构在电镀溶液供给管中流动的吸附机构，在将电镀液通过电镀液供给到基板的上表面时，将电镀液供给管内的电镀液吸附到电镀液保持部的吸引机构进料管停止。

10. 发明授权

US07191785B2 Substrate processing apparatus for resist film removal 有权
公开(公告)号：US07191785B2
公开(公告)日：2007-03-20
申请号：US10606135
申请日：2003-06-25
申请人： Takayuki Toshima , Kinya Ueno , Miyako Yamasaka , Hideyuki Tsutsumi , Tadashi Iino , Yuji Kamikawa
发明人： Takayuki Toshima , Kinya Ueno , Miyako Yamasaka , Hideyuki Tsutsumi , Tadashi Iino , Yuji Kamikawa
IPC分类号： B08B3/10
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

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