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21. 发明公开

EP1810352A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF 有权
标题翻译：制造方法的发光氮化物半导体装置
公开(公告)号：EP1810352A1
公开(公告)日：2007-07-25
申请号：EP05820555.0
申请日：2005-11-04
申请人： LG Innotek Co., Ltd.
发明人： YANG, Seung, Huyn
IPC分类号： H01L33/00 , H01S5/30
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/02436 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/06 , H01S5/0213 , H01S5/34333 , H01S5/34346 , H01S5/34386 , H01S2301/04
摘要： A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.

22. 发明公开

EP1265326A4 GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：具有产生增益和功率和过程DFB半导体激光元件
公开(公告)号：EP1265326A4
公开(公告)日：2005-12-07
申请号：EP01902789
申请日：2001-02-07
申请人： SHARP KK
发明人： TAKAHASHI KOJI
IPC分类号： H01S5/12 , H01S5/22 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/1231 , H01S5/3202 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/3432 , H01S5/3434 , H01S5/34346 , H01S5/3438
摘要： The presence/absence and the intensity of a refractive index distribution are controlled easily and reproducibly without depending on a machining precision. InGaAs well layers (14a), (14b) small in forbidden band width and high in refractive index are surrounded by a lower barrier layer (13), an intermediate barrier layer (15), an upper barrier layer (16) and a buried layer (18) that have large forbidden band widths and are made from a GaAsN material. The presence/absence and the intensity of a refractive index distribution are controlled by adjusting the nitrogen mixed crystal ratio of a GaAsN material constituting the barrier layers (13), (15), (16) and the buried layer (18). Accordingly, the distribution of a refractive index is controlled easily and reproducibly without allowing for the shape of a diffraction grating (17) and a balance in refractive index with respect to the buried layer (18), that is, without depending on a machining precision.

23. 发明公开

EP1291989A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND OPTICAL APPARATUS INCLUDING THE SAME 有权
标题翻译：发光NITRIDE半导体元件和光学装置，其
公开(公告)号：EP1291989A1
公开(公告)日：2003-03-12
申请号：EP01926138.7
申请日：2001-05-07
申请人： Sharp Kabushiki Kaisha
发明人： TSUDA, Yuhzoh , YUASA, Takayuki , ITO, Shigetoshi
IPC分类号： H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/00 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/3434 , H01S5/34346
摘要： A nitride semiconductor light emitting device includes an emission layer (106) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XN 1-x-y-z As x P y Sb z (0≤x≤0.15, 0≤y≤0.2, 0≤z≤0.05, x+y+z>0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al.

24. 发明公开

EP3361584A1 VERTICAL CAVITY LIGHT EMITTING ELEMENT 审中-公开
公开(公告)号：EP3361584A1
公开(公告)日：2018-08-15
申请号：EP18155124.3
申请日：2018-02-05
申请人： STANLEY ELECTRIC CO., LTD.
发明人： TAZAWA, Komei , LIANG, Ji-Hao , KOBAYASHI, Seiichiro
IPC分类号： H01S5/183 , H01S5/343 , H01S5/20 , H01L33/10 , H01L33/32 , H01S5/042 , H01L33/00
CPC分类号： H01S5/2205 , H01L33/105 , H01S5/0425 , H01S5/183 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18352 , H01S5/18369 , H01S5/2013 , H01S5/3407 , H01S5/34333 , H01S5/34346
摘要： A vertical-cavity light-emitting element includes: a first reflector (13); a semiconductor structure layer including a first semiconductor layer (15), an active layer (17), a second semiconductor layer (18), and a third semiconductor layer (19a) that are sequentially provided on the first reflector; a transparent electrode (23) on the third semiconductor layer; and a second reflector (25) on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film (20) provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer (21) on the insulating film to surround the mesa structure and define a through opening.

25. 发明授权

EP1265326B1 GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：具有产生增益和功率和过程DFB半导体激光元件
公开(公告)号：EP1265326B1
公开(公告)日：2009-05-13
申请号：EP01902789.5
申请日：2001-02-07
申请人： Sharp Kabushiki Kaisha
发明人： TAKAHASHI, Koji
IPC分类号： H01S5/12
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/1231 , H01S5/3202 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/3432 , H01S5/3434 , H01S5/34346 , H01S5/3438
摘要： The presence/absence and the intensity of a refractive index distribution are controlled easily and reproducibly without depending on a machining precision. InGaAs well layers (14a), (14b) small in forbidden band width and high in refractive index are surrounded by a lower barrier layer (13), an intermediate barrier layer (15), an upper barrier layer (16) and a buried layer (18) that have large forbidden band widths and are made from a GaAsN material. The presence/absence and the intensity of a refractive index distribution are controlled by adjusting the nitrogen mixed crystal ratio of a GaAsN material constituting the barrier layers (13), (15), (16) and the buried layer (18). Accordingly, the distribution of a refractive index is controlled easily and reproducibly without allowing for the shape of a diffraction grating (17) and a balance in refractive index with respect to the buried layer (18), that is, without depending on a machining precision.

26. 发明公开

EP1875569A2 NEW OPTICAL DEVICES USING A PENTERNARY III-V MATERIAL SYSTEM 审中-公开
标题翻译： WITH APENTERNÄRENIII-V材料系统的新的光学器件
公开(公告)号：EP1875569A2
公开(公告)日：2008-01-09
申请号：EP06733098.5
申请日：2006-03-30
申请人： Intopto A/S
发明人： BUGGE, Renato
IPC分类号： H01S5/323 , H01S5/343 , H01S5/10 , G02B6/125 , H01S5/22 , G02B6/12
CPC分类号： H01S5/22 , B82Y20/00 , G02B6/125 , G02B2006/1215 , G02B2006/12176 , H01S5/10 , H01S5/1003 , H01S5/343 , H01S5/34306 , H01S5/34346
摘要： The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III- V compounds in which one consists of the penternary AlGaInAsSb material. The structure is wet etched in order to form optical ridge waveguides. One such device has incorporated two waveguides which are connected through a new junction design which can be made by wet etching. In one design the junction and waveguides consists of wet etched AlO .90GaO .10AsSb cladding around a core of AlO .28GaO .72AsSb in which an active layer composed of AlO.22InO.22GaO.55AsSb/lnO.29GaO.71AsSb quantum wells is embedded. The resulting device is a erdge junction laser which has single mode emission and emits a narrow line width. We made and tested a device in the 2.34 müm to 2.375 müm wavelength area and found it to have an emission line width of around 0, 5nm .

27. 发明公开

EP1335434A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND OPTICAL DEVICE CONTAINING IT 审中-公开
标题翻译：非洲红十字国际委员会（NITRIDHALBLEITER-LICHTEMISSIONSELEMENT UND OPTISCHE EINRICHTUNG DAMIT）
公开(公告)号：EP1335434A1
公开(公告)日：2003-08-13
申请号：EP01965685.9
申请日：2001-09-17
申请人： Sharp Kabushiki Kaisha
发明人： TSUDA, Yuhzoh , ITO, Shigetoshi , ARAKI, Masahiro
IPC分类号： H01L33/00 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/34346
摘要： According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer (106) having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN 1-x-y-z As x P y Sb z (0
摘要翻译：根据本发明的一个方面，氮化物半导体发光器件包括具有量子阱结构的发光层（106），其量子阱层和阻挡层交替层叠。阱层由含有In的氮化物半导体形成，并且阻挡层由含有As，P或Sb的氮化物半导体层形成。根据本发明的另一方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。阱层由GaN1-x-y-zAsxPySbz（0

28. 发明公开

EP1250738A2 HALBLEITERLASERSTRUKTUR 审中-公开
标题翻译：半导体激光器结构
公开(公告)号：EP1250738A2
公开(公告)日：2002-10-23
申请号：EP00993790.5
申请日：2000-12-04
申请人： Infineon Technologies AG
发明人： RIECHERT, Henning , EGOROV, Anton Yurevitch
IPC分类号： H01S5/343
CPC分类号： H01S5/343 , B82Y20/00 , H01S5/32366 , H01S5/32375 , H01S5/34346 , H01S5/34353
摘要： The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of Inx Ga1-x Asy N1-y with varying factors x and y, where, in particular, x = 0 and y = 1.

29. 发明专利

NO20051589A 未知
公开(公告)号：NO20051589A
公开(公告)日：2006-10-02
申请号：NO20051589
申请日：2005-03-30
申请人： INTOPTO AS
发明人： BUGGE RENATO
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/136 , H01L20060101 , H01S5/10 , H01S5/22 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , G02B6/125 , G02B2006/1215 , G02B2006/12176 , H01S5/10 , H01S5/1003 , H01S5/343 , H01S5/34306 , H01S5/34346

30. 发明申请

WO2017195502A1 窒化物系発光素子审中-公开
标题翻译：氮化物基发光元件
公开(公告)号：WO2017195502A1
公开(公告)日：2017-11-16
申请号：PCT/JP2017/014061
申请日：2017-04-04
申请人：パナソニックIPマネジメント株式会社
发明人：高山　徹 , 中谷　東吾 , 狩野　隆司 , 左文字　克哉
IPC分类号： H01S5/042 , H01S5/343
CPC分类号： H01S5/34333 , F21S41/16 , F21S41/176 , F21Y2115/30 , H01L33/145 , H01L33/32 , H01S5/2009 , H01S5/22 , H01S5/3054 , H01S5/34346
摘要：窒化物系発光素子は、ＧａＮ基板（１１）上に、第１導電側第１半導体層（１２）、活性層（１５）、第２導電側第１半導体層（１９）を順次備え、活性層（１５）と第２導電側第１半導体層（１９）の間には、少なくともＡｌを含む窒化物系半導体を含む第２導電型の電子障壁層（１８）を備え、電子障壁層（１８）は、Ａｌ組成が変化する第１領域（１８ａ）を有し、第１領域（１８ａ）は、活性層（１５）から第２導電側第１半導体層（１９）に向かう方向に対してＡｌ組成が単調増加しており、第２導電側第１半導体層（１９）における電子障壁層（１８）に近い側の領域（１９ａ）の不純物濃度は、電子障壁層（１８）に遠い側の領域（１９ｂ）の不純物濃度に対して相対的に低い。
摘要翻译：在氮化物基发光器件中，第一导电侧第一半导体层（12），有源层（15），第二导电侧第一半导体层（11） 19）中，在有源层（15）和第二导电侧第一半导体层（19）之间设置包含至少包含Al的氮化物基半导体的第二导电型电子阻挡层（18）其中，第一阻挡层具有其中Al组分变化的第一区域并且第一区域从有源层延伸到第二导电侧第一半导体层，，第二导电侧第一半导体层（19）中靠近电子势垒层（18）一侧的区域（19a）的杂质浓度大于电子势垒层（18）的杂质浓度相对于远离区域（18）的区域（19b）的杂质浓度。

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