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31. 发明公开

EP1079003A3 Electrolytic machining method and apparatus 有权
标题翻译：维尔法赫恩（Vfrichtung zur elektrolytischen）熊贝通
公开(公告)号：EP1079003A3
公开(公告)日：2004-01-21
申请号：EP00118511.5
申请日：2000-08-25
申请人： Mori, Yuzo , EBARA CORPORATION
发明人： Mori, Yuzo , Shirakashi, Mitsuhiko , Saito, Takayuki , Toma, Yasushi , Fukunaga, Akira , Kobata, Itsuki
IPC分类号： C23F3/00 , B23H3/08
CPC分类号： C25F3/00 , B23H3/08
摘要： An anode (2) as a workpiece, and a cathode (1) opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material (3) promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.
摘要翻译：将作为工件的阳极（2）和与阳极相对的具有预定间隔的阴极（1）放置在超纯水中。在工件和阴极之间设置促进超纯水的离解并具有透水性的催化材料（3）。在催化材料内部形成有超纯水的流动，在工件和阴极之间施加电压，将超纯水中的水分子分解为氢离子和氢氧根离子，并将得到的氢氧根离子供给到从而通过化学溶解反应或由氢氧根离子介导的氧化反应进行工件的去除处理或氧化膜形成。因此，可以通过在超纯水中使用氢氧根离子进行清洁处理，在工件的加工表面上不会留下杂质。

32. 发明公开

EP1079003A2 Electrolytic machining method and apparatus 有权
标题翻译：用于电解处理的方法和装置
公开(公告)号：EP1079003A2
公开(公告)日：2001-02-28
申请号：EP00118511.5
申请日：2000-08-25
申请人： Mori, Yuzo , EBARA CORPORATION
发明人： Mori, Yuzo , Shirakashi, Mitsuhiko , Saito, Takayuki , Toma, Yasushi , Fukunaga, Akira , Kobata, Itsuki
IPC分类号： C23F3/00 , B23H3/08
CPC分类号： C25F3/00 , B23H3/08
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

33. 发明授权

EP0300224B2 Strainless precision after-treatment process by radical reaction 失效
标题翻译：通过自由基反应准确无应力后处理工艺
公开(公告)号：EP0300224B2
公开(公告)日：1998-09-30
申请号：EP88110108.3
申请日：1988-06-24
申请人： Mori, Yuzo , UHA MIKAKUTO PRECISION ENGINEERING RESEARCH INSTITUTE Co., Ltd.
发明人： Mori, Yuzo , Yamauchi, Kazuto
IPC分类号： C30B33/00 , B23K26/12
CPC分类号： B28D5/00 , C30B33/00

34. 发明专利

JP2006186186A METHOD FOR FORMING SILICON NITRIDE LAYER 审中-公开
公开(公告)号：JP2006186186A
公开(公告)日：2006-07-13
申请号：JP2004379750
申请日：2004-12-28
申请人： SHARP KK , MORI YUZO
发明人： NAKAHAMA KOJI , MORI YUZO
IPC分类号： H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride layer which can form the silicon nitride layer having high denseness at a high speed. SOLUTION: In the method for forming a silicon nitride layer, plasma is generated from a nitrogen-contained gas flowed into between an electrode 2 and the surface of a silicon wafer 6 at atmospheric pressure or at a pressure close to the atmospheric pressure. Plasma 13 having a temperature gradient is brought into contact with the surface of the silicon wafer 6 to form a silicon nitride layer thereon. The nitrogen-contained gas is preferably a mixture gas of nitrogen and rare gases or a mixture gas of ammonia, rare and hydrogen gasses. COPYRIGHT: (C)2006,JPO&NCIPI

35. 发明专利

JP2003193241A PLASMA CVD FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：JP2003193241A
公开(公告)日：2003-07-09
申请号：JP2001394140
申请日：2001-12-26
申请人： KOBE STEEL LTD , MORI YUZO
发明人： HAYASHI KAZUYUKI , KUGIMIYA TOSHIHIRO , GOTO YASUSHI , KOBAYASHI AKIRA , HOSOKAWA YOSHIYUKI , INOUE KENICHI , MORI YUZO
IPC分类号： C23C16/509
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD film deposition apparatus capable of performing high-speed film deposition on a base material with a large area, and depositing a uniform film. SOLUTION: The plasma CVD film deposition apparatus comprises two or more rollers 22a-22f and 23, a conductive endless belt electrode 21 supported and traveled by these rollers 22a-22f and 23, a base material holding means 5 to hold the base material 4 to be film-deposited at the position facing a part of the belt electrode 21, and a plasma generating means to generate plasma P in a space between the belt electrode 21 and the base material 4. The two or more rollers 22a-22f and 23 are provided so that the radius of curvature of the belt electrode 21 in a plasma generating area P is larger than the radius of the rollers 22a-22f and 23. COPYRIGHT: (C)2003,JPO

36. 发明专利

JP2002220674A PLASMA CVD APPARATUS 失效
公开(公告)号：JP2002220674A
公开(公告)日：2002-08-09
申请号：JP2001017359
申请日：2001-01-25
申请人： KOBE STEEL LTD , MORI YUZO
发明人： INOUE KENICHI , NAKAGAMI AKIMITSU , ISHIBASHI KIYOTAKA , HAYASHI KAZUYUKI , KUGIMIYA TOSHIHIRO , GOTO YASUSHI , MORI YUZO
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can improve a temperature of a base material near a rotating electrode. SOLUTION: The plasma CVD apparatus for treating the surface of a substrate 5, with plasma generated between the rotating electrode 10 and the substrate 5, along with transferring the substrate 5 so as to pass by a cylindrical rotating electrode 10 which is rotatably arranged inside a reactive vessel 1 to which source gas is fed, comprises an electrode layer 13 arranged on an outer surface layer of the rotating electrode 10, and an electromagnetic induction heating means (electromagnetic induction coils 27 and 28, a rotation axis 11 all made of a ferromagnetism material, bearings 22 and 23, adapter plates 25 and 26, and a supporting member 24) for heating an electrode layer 13 by eddy-current generated in the electrode layer 13.

37. 发明专利

JP2001213613A OZONE GENERATING APPARATUS 失效
公开(公告)号：JP2001213613A
公开(公告)日：2001-08-07
申请号：JP2000018944
申请日：2000-01-27
申请人： KOBE STEEL LTD , MORI YUZO
发明人： YOKOTA YOSHIHIRO , KOBAYASHI AKIRA , INOUE KENICHI , ASAHARA KAZUHIKO , TANIOKA TAKASHI , MORI YUZO
IPC分类号： C01B13/11
摘要： PROBLEM TO BE SOLVED: To provide an ozone generating apparatus which can generate ozone more efficiently. SOLUTION: In this ozone generating apparatus generating ozone by introducing oxygen containing gas into the electric discharging area, a pair of roller electrode 3 and 4 are built with a specified gap x which can rotate each around the own axis and to the opposite direction to each other; the apparatus is provided with an electric source to apply to the roller electrodes 3 and 4 a voltage of direct or alternating current making an electric discharge at the specified gap as the electric discharging area, with a gas inlet 10 and a nozzle 11 to introduce gas into the specified gap from the flank side of the roller electrodes 3 and 4, with a funnel 12 to collect ozone discharged toward downstream of gas from the specified gap by the rotation of the roller electrodes, and with a gas outlet 13.

38. 发明专利

JP2001044180A ULTRA PRECISE PROCESSING METHOD BY PLASMA AND DEVICE THEREOF 失效
公开(公告)号：JP2001044180A
公开(公告)日：2001-02-16
申请号：JP21934899
申请日：1999-08-02
申请人： SHARP KK , MORI YUZO
发明人： EHATA YUSUKE , OKUDA TORU , MORI YUZO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an ultra precise processing method using plasma which can process the surface of a work with high efficiency. SOLUTION: A precise processing method, which processes a work arranged in a first reactive gas atmosphere using plasma, includes the first step of forming a wall face opposed to a work J so that a passage of low inductance for reactive gas is constituted and supplying the reactive gas to the passage of low conductance and making a second reactive gas atmosphere partially in this passage of low conductance, a second step causing a plasma P to be generated in a second reactive atmosphere, a third step of producing active seeds by activating the reactive gas in the second reactive gas atmosphere by the plasma P, and a fourth step of producing reactive products by causing chemical reaction of the active seeds and the work on each other and processing the work J by gasifying the reactive products.

39. 发明专利

JP2001007092A PLASMA TREATMENT APPARATUS AND PLASMA TREATING METHOD 失效
公开(公告)号：JP2001007092A
公开(公告)日：2001-01-12
申请号：JP2000071347
申请日：2000-03-14
申请人： SHARP KK , MORI YUZO
发明人： TAKEUCHI HIROAKI , OKUDA TORU , MORI YUZO
IPC分类号： H05H1/24 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To stably feed a plasma process gas between a plasma treatment electrode and a substrate, even for a narrow width which should be treated with plasma. SOLUTION: This treatment apparatus 100 comprises a sample table 4 for mounting a substrate 2, a plasma treatment electrode 1 facing the substrate 2, a high frequency power source 3 for applying a high frequency voltage to the treatment electrode 1, and means for feeding a plasma treating gas to at least a first surface 2a of the substrate 2. The high frequency voltage is applied from the power source 3 to the treatment electrode 1 to generate a plasma based on the treatment gas, the plasma is applied to the first surface 2a of the substrate 2 to treat the substrate 2 with the plasma. The sample table 4 has a first conductor 41 formed on a first region of a second surface at the treatment electrode 1 side, and the first region includes a region corresponding to a pattern shape with plasma treatment applied to the substrate 2 by the treatment apparatus 100.

40. 发明专利

JP2000355773A THIN FILM DEPOSITION SYSTEM 失效
公开(公告)号：JP2000355773A
公开(公告)日：2000-12-26
申请号：JP16502299
申请日：1999-06-11
申请人： KOBE STEEL LTD , MORI YUZO
发明人： MORI YUZO , HAYASHI KAZUYUKI , MASUI TAKUYA , KINOSHITA TAKASHI , TAKAHASHI TOSHIAKI , OSADA KOICHI , NAKAGAMI AKIMITSU
IPC分类号： H01L21/205 , C23C16/505 , G03G5/08
摘要： PROBLEM TO BE SOLVED: To deposit a film of high quality at a high speed by suppressing the deposition of particles on a substrate. SOLUTION: A rotating electrode 18 is confronted with a substrate, and, while plasma is generated on the space therebetween, this plasma is fed with reaction gas to cause chemical reaction, by which a thin film is formed on the substrate. By providing a means of heating the electrode 18 and increasing the surface temp. of the electrode, the generation of particles is suppressed. Moreover, in consideration of the formation of a thin film on the surface by the electrode heating, the control of fixedly retaining the effective distance between the circumferential face of the electrode and the surface of the substrate is executed, e.g. by lowering a substrate carrying stand 12 in accordance with the increase of the total film forming time.

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