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31. 发明申请

WO2017047059A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：WO2017047059A1
公开(公告)日：2017-03-23
申请号：PCT/JP2016/004125
申请日：2016-09-12
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： KATSUYAMA, Tsukuru , KATO, Takashi
IPC分类号： H01S5/042 , H01S5/227 , H01S5/34
CPC分类号： H01S5/3402 , H01S5/042 , H01S5/0424 , H01S5/0425 , H01S5/227 , H01S5/3401 , H01S5/3408 , H01S5/34313 , H01S5/34346
摘要： A semiconductor laser operable by a reduced bias is disclosed. The semiconductor laser includes a substrate, an active area including a quantum well structure, an emitter area and a collector area, where those areas laterally extend on the substrate as the emitter and collector areas sandwich the active area therebetween. The emitter area and the collector area show the conduction type same to each other. The quantum well structure may cause the radiative transition from a higher energy band to a lower energy band, while, the emitter area has a conduction band whose level is equal to or higher than the higher energy band in the quantum well structure and the collector area in a level of the conduction band thereof is equal to or lower than the lower energy band of the quantum well structure.
摘要翻译：公开了一种通过减小的偏压可操作的半导体激光器。半导体激光器包括基板，包括量子阱结构，发射极区域和集电极区域的有源区域，其中这些区域在基板上横向延伸，因为发射极和集电极区域夹在其间的有源区域。发射极区域和集电极区域显示彼此相同的导电类型。量子阱结构可能导致从较高能带到较低能带的辐射跃迁，而发射极区具有等于或高于量子阱结构和集电极面积中较高能带的导带其导带的电平等于或低于量子阱结构的较低能带。

32. 发明申请

WO2005046012A1 HIGH TEMPERATURE LASER DIODE 审中-公开
标题翻译：高温激光二极管
公开(公告)号：WO2005046012A1
公开(公告)日：2005-05-19
申请号：PCT/CA2004/001924
申请日：2004-11-05
申请人： BOOKHAM TECHNOLOGY PLC , REID, Benoît
发明人： REID, Benoît
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2009 , H01S5/3211 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/3438
摘要： A semiconductor laser structure having confinement layers to confine electrons to an active region (quantum wells) and having separate antimonide-based cladding layers to provide additional electron confinement and photon confinement is suited to high temperature operation. The structure is suitable for lasing across telecommunications wavelengths from 980 nm to 1.55 µm (microns) . The cladding layer uses AlAsSb which can be lattice-matched to InP and can be used to achieve large conduction band offsets. It is very useful for coolerless (without thermo-electric cooler) operation.
摘要翻译：具有将电子限制到有源区（量子阱）并具有单独的基于锑化物的包覆层以提供额外的电子限制和光子约束的限制层的半导体激光器结构适用于高温操作。该结构适用于从980nm到1.55μm（微米）的电信波长的激光。包层使用可与InP晶格匹配的AlAsSb，可用于实现大的导带偏移。对于无冷却器（无热电冷却器）操作非常有用。

33. 发明申请

WO03052797A9 ELECTRICALLY PUMPED LONG-WAVELENGTH VCSEL AND METHODS OF FABRICATION 审中-公开
标题翻译：电泵浦长波长VCSEL和制造方法
公开(公告)号：WO03052797A9
公开(公告)日：2004-12-23
申请号：PCT/US0235467
申请日：2002-11-05
申请人： JIANG WENBIN , CHENG JULIAN , SHIEH CHAN-LONG , LEE HSING-CHUNG
发明人： JIANG WENBIN , CHENG JULIAN , SHIEH CHAN-LONG , LEE HSING-CHUNG
IPC分类号： H01L21/203 , H01L21/205 , H01S5/183 , H01S5/323 , H01S5/343 , H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01S5/18313 , H01S5/32366 , H01S5/34306 , H01S5/34346 , H01S2304/02 , H01S2304/04
摘要： A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR (104) positioned on a substrate (102) wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer (106) is positioned on the first DBR and to an active region (108) is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR (112) is epitaxially grown on the second cladding layer (110) wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen "N" incorporation. The DBR's are grown using MOCVD to improve the electrical performance.
摘要翻译：一种制造垂直腔表面发射激光器的方法，包括以下步骤：外延生长位于衬底（102）上的第一DBR（104），其中使用MOCVD外延生长第一DBR。基板在离轴结晶方向取向，这提高了辐射效率。第一覆层（106）位于第一DBR上，并且在第一覆层上外延生长有源区（108），其中使用等离子体辅助MBE外延生长有源区。在第二覆层（110）上外延生长第二DBR（112），其中使用MOCVD外延生长第二DBR。使用等离子体辅助MBE外延生长活性区域以增加氮“N”掺入的摩尔分数。 DBR使用MOCVD生长，以提高电气性能。

34. 发明申请

WO02025746A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND OPTICAL DEVICE CONTAINING IT 审中-公开
标题翻译：氮化物半导体发光元件和包含它的光学器件
公开(公告)号：WO02025746A1
公开(公告)日：2002-03-28
申请号：PCT/JP2001/008083
申请日：2001-09-17
IPC分类号： H01L33/02 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/30 , H01S5/343 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/34346
摘要： According to one embodiment, a nitride semiconductor light emitting element includes a light emitting layer (106) having a quantum well structure in which quantum well layers and barrier layers are laminated alternately, characterized in that the well layer consists of a nitride semiconductor containing In, and the barrier layer consists of a nitride semiconductor layer containing As, P or Sb. According to another embodiment, a nitride semiconductor light emitting element includes a light emitting layer having a quantum well structure in which quantum well layers and barrier layers are laminated alternately, characterized in that the well layer consists of GaN1-x-y-zAsxPySbz (0
摘要翻译：根据一个实施例，氮化物半导体发光元件包括交替层叠量子阱层和阻挡层的量子阱结构的发光层（106），其特征在于阱层由含有In，阻挡层由含有As，P或Sb的氮化物半导体层构成。根据另一实施例，氮化物半导体发光元件包括交替层叠量子阱层和阻挡层的量子阱结构的发光层，其特征在于阱层由GaN1-xy-zAsxPySbz（0

35. 发明专利

JP2014130897A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014130897A
公开(公告)日：2014-07-10
申请号：JP2012287340
申请日：2012-12-28
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGO HAJIME , KIMURA SHIGEYA , HARADA YOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/205 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/14 , H01L33/325 , H01S5/3211 , H01S5/3407 , H01S5/34333 , H01S5/34346
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency and a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer. The p-type semiconductor layer includes a first p-side layer composed of AlGaN (0≤x1
摘要翻译：要解决的问题：提供一种具有高发光效率的半导体发光元件及其制造方法。解决方案提供一种半导体发光元件，其包括n型半导体层，p型半导体层，和发光层。 p型半导体层包括由AlGaN（0≤x1<1）构成的第一p侧层，由AlGaN（0

36. 发明专利

JP2008506257A Improved light-emitting element of how to improve the maximum modulation speed of the light-emitting element and the maximum modulation speed, as well as the quantum well structure 有权
公开(公告)号：JP2008506257A
公开(公告)日：2008-02-28
申请号：JP2007520378
申请日：2005-06-29
申请人：アバゴ・テクノロジーズ・ファイバー・アイピー(シンガポール)プライベート・リミテッド
发明人：タン，マイケル，アール，ティー , タンドン，アシシュ , チャン，イン−ラン
IPC分类号： H01S5/183
CPC分类号： B82Y20/00 , H01S5/18358 , H01S5/2009 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S5/34386
摘要：本発明の方法は、Al
x Ga
1-x Asの障壁層（610、650）を形成し、その障壁層の間にInGaAsの量子井戸層（630）を形成し、量子井戸層と各障壁層の間に界面層（620）を形成することを含む。
【選択図】図４

37. 发明专利

JP2005012216A Heterostructure for group iii nitride light emitting device 审中-公开
标题翻译： III类氮化物发光装置的结构
公开(公告)号：JP2005012216A
公开(公告)日：2005-01-13
申请号：JP2004177062
申请日：2004-06-15
申请人： Lumileds Lighting Us Llc , ルミレッズライティングユーエスリミテッドライアビリティカンパニー
发明人： KIM JAMES C , GARDNER NATHAN F , KRAMES MICHAEL R , SHEN YU-CHEN , TROTTIER TROY A , WIERER JONATHAN J JR
IPC分类号： H01L29/06 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/3425 , H01S5/343 , H01S5/34333 , H01S5/34346
摘要： PROBLEM TO BE SOLVED: To provide a design of a heterostructure which can increase the number of charge carriers utilizable in quantum well layers in an active region, for a group III nitride light emitting device such as a light emitting diode.
SOLUTION: In a first embodiment, reservoir layers are included in the active region of the light emitting device together with barrier layers and quantum well layers. In a specific embodiment, a reservoir layer is thicker than the barrier layer and the quantum layer, and it contains an indium composition more than the barrier layer does and less than the quantum well layer does. In the specific embodiment, the reservoir layer is sloped. In a second embodiment, the active region of the light emitting device is composed of a supper lattice in which the quantum well layer and the barrier layer are formed alternately. In the specific embodiment, the barrier layer is thin to a degree that the charge carriers can pass through between the respective quantum well layers via the barrier layers.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供可以增加在有源区域中的量子阱层中可用的电荷载体的数量的异质结构的设计，对于诸如发光二极管的III族氮化物发光器件。解决方案：在第一实施例中，储存层与阻挡层和量子阱层一起被包括在发光器件的有源区域中。在一个具体实施方案中，储存层比阻挡层和量子层厚，并且其含有比阻挡层确实且小于量子阱层的铟组分。在具体实施例中，储层是倾斜的。在第二实施例中，发光器件的有源区由交替形成量子阱层和阻挡层的超晶格构成。在具体实施方案中，阻挡层薄到一定程度，电荷载流子可以经由阻挡层在相应的量子阱层之间通过。版权所有（C）2005，JPO＆NCIPI

38. 发明专利

JP2017208537A レーザーダイオードチップ审中-公开
公开(公告)号：JP2017208537A
公开(公告)日：2017-11-24
申请号：JP2017091885
申请日：2017-05-02
申请人：オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツング , Osram Opto Semiconductors GmbH
发明人：アイヒラークリストフ , ヴルムテレサ
IPC分类号： H01S5/343 , H01S5/34
CPC分类号： H01S5/3407 , H01S5/309 , H01S5/34333 , H01S5/34346
摘要：【課題】レーザー閾値および動作電流の温度依存性が低下したレーザーダイオードチップを特定する。【解決手段】n型半導体領域3、p型半導体領域5、および、n型半導体領域3とp型半導体領域5との間に配置された、単一量子井戸構造の形態の活性層4を備えるレーザーダイオードチップ10が説明される。単一量子井戸構造は、第1の障壁層41と第2の障壁層42との間に配置された量子井戸層43を含み、第1の障壁層41はn型半導体領域3に対向し、第2の障壁層42はp型半導体領域5に対向している。量子井戸層43の電子バンドギャップE QW は、第1の障壁層41の電子バンドギャップE B1 および第2の障壁層42の電子バンドギャップE B2 より小さく、第1の障壁層41の電子バンドギャップE B1 は、第2の障壁層42の電子バンドギャップE B2 より大きい。【選択図】図1

39. 发明专利

JP6001446B2 半導体発光素子及びその製造方法有权
公开(公告)号：JP6001446B2
公开(公告)日：2016-10-05
申请号：JP2012287340
申请日：2012-12-28
申请人：株式会社東芝
发明人：名古肇 , 木村重哉 , 原田佳幸 , 布上真也
IPC分类号： H01S5/343 , H01L21/205 , H01L33/32
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/325 , H01S5/34333 , H01S5/34346 , H01L33/007 , H01L33/025 , H01L33/14 , H01S5/3211 , H01S5/3407

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