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    • 41. 发明申请
    • Optical scanning unit and image forming apparatus
    • 光学扫描单元和成像设备
    • US20060262177A1
    • 2006-11-23
    • US11417122
    • 2006-05-04
    • Takasumi WadaTakayuki OhnoYasuhiro OnoAyumu OdaTakahisa Narikiyo
    • Takasumi WadaTakayuki OhnoYasuhiro OnoAyumu OdaTakahisa Narikiyo
    • B41J2/435
    • H04N1/00538G03G15/0435G03G2215/0119H04N1/506
    • An optical scanning unit irradiates a polygon mirror with a plurality of light beams emitted from a light source according to image data, and scans and exposes a plurality of photoreceptors with the plurality of light beams as scanning lights. The optical scanning unit comprises a primary optical system unit including an optical system that emits the plurality of light beams, which are emitted from the light source toward the polygon mirror, and a secondary optical system unit including an optical system that emits the light beams, which are reflected by the polygon mirror toward the photoreceptors. The arrangement is such that the primary optical system unit is fitted removably to the secondary optical system unit, and that a combined unit of the primary optical system unit and the secondary optical system unit is removably fitted to an image forming apparatus having the photoreceptors.
    • 光学扫描单元根据图像数据照射从光源发射的多个光束的多面镜,并且利用多个光束扫描并曝光多个感光体作为扫描光。 光学扫描单元包括主光学系统单元,其包括从光源朝向多面镜发射的多个光束的光学系统和包括发射光束的光学系统的次级光学系统单元, 其被多面镜反射到感光体。 这种布置使得主光学系统单元可拆卸地装配到次级光学系统单元,并且主光学系统单元和次级光学系统单元的组合单元可拆卸地装配到具有感光体的图像形成设备。
    • 44. 发明授权
    • Method and manufacturing a semiconductor device having a ruthenium or a ruthenium oxide
    • 方法和制造具有钌或氧化钌的半导体器件
    • US06753133B2
    • 2004-06-22
    • US10091531
    • 2002-03-07
    • Yasuhiro OnoSota Shinohara
    • Yasuhiro OnoSota Shinohara
    • G03F742
    • G03F7/427H01L21/31138H01L21/31144H01L21/76802
    • A method for fabricating a semiconductor device includes the following steps. At first, a Ru or RuO2 film and a SiO2 layer are formed over a Si substrate in that order. Then, a resist pattern is formed on the SiO2 layer and is then provided as a mask to etch the SiO2 layer to form a contact hole. The Ru or RuO2 film is exposed at the bottom of the contact hole. Subsequently, a plasma ashing is performed using an ashing gas prepared by mixing O2 with N2 where the composition ratio of N2 is 50% or more at a substrate temperature of 200° C. or more for ashing the resist pattern. Consequently, the present invention allows the ashing of the resist pattern over the Ru or RuO2 film at a high selectivity to prevent the Ru or RuO2 film from becoming disappeared.
    • 一种制造半导体器件的方法包括以下步骤。 首先,在Si基板上依次形成Ru或RuO 2膜和SiO 2层。 然后,在SiO 2层上形成抗蚀剂图案,然后提供作为掩模以蚀刻SiO 2层以形成接触孔。 Ru或RuO2膜暴露在接触孔的底部。 随后,使用通过混合O 2和N 2制备的灰化气体进行等离子体灰化,其中在200℃或更高的衬底温度下,N2的组成比为50%或更高,用于灰化抗蚀剂图案。 因此,本发明允许以高选择性使抗蚀剂图案在Ru或RuO 2膜上灰化以防止Ru或RuO 2膜消失。