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    • 55. 发明申请
    • Process for producing unitary graphene materials
    • 生产单一石墨烯材料的方法
    • US20140242275A1
    • 2014-08-28
    • US13815349
    • 2013-02-25
    • Aruna ZhamuMingchao WangLucy FuBor Z. Jang
    • Aruna ZhamuMingchao WangLucy FuBor Z. Jang
    • C01B31/04
    • C01B31/0469C01B31/0423C01B32/19C01B32/225
    • A process for producing a unitary graphene material, comprising: (a) preparing a graphene oxide (GO) gel having GO molecules dissolved in a fluid medium wherein the GO molecules contain higher than 20% by weight of oxygen; (b) dispensing and depositing a layer of GO gel onto a surface of a substrate to form a layer of deposited GO gel thereon, wherein the dispensing and depositing procedure includes shear-induced thinning; (c) removing the fluid medium from the deposited GO gel to form a GO layer having an inter-plane spacing d002 of 0.4 nm to 1.2 nm as determined by X-ray diffraction; and (d) heat treating the GO layer to form the unitary graphene material at a heat treatment temperature higher than 100° C. to an extent that d002 is decreased to a value of 0.3354 nm to 0.4 nm and the oxygen content is decreased to less than 5% by weight.
    • 一种制备单一石墨烯材料的方法,包括:(a)制备具有溶解在其中GO分子含有高于20重量%的氧的流体介质中的GO分子的氧化石墨烯(GO)凝胶; (b)将GO凝胶层分配并沉积到基底表面上以在其上形成沉积的GO凝胶层,其中分配和沉积步骤包括剪切诱导的稀化; (c)通过X射线衍射测定,从沉积的GO凝胶中除去流体介质以形成具有0.4nm至1.2nm的平面间距d002的GO层; 和(d)热处理GO层以在高于100℃的热处理温度下形成单一石墨烯材料,直到d002降低到0.3354nm至0.4nm的值,并且氧含量降低到更低 超过5重量%。