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61. 发明授权

US08771536B2 Dry-etch for silicon-and-carbon-containing films 有权
标题翻译：用于含硅和碳的膜的干蚀刻
公开(公告)号：US08771536B2
公开(公告)日：2014-07-08
申请号：US13279998
申请日：2011-10-24
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

62. 发明授权

US08741788B2 Formation of silicon oxide using non-carbon flowable CVD processes 有权
标题翻译：使用非碳流动CVD工艺形成氧化硅
公开(公告)号：US08741788B2
公开(公告)日：2014-06-03
申请号：US12840768
申请日：2010-07-21
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/762
CPC分类号： H01L21/762 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/31608 , H01L21/3185 , H01L21/76837
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将含碳和氮的无碳前体与自由基前体混合，并在衬底上沉积含硅和氮的层。然后将含氮和氮的层转化为氧化硅层。

63. 发明授权

US08466067B2 Post-planarization densification 有权
标题翻译：后平面化致密化
公开(公告)号：US08466067B2
公开(公告)日：2013-06-18
申请号：US13043131
申请日：2011-03-08
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/311
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹入的开放区域中，密度也可以增加。狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。这种效果也可以被描述为模式加载效应的降低。该方法涉及形成二氧化硅平坦化。平面化暴露出更靠近窄沟槽设置的新介质界面。新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

64. 发明申请

US20130089988A1 SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 有权
标题翻译：通过可转化氢终止方式选择性硅
公开(公告)号：US20130089988A1
公开(公告)日：2013-04-11
申请号：US13439079
申请日：2012-04-04
申请人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

65. 发明申请

US20130052827A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 有权
标题翻译：选择性抑制含有硅和氧的材料的干蚀速率
公开(公告)号：US20130052827A1
公开(公告)日：2013-02-28
申请号：US13449543
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/308
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

66. 发明申请

US20110294300A1 SELECTIVE ETCH FOR SILICON FILMS 有权
标题翻译：硅片的选择性蚀刻
公开(公告)号：US20110294300A1
公开(公告)日：2011-12-01
申请号：US13088930
申请日：2011-04-18
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/311 , H01L21/31116 , H01L21/32136
摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.
摘要翻译：描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。这些方法可用于在少量或不含氧化硅的同时去除多晶硅。更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。其他示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。诸如这些的应用由本文提供的方法实现，并且实现了新的工艺流程。预期这些工艺流程对于各种更细的线宽结构是理想的。本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

67. 发明申请

US20110217851A1 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 有权
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：US20110217851A1
公开(公告)日：2011-09-08
申请号：US13024487
申请日：2011-02-10
申请人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
发明人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形介电层（例如，硅 - 氮（Si-N-H）膜）的方法，材料和系统，其由无碳硅氮前驱体和自由基 - 氮前体主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

68. 发明申请

US20110159703A1 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 有权
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：US20110159703A1
公开(公告)日：2011-06-30
申请号：US12969877
申请日：2010-12-16
申请人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

69. 发明申请

US20110151676A1 METHODS OF THIN FILM PROCESS 审中-公开
标题翻译：薄膜工艺方法
公开(公告)号：US20110151676A1
公开(公告)日：2011-06-23
申请号：US13039724
申请日：2011-03-03
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/31
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

70. 发明申请

US20110061810A1 Apparatus and Methods for Cyclical Oxidation and Etching 审中-公开
标题翻译：循环氧化和蚀刻的装置和方法
公开(公告)号：US20110061810A1
公开(公告)日：2011-03-17
申请号：US12720957
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
IPC分类号： H01L21/3065
CPC分类号： H01L21/67115 , H01L21/0223 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

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