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1. 发明授权

US08318605B2 Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere 失效
标题翻译：用于防止暴露于大气中的掺杂氧化硅表面的缺陷的等离子体处理方法
公开(公告)号：US08318605B2
公开(公告)日：2012-11-27
申请号：US12173331
申请日：2008-07-15
申请人： Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
发明人： Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
IPC分类号： H01L21/302
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.
摘要翻译：通过等离子体处理方法防止在暴露于大气中形成BPSG表面缺陷，用于将从掺杂玻璃层表面附近的硅分离的硼和/或磷材料转化为气相化合物。处理等离子体由含有（a）氟化合物或（b）氢化合物的处理气体产生。

2. 发明授权

US08252696B2 Selective etching of silicon nitride 失效
标题翻译：选择性蚀刻氮化硅
公开(公告)号：US08252696B2
公开(公告)日：2012-08-28
申请号：US12247059
申请日：2008-10-07
申请人： Xinliang Lu , Haichun Yang , Zhenbin Ge , Nan Lu , David T. Or , Chien-Teh Kao , Mei Chang
发明人： Xinliang Lu , Haichun Yang , Zhenbin Ge , Nan Lu , David T. Or , Chien-Teh Kao , Mei Chang
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.
摘要翻译：本文提供了用于蚀刻包含硅和氮的电介质层的方法。在一些实施例中，这样的方法可以包括提供具有介于其上的硅和氮的电介质层的衬底，使用远程等离子体从包括氢（H 2）和三氟化氮（NF 3）的工艺气体形成反应物种; 并使用反应性物质蚀刻介电层。在一些实施例中，氧化物层邻近电介质层设置。在一些实施方案中，可以调节处理气体的流速比，使得介电层与氧化物层或基底中的至少一个的蚀刻选择性在约0.8至约4之间。

3. 发明授权

US07955510B2 Oxide etch with NH4-NF3 chemistry 有权
标题翻译：氧化物蚀刻与NH4-NF3化学
公开(公告)号：US07955510B2
公开(公告)日：2011-06-07
申请号：US12642268
申请日：2009-12-18
申请人： Reza Arghavani , Chien-Teh Kao , Xinliang Lu
发明人： Reza Arghavani , Chien-Teh Kao , Xinliang Lu
IPC分类号： H01L21/762
CPC分类号： H01L21/31116 , H01L21/02057 , H01L21/02068 , H01L21/31055 , H01L21/67069 , H01L21/76224 , H01L22/20 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： The present invention generally provides apparatus and methods for selectively removing various oxides on a semiconductor substrate. One embodiment of the invention provides a method for selectively removing an oxide on a substrate at a desired removal rate using an etching gas mixture. The etching gas mixture comprises a first gas and a second gas, and a ratio of the first gas and a second gas is determined by the desired removal rate.
摘要翻译：本发明通常提供用于选择性地去除半导体衬底上的各种氧化物的装置和方法。本发明的一个实施方案提供了一种使用蚀刻气体混合物以期望的去除速率选择性地去除衬底上的氧化物的方法。蚀刻气体混合物包括第一气体和第二气体，并且第一气体和第二气体的比例由所需的去除速率确定。

4. 发明申请

US20110104897A1 CONTACT CLEAN BY REMOTE PLASMA AND REPAIR OF SILICIDE SURFACE 有权
标题翻译：通过远程等离子体清洁和清洁硅胶表面
公开(公告)号：US20110104897A1
公开(公告)日：2011-05-05
申请号：US13004740
申请日：2011-01-11
申请人： XINLIANG LU , CHIEN-TEH KAO , CHIUKIN STEVE LAI , MEI CHANG
发明人： XINLIANG LU , CHIEN-TEH KAO , CHIUKIN STEVE LAI , MEI CHANG
IPC分类号： H01L21/3205
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.
摘要翻译：实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。

5. 发明申请

US20100099263A1 NF3/H2 REMOTE PLASMA PROCESS WITH HIGH ETCH SELECTIVITY OF PSG/BPSG OVER THERMAL OXIDE AND LOW DENSITY SURFACE DEFECTS 审中-公开
标题翻译： NF3 / H2具有PSG / BPSG在氧化物和低密度表面缺陷上的高选择性的远程等离子体处理
公开(公告)号：US20100099263A1
公开(公告)日：2010-04-22
申请号：US12254716
申请日：2008-10-20
申请人： Chien-Teh Kao , Xinliang Lu , Haichun Yang , Zhenbin Ge , David T. Or , Mei Chang
发明人： Chien-Teh Kao , Xinliang Lu , Haichun Yang , Zhenbin Ge , David T. Or , Mei Chang
IPC分类号： H01L21/34 , H01L21/465 , H01L21/428
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/32422 , H01L21/67069 , H01L21/67109
摘要： A method and apparatus for selectively etching doped semiconductor oxides faster than undoped oxides. The method comprises applying dissociative energy to a mixture of nitrogen trifluoride and hydrogen gas remotely, flowing the activated gas toward a processing chamber to allow time for charged species to be extinguished, and applying the activated gas to the substrate. Reducing the ratio of hydrogen to nitrogen trifluoride increases etch selectivity. A similar process may be used to smooth surface defects in a silicon surface.
摘要翻译：一种用于比未掺杂氧化物更快地选择性地蚀刻掺杂半导体氧化物的方法和装置。所述方法包括将离解能量远离将三氯化氢和氢气的混合物应用，将活化气体向处理室流动，以使带电物质的时间消失，并将活性气体施加到基底上。降低氢气与三氟化氮的比例提高了蚀刻选择性。可以使用类似的工艺来平滑硅表面中的表面缺陷。

6. 发明申请

US20100093151A1 OXIDE ETCH WITH NH4-NF3 CHEMISTRY 有权
标题翻译：具有NH4-NF3化学的氧化物蚀刻
公开(公告)号：US20100093151A1
公开(公告)日：2010-04-15
申请号：US12642268
申请日：2009-12-18
申请人： Reza Arghavani , Chien-Teh Kao , Xinliang Lu
发明人： Reza Arghavani , Chien-Teh Kao , Xinliang Lu
IPC分类号： H01L21/762
CPC分类号： H01L21/31116 , H01L21/02057 , H01L21/02068 , H01L21/31055 , H01L21/67069 , H01L21/76224 , H01L22/20 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： The present invention generally provides apparatus and methods for selectively removing various oxides on a semiconductor substrate. One embodiment of the invention provides a method for selectively removing an oxide on a substrate at a desired removal rate using an etching gas mixture. The etching gas mixture comprises a first gas and a second gas, and a ratio of the first gas and a second gas is determined by the desired removal rate.
摘要翻译：本发明通常提供用于选择性地去除半导体衬底上的各种氧化物的装置和方法。本发明的一个实施方案提供了一种使用蚀刻气体混合物以期望的去除速率选择性地去除衬底上的氧化物的方法。蚀刻气体混合物包括第一气体和第二气体，并且第一气体和第二气体的比例由所需的去除速率确定。

7. 发明授权

US07550381B2 Contact clean by remote plasma and repair of silicide surface 失效
标题翻译：通过远程等离子体接触清洁并修复硅化物表面
公开(公告)号：US07550381B2
公开(公告)日：2009-06-23
申请号：US11183999
申请日：2005-07-18
申请人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
发明人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.
摘要翻译：提供了处理金属硅化物表面或层的回收方法。在至少一个实施例中，清洁具有设置在其上的至少部分氧化的金属硅化物表面的衬底以除去氧化区域以提供改变的金属硅化物表面。然后在足以回收金属硅化物表面的条件下将改变的金属硅化物表面暴露于一种或多种含硅化合物。

8. 发明申请

US20090104764A1 Methods and Systems for Forming at Least One Dielectric Layer 有权
标题翻译：用于形成最少一层电介质层的方法和系统
公开(公告)号：US20090104764A1
公开(公告)日：2009-04-23
申请号：US11876649
申请日：2007-10-22
申请人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
发明人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
IPC分类号： H01L21/3205 , C23F1/00 , H01L21/311
CPC分类号： H01L21/3185 , H01L21/31116 , H01L21/3143 , H01L21/76829 , H01L21/76832 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
摘要翻译：一种用于形成结构的方法包括在衬底的表面上形成至少一个特征。在至少一个特征上形成含氮介电层。在至少一个特征的至少一个侧壁上的含氮层的第一部分以第一速率除去，并且含氮层的第二部分在邻近至少一个特征的底部区域的衬底上以第二速率被去除。第一个比率大于第二个比率。在含氮介电层上形成介电层。

9. 发明申请

US20090095621A1 SUPPORT ASSEMBLY 审中-公开
标题翻译：支持大会
公开(公告)号：US20090095621A1
公开(公告)日：2009-04-16
申请号：US12257093
申请日：2008-10-23
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： C25F7/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个方面，该装置包括支撑组件。在一个实施例中，支撑组件包括联接到盘形主体的轴。轴具有真空导管，传热流体导管和形成在其中的气体导管。盘状体包括上表面，下表面和圆柱形外表面。热电偶嵌入盘状体。凸缘从圆柱形外表面径向向外延伸，其中盘形体的下表面包括凸缘的一侧。液体通道形成在靠近凸缘和下表面的盘形体中。流体通道联接到轴的传热流体导管。在盘状体的上表面上形成有多个槽，并且通过盘状体中的孔与轴的真空管道连接。气体导管通过盘状体形成并将轴的气体导管连接到盘形体的圆柱形外表面。盘状体中的气体导管具有与盘状体的中心线大致垂直的取向。

10. 发明申请

US20080160210A1 PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH 有权
标题翻译：通过等离子体清洗方法形成的钝化层减少原生氧化物生长
公开(公告)号：US20080160210A1
公开(公告)日：2008-07-03
申请号：US11962791
申请日：2007-12-21
申请人： Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
发明人： Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
IPC分类号： C23F17/00 , C22F1/00
CPC分类号： H01L21/02068 , H01L21/31116 , H01L21/76224 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.
摘要翻译：本文描述的实施例提供了用于去除衬底上的自然氧化物表面同时钝化下面的衬底表面的方法。在一个实施例中，提供了一种方法，其包括将包含氧化物层的衬底定位在处理室内，将衬底的第一温度调节至约80℃或更低，从处理室内的气体混合物产生清洁等离子体使得气体混合物含有NH 3/3N 3 N 3摩尔比为约10或更大的氨和三氟化氮，并将清洗等离子体冷凝到基底上。含有六氟硅酸铵的薄膜在等离子体清洁过程中部分地由天然氧化物形成。该方法还包括在处理室内加热衬底至约100℃或更高的第二温度，同时从衬底上移除薄膜并在其上形成钝化表面。

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