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71. 发明专利

JPS62222646A JUDGING METHOD FOR NONDEFECTIVE OR DEFECTIVE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS62222646A
公开(公告)日：1987-09-30
申请号：JP6673486
申请日：1986-03-24
申请人： KYUSHU DENSHI KINZOKU KK
发明人： KITAGAWA KUNIHIKO , DOYAMA MASAO , SUZUKI YASUYUKI
IPC分类号： H01L21/66 , G01N23/22 , G01R31/26
摘要： PURPOSE:To discriminate a nondefective or a defective in a nondestructive manner in a short time by measuring the state of distribution of physical quantity regarding gamma-rays being emitted when positrons annihilate with electrons in a semiconductor substrate and deciding the nondefective or the defective. CONSTITUTION:Samples are adjusted to a shape that a positron radiation source 1 is held by samples 2 to be decided as semiconductor substrates, gamma-rays being emitted are captured by a detector 3, pulses detected by the detector 3 are amplified by amplifiers 4, 5, 6, and the height of pulses is converted into a numeric value representing energy by an AD converter 7, and memorized to a memory 8. The shape of an energy distribution curve acquired is compared with an H parameter as a criterion for discrimination.

72. 发明专利

JPS6165750A Take-off device of wafer sheet 失效
标题翻译：切片装置
公开(公告)号：JPS6165750A
公开(公告)日：1986-04-04
申请号：JP18616784
申请日：1984-09-04
申请人： Kyushu Denshi Kinzoku Kk , Nippon Spindle Mfg Co Ltd , Osaka Titanium Seizo Kk
发明人： NINOMIYA MASAHARU , ONISHI ISAO , KOSAKA TOSHIHIRO
IPC分类号： B23Q7/04 , B28D5/00
CPC分类号： B28D5/0094
摘要： PURPOSE:To surely take off a wafer, by providing a means, which releases the wafer from its close attachment to a cutter by injection of pressure air, and a means giving torque to the wafer in a direction it is detached from the cutter. CONSTITUTION:An attractively mounting mechanism 2 provides a sucker 12, in-out movably supported to an attracting main unit 10 and equipping a resilient unit 18 urging rearward, and an attracting pad 20 mounted to this sucker. While a supporting mechanism 3, supporting the attractively mounting mechanism 2, provides a lifting means 50, lifting the attractively mounting mechanism 2 with a follow-up motion to the cut rising motion of an ingot (a), and a reciprocating transfer member 31 for the attractively mounting mechanism 2 approaching to and separating from a wafer (b). While an air blow nozzle, which releases the wafer (b) from its close attachment to a cutter C by injecting air synchronously with the attracting action, is provided in the vicinity of the sucker 12 of the attractively mounting mechanism 2.
摘要翻译：目的：通过提供通过注入压力空气将晶片与切割器的紧密连接释放晶片的手段，以及在与切割器分离的方向上向晶片施加扭矩的装置来确实地取下晶片。构成：吸引人的安装机构2提供可移动地支撑到吸引主体10并装备向后推动的弹性单元18的吸入器12和安装到该吸盘的吸引垫20。虽然支撑吸引力的安装机构2的支撑机构3提供提升装置50，通过对铸锭（a）的切割上升运动的跟随运动提升吸引人的安装机构2，以及用于吸引人的安装机构2接近晶片（b）并与晶片分离。当吸引安装机构2的吸盘12附近设置有通过与吸引作用同步地喷射空气而使晶片（b）从与其切割器C紧密连接而释放的吹气喷嘴。

73. 发明专利

JPS59111997A Device for epitaxial growth 失效
标题翻译：外来成长装置
公开(公告)号：JPS59111997A
公开(公告)日：1984-06-28
申请号：JP21979082
申请日：1982-12-14
申请人： Kyushu Denshi Kinzoku Kk
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B25/08 , C30B25/10 , H01L21/205
CPC分类号： C30B25/08
摘要： PURPOSE:In an upright device for epitaxial growth, to improve quality of product and to raise productivity, by forming reflection layers made of a material having high reflectance on the inner faces of a metallic bell-jar and a substrate base, respectively. CONSTITUTION:The reflection layers made of Silver, gold, aluminum, etc. are formed on the inner faces of the metallic bell-jar 1-1 and the substrate base 1-2, and cooled with water by the cooling pipe 2. A wafer is set on the susceptor 4 supported by the supporting device 7, heated by the high-frequency coil 5 with rotating the susceptor 4, a reaction gas is fed from the pipe 8-1, hydrogen is made to flow from the inlet 8-2 to carry out epitaxial growth. In the operation, loss of radiation heat released from the susceptor 4 and the surface of the wafer 6 is prevented by the reflection layers 14, the temperature gradient and temperature distribution in the susceptor 4 are extremely improved and quality is greatly raised.
摘要翻译：目的：在用于外延生长的直立装置中，通过分别在金属钟形瓶和基板基底的内表面上形成由具有高反射率的材料制成的反射层，从而提高产品质量并提高生产率。构成：在金属钟形瓶1-1和基板基体1-2的内表面上形成由银，金，铝等制成的反射层，并通过冷却管2用水冷却。晶片被设置在由支撑装置7支撑的基座4上，由基座4旋转而被高频线圈5加热，从管8-1供给反应气体，使氢从入口8-2流出进行外延生长。在操作中，通过反射层14防止从基座4和晶片6的表面放出的辐射热的损失，基座4中的温度梯度和温度分布极大地提高，并且质量大大提高。

74. 发明专利

JP2531825B2 失效
公开(公告)号：JP2531825B2
公开(公告)日：1996-09-04
申请号：JP8168790
申请日：1990-03-29
申请人： SUMITOMO SHICHITSUKUSU KK , KYUSHU DENSHI KINZOKU KK
发明人： YAMADA NOBUO
IPC分类号： H01L21/02 , H01L21/304

75. 发明专利

JPH0565478B1 失效
公开(公告)号：JPH0565478B1
公开(公告)日：1993-09-17
申请号：JP25597385
申请日：1985-11-14
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： YAMAMURA HARUO , ICHIKAWA HIROSHI
IPC分类号： C30B15/26 , H01L21/18 , H01L21/208

76. 发明专利

JPH0535715B2 失效
公开(公告)号：JPH0535715B2
公开(公告)日：1993-05-27
申请号：JP14975687
申请日：1987-06-16
申请人： OOSAKA CHITANIUMU SEIZO KK , KYUSHU DENSHI KINZOKU KK
发明人： KURAMOCHI KAORU
IPC分类号： C30B15/14 , C30B15/00 , H01L21/208

77. 发明专利

JPH0529308B2 失效
公开(公告)号：JPH0529308B2
公开(公告)日：1993-04-30
申请号：JP7256388
申请日：1988-03-26
申请人： KYUSHU DENSHI KINZOKU KK , OOSAKA CHITANIUMU SEIZO KK
发明人： NARUTOMI TOSHIO
IPC分类号： G01N21/91 , G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66

78. 发明专利

JPH0444215B2 失效
公开(公告)号：JPH0444215B2
公开(公告)日：1992-07-21
申请号：JP11665587
申请日：1987-05-12
申请人： OOSAKA CHITANIUMU SEIZO KK , KYUSHU DENSHI KINZOKU KK
发明人： MAKINO HIDEO
IPC分类号： G01F23/292 , G01F23/28

79. 发明专利

JPS63315589A SINGLE CRYSTAL PRODUCTION APPARATUS 失效
公开(公告)号：JPS63315589A
公开(公告)日：1988-12-23
申请号：JP14975687
申请日：1987-06-16
申请人： OSAKA TITANIUM , KYUSHU DENSHI KINZOKU KK
发明人： KURAMOCHI KAORU
IPC分类号： C30B15/14 , C30B15/00 , H01L21/208
摘要： PURPOSE:To produce a high-quality single crystal in high efficiency, by encircling a single crystal pulling zone with a heat-shielding member composed of an annular rim and a specific heat-shielding member, thereby forming a proper temperature gradient along the pulling direction while keeping excellent heat-insulation effect. CONSTITUTION:An annular space having a right-angled triangle cross-section is formed by integrating an annular outer ring part 43a having L-shaped cross-section with an inner ring part 43b having an inverted conical form. A heat-insulation material 43d is closely packed in the annular space to form a heat-shielding member 43. A heat-shielding part 4 is produced by engaging the heat-shielding member 43 with an inner circumferential edge of a thick-walled annular rim part 41 provided with a supporting cylinder 42 on the lower face near the outer circumferential edge via flanges 43e, 43f and a seat 41a of the annular rim part 41. The heat-shielding part 4 is arranged around a pulling zone through which a single crystal 8 is pulled up via a pulling shaft 7 and a seed crystal 6 from a double-walled crucible 1 having a quartz vessel 1b in a graphite vessel 1a of a Czochralski single crystal production apparatus. A single crystal 8 can be grown while effectively shielding the heat radiated from the crucible 1 and the molten liquid.

80. 发明专利

JPS63310683A METHOD OF WASHING FLUOROPLASTIC PRODUCT 失效
公开(公告)号：JPS63310683A
公开(公告)日：1988-12-19
申请号：JP14630887
申请日：1987-06-12
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： NISHIYAMA KATSUAKI
IPC分类号： B08B3/02 , B08B3/08

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