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    • 72. 发明申请
    • HINGE ASSEMBLY
    • 铰链装配
    • US20100101053A1
    • 2010-04-29
    • US12396557
    • 2009-03-03
    • Xiao-Bo LIJin-Xin WangJian Li
    • Xiao-Bo LIJin-Xin WangJian Li
    • E05D11/08E05D11/10
    • G06F1/1681G06F1/1616Y10T16/54Y10T16/54035
    • A hinge assembly includes a rotatable shaft, a rotatable stand, a fixed stand, a cam and a cam follower. The rotatable stand and the cam follower are non-rotatably connected to the rotatable shaft. The fixed stand and the cam are rotatably connected to the rotatable shaft. The cam is fixed to the fixed stand and contacted with the cam follower. The cam forms a limiting step, the cam follower forms a limiting surface on a periphery to abut against the limiting step. One of the cam and cam follower forms a positioning protrusion, the other one of the cam and cam follower defines a positioning groove to engage with the positioning protrusion.
    • 铰链组件包括可旋转轴,可旋转支架,固定支架,凸轮和凸轮从动件。 可旋转支架和凸轮从动件不可旋转地连接到可旋转轴。 固定支架和凸轮可旋转地连接到可旋转轴。 凸轮固定在固定架上并与凸轮从动件接触。 凸轮形成限制步骤,凸轮从动件在周边形成限制表面以抵靠限制步骤。 凸轮和凸轮从动件中的一个形成定位突起,凸轮和凸轮从动件中的另一个限定了与定位突起接合的定位槽。
    • 73. 发明授权
    • Sliding mechanism for portable electronic device
    • 便携式电子设备的滑动机构
    • US07697280B2
    • 2010-04-13
    • US12125882
    • 2008-05-22
    • Jin-Xin Wang
    • Jin-Xin Wang
    • H05K7/16
    • H04M1/0237
    • An exemplary sliding mechanism (100) used for a sliding-type portable electronic device, includes a sliding member (10), a sliding member (20), and a sliding module (30). The main housing defines a curved sliding groove (203) therein. The sliding module includes two movable arms (301, 302), an elastic member (50) positioned between the two movable arms, and two sliding pegs (402, 404). The sliding pegs are partially received in the sliding groove of the main housing. A first end of each movable arm is rotatably attached to the sliding member, and a second end opposite to the first end of each movable arm is fixed to one of the sliding pegs. Two ends of the elastic member are correspondingly fixed to the two movable arms for driving the movable arms to move towards each other.
    • 用于滑动式便携式电子设备的示例性滑动机构(100)包括滑动构件(10),滑动构件(20)和滑动模块(30)。 主壳体在其中限定弯曲的滑动槽(203)。 滑动模块包括两个可移动臂(301,302),一个位于两个活动臂之间的弹性构件(50)和两个滑动钉(402,404)。 滑动销部分地容纳在主壳体的滑动槽中。 每个可移动臂的第一端可旋转地附接到滑动构件,并且与每个可动臂的第一端相对的第二端固定到滑动钉中的一个。 弹性构件的两端相应地固定在两个可动臂上,用于驱动可动臂朝向彼此移动。
    • 76. 发明申请
    • HINGE ASSEMBLY FOR AN ELECTRONIC DEVICE
    • 用于电子设备的铰链组件
    • US20100005626A1
    • 2010-01-14
    • US12261232
    • 2008-10-30
    • JIN-XIN WANGGUI-LI YANGLIANG WEILI-JUN YUAN
    • JIN-XIN WANGGUI-LI YANGLIANG WEILI-JUN YUAN
    • E05D3/10
    • G06F1/1681G06F1/162Y10T16/5403Y10T16/540345Y10T16/5472
    • A hinge assembly includes a first rotating module and a second rotating module. The first rotating module includes a frame and a pivot mechanism positioned on the frame. The second rotating module includes a supporting body, a shaft, a rotating washer, a stationary washer, a resilient ring, and a nut. A first end of the shaft is fixed on the frame, and the supporting body, the rotating washer, the stationary washer, the resilient ring, and the nut are orderly sleeved on a second end, opposite to that of the first end, of the shaft. The nut fixes the supporting body, the rotating washer, the stationary washer, and the resilient rings to the shaft. The rotating washer and the stationary washer forms at least one protrusion and at least depression for receiving the at least one protrusion respectively. The pivotal shaft is configured to drive the stationary washer to rotate.
    • 铰链组件包括第一旋转模块和第二旋转模块。 第一旋转模块包括框架和位于框架上的枢转机构。 第二旋转模块包括支撑体,轴,旋转垫圈,固定垫圈,弹性环和螺母。 轴的第一端固定在框架上,支撑体,旋转垫圈,固定垫圈,弹性环和螺母有序地套在与第一端相反的第二端上 轴。 螺母将支撑体,旋转垫圈,固定垫圈和弹性环固定到轴上。 旋转垫圈和固定垫圈分别形成至少一个突起和至少凹陷,用于分别接收至少一个突起。 枢转轴构造成驱动固定式垫圈旋转。
    • 78. 发明申请
    • Novel Method to Enhance Channel Stress in CMOS Processes
    • 在CMOS工艺中增强沟道应力的新方法
    • US20090227084A1
    • 2009-09-10
    • US12357712
    • 2009-01-22
    • Zhiqiang WuXin Wang
    • Zhiqiang WuXin Wang
    • H01L21/336
    • H01L29/7833H01L21/26506H01L29/165H01L29/6656H01L29/6659H01L29/7845H01L29/7847H01L29/7848
    • The invention provides a method of fabricating a semiconductor device that enhances the amount of stress that is transmitted to the channel region for carrier mobility enhancement. In one embodiment an amorphous region is formed at or near the gate dielectric interface prior to source/drain anneal. In a second embodiment the gate material is amorphous as deposited and processing temperatures are kept below the gate material crystallization temperature until stress enhancement processing has been completed. The amorphous gate material deforms during high temperature anneal and converts from an amorphous to a polycrystalline phase allowing more stress to be transmitted into the channel region. This enhances carrier mobility and improves transistor drive current.
    • 本发明提供了一种制造半导体器件的方法,该半导体器件增强了传输到沟道区的载流子迁移率增强的应力量。 在一个实施例中,在源极/漏极退火之前,在栅极电介质界面处或附近形成非晶区域。 在第二实施例中,栅极材料是非晶态的,并且处理温度保持低于栅极材料结晶温度,直到应力增强处理完成。 非晶栅极材料在高温退火期间变形,并从非晶态转变为多晶相,允许更多的应力传输到沟道区。 这增强了载流子迁移率并改善了晶体管驱动电流。
    • 79. 发明申请
    • Novel Method to Form Memory Cells to Improve Programming Performance of Embedded Memory Technology
    • 用于形成记忆单元以提高嵌入式存储器技术编程性能的新方法
    • US20090181506A1
    • 2009-07-16
    • US12407624
    • 2009-03-19
    • Jihong ChenEddie Hearl BreashearsXin WangJohn Howard Macpeak
    • Jihong ChenEddie Hearl BreashearsXin WangJohn Howard Macpeak
    • H01L21/8239H01L21/426
    • H01L29/7881H01L21/26586H01L27/115H01L27/11521H01L29/40114
    • An embedded memory device and method of forming MOS transistors having reduced masking requirements and defects using a single drain sided halo implant in the NMOS FLASH or EEPROM memory regions is discussed. The memory device comprises a memory region and a logic region. Logic transistors within the logic region have halos implanted at an angle underlying the channel from both drain and source region sides. Asymmetric memory cell transistors within the memory region receive a selective halo implant only from the drain side of the channel and not from the source side to form a larger halo on the drain side and leave a higher dopant concentration more deeply into the source side. One method of asymmetrically forming memory cell transistors comprises masking over the memory region; halo implanting a first conductivity dopant in NMOS regions of the logic region in first and second implant directions; masking over the logic region; halo implanting the first conductivity dopant in NMOS regions of the memory region in the second implant direction only, thereby reducing the number of masks required; masking over the memory region; halo implanting a second conductivity dopant in PMOS regions of the logic region in the first and second implant directions.
    • 讨论了在NMOS闪存或EEPROM存储器区域中使用单个漏极侧卤素注入形成具有减小的掩模要求和缺陷的MOS晶体管的嵌入式存储器件和方法。 存储器件包括存储器区域和逻辑区域。 逻辑区域内的逻辑晶体管具有从沟道和源极区两侧的通道下方的角度注入的光晕。 存储器区域内的不对称存储单元晶体管仅从沟道的漏极侧接收选择性晕圈注入而不从源极接收,以在漏极侧形成较大的卤素,并且在源极侧更高的掺杂浓度。 一种不对称形成存储单元晶体管的方法包括:对存储区进行掩蔽; 在第一和第二植入方向上在所述逻辑区域的NMOS区域中注入第一电导率掺杂剂; 屏蔽逻辑区域; 在第二注入方向仅在存储区域的NMOS区域中注入第一电导率掺杂剂,从而减少所需的掩模数量; 掩蔽内存区域; 在所述第一和第二植入方向上在所述逻辑区域的PMOS区域中注入第二电导率掺杂剂。