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    • 83. 发明申请
    • INLINE METHOD TO MONITOR ONO STACK QUALITY
    • 用于监控堆栈质量的在线方法
    • WO2013148090A3
    • 2015-07-02
    • PCT/US2013029290
    • 2013-03-06
    • CYPRESS SEMICONDUCTOR CORPYANG YUKRISHNASWAMY RAMKUMAR
    • YANG YUKRISHNASWAMY RAMKUMAR
    • H01L29/792
    • H01L21/28282H01L22/14H01L22/34
    • Embodiments of structures and methods for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling layer are described. In one embodiment, the method comprises: forming on a substrate a structure including a nitrided tunneling-layer and a charge-storage-layer overlying the tunneling-layer comprising a first charge-storage layer adjacent to the tunneling-layer, and a second charge-storage layer overlying the first charge-storage layer, wherein the first charge-storage layer is separated from the second charge-storage layer by a antitunneling layer comprising an oxide; depositing a positive charge on the charge-storage layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge storage- layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages.
    • 描述了用于确定包括电荷存储层和隧道层的非易失性存储晶体管的操作特性的结构和方法的实施例。 在一个实施例中,该方法包括:在衬底上形成包括氮化隧道层和覆盖隧道层的电荷存储层的结构,该隧穿层包括与隧道层相邻的第一电荷存储层和第二电荷 覆盖在第一电荷存储层上的第一电荷存储层,其中第一电荷存储层通过包含氧化物的反隧道层与第二电荷存储层分离; 在电荷存储层上沉积正电荷并确定第一电压以建立通过电荷存储层和隧穿层的第一泄漏电流; 在电荷存储层上沉积负电荷并确定第二电压以建立通过电荷存储层和隧穿层的第二泄漏电流; 以及通过计算所述第一和第二电压之间的差来确定差分电压。