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1. 发明授权

US07612454B2 Semiconductor device with improved contact fuse 有权
标题翻译：具有改善接触保险丝的半导体器件
公开(公告)号：US07612454B2
公开(公告)日：2009-11-03
申请号：US12172937
申请日：2008-07-14
申请人： Honglin Guo , Dongmei Lei , Brian Goodlin , Joe McPherson
发明人： Honglin Guo , Dongmei Lei , Brian Goodlin , Joe McPherson
IPC分类号： H01L23/52 , H01L21/44
CPC分类号： H01L23/5256 , H01L23/3677 , H01L27/0617 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.
摘要翻译：本发明的一个方面提供一种集成电路（IC）[400b]。 IC包括晶体管[410b]和接触式保险丝[422b]。接触熔断器各自包括导电层[424b]，截头锥形接触件[426b]具有接触导电层的较窄端部和位于导电层上方的第一金属层[427b]。截头锥形接触件的较宽端接触第一金属层。截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。接触熔断器还包括位于第一金属层之上并接触第一金属层的散热器[432b]。

2. 发明授权

US08043973B2 Mask overhang reduction or elimination after substrate etch 有权
标题翻译：衬底蚀刻后的掩模突出减少或消除
公开(公告)号：US08043973B2
公开(公告)日：2011-10-25
申请号：US12467019
申请日：2009-05-15
申请人： Brian Goodlin , Thomas D Bonifield
发明人： Brian Goodlin , Thomas D Bonifield
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L29/945 , H01L21/308 , H01L21/31111 , H01L21/31116 , H01L21/76229 , H01L21/76898 , H01L27/1087 , H01L29/66181 , Y10S438/978
摘要： A method of forming IC devices includes providing a substrate and forming a patterned masking layer including at least one masked region having at least one masking layer, and a feature region bounded by the masking layer. Etching forms an etched feature in the substrate, wherein undercutting during the etching forms at least one mask overhang region over a surface portion of the etched feature that is recessed relative to an outer edge of the masking layer. A pullback etch process exclusive of any additional patterning step laterally etches the masking layer. The conditions for the pullback etch retain at least a portion of the masking layer and reduce a length of the mask overhang region by at least 50%, or eliminate the mask overhang region entirely. The etched feature is then filled after the pullback etch process to form a filled etched feature.
摘要翻译：一种形成IC器件的方法包括提供衬底并形成图案化掩模层，其包括至少一个具有至少一个掩模层的掩模区域和由掩模层限定的特征区域。蚀刻在衬底中形成蚀刻特征，其中蚀刻期间的底切形成相对于掩模层的外边缘凹陷的蚀刻特征的表面部分上的至少一个掩模悬垂区域。除了任何额外的图案化步骤之外的回拉蚀刻工艺横向蚀刻掩模层。拉回蚀刻的条件保留掩模层的至少一部分并且将掩模悬伸部分的长度减小至少50％，或者完全消除掩模悬垂区域。然后在拉回蚀刻工艺之后填充蚀刻的特征以形成填充的蚀刻特征。

3. 发明申请

US20060024872A1 Method for manufacturing improved sidewall structures for use in semiconductor devices 有权
公开(公告)号：US20060024872A1
公开(公告)日：2006-02-02
申请号：US10902902
申请日：2004-07-30
申请人： Brian Goodlin , Amitava Chatterjee , Shirin Siddiqui , Jong Yoon
发明人： Brian Goodlin , Amitava Chatterjee , Shirin Siddiqui , Jong Yoon
IPC分类号： H01L21/338 , H01L21/337
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： The present invention provides a method for manufacturing a semiconductor device and method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing a semiconductor device (100), among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having sidewall spacers (210 or 410) on opposing sidewalls thereof and placing source/drain implants (310, 510) into the substrate (110) proximate the gate structure (130). The method further includes removing at least a portion of the sidewall spacers (210 or 410) and annealing the source/drain implants (310, 510) to form source/drain regions (710) after removing the at least a portion of the sidewall spacers (210 or 410).

4. 发明申请

US20060205169A1 Method for manufacturing a semiconductor device using a sidewall spacer etchback 有权
标题翻译：用于制造使用侧壁间隔件回蚀的半导体器件的方法
公开(公告)号：US20060205169A1
公开(公告)日：2006-09-14
申请号：US11074905
申请日：2005-03-08
申请人： Jong Yoon , Shirin Siddiqui , Amitava Chatterjee , Brian Goodlin , Karen Kirmse
发明人： Jong Yoon , Shirin Siddiqui , Amitava Chatterjee , Brian Goodlin , Karen Kirmse
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L29/665 , H01L29/6653
摘要： The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having L-shaped sidewall spacers (430) on opposing sidewalls thereof and placing source/drain implants (310 or 510) into the substrate (110) proximate the gate structure (130). The method for manufacturing the semiconductor device further includes removing at least a portion of a horizontal segment of the L-shaped sidewall spacers (430).
摘要翻译：本发明提供一种制造半导体器件的方法和集成电路的制造方法。除了其他步骤之外，用于制造半导体器件的方法包括在衬底（110）上形成栅极结构（130），所述栅极结构（130）在其相对的侧壁上具有L形侧壁间隔物（430），并且将源极/ 漏极植入物（310或510）进入靠近栅极结构（130）的衬底（110）中。制造半导体器件的方法还包括去除L形侧壁间隔物（430）的水平段的至少一部分。

5. 发明授权

US07413980B2 Semiconductor device with improved contact fuse 有权
标题翻译：具有改善接触保险丝的半导体器件
公开(公告)号：US07413980B2
公开(公告)日：2008-08-19
申请号：US11380120
申请日：2006-04-25
申请人： Honglin Guo , Dongmei Lei , Brian Goodlin , Joe McPherson
发明人： Honglin Guo , Dongmei Lei , Brian Goodlin , Joe McPherson
IPC分类号： H01L21/44
CPC分类号： H01L23/5256 , H01L23/3677 , H01L27/0617 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.
摘要翻译：本发明的一个方面提供一种集成电路（IC）。 IC包括晶体管和接触式保险丝。接触熔丝各自包括导电层，截头锥形接触件具有接触导电层的较窄端部和位于导电层上方的第一金属层。截头锥形接触件的较宽端接触第一金属层。截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。每个接触保险丝还包括位于第一金属层之上并接触第一金属层的散热器。

6. 发明申请

US20080265366A1 SEMICONDUCTOR DEVICE WITH IMPROVED CONTACT FUSE 有权
标题翻译：具有改进的触点保险丝的半导体器件
公开(公告)号：US20080265366A1
公开(公告)日：2008-10-30
申请号：US12172937
申请日：2008-07-14
申请人： Honglin Guo , Dongmei Lei , Brian Goodlin , Joe McPherson
发明人： Honglin Guo , Dongmei Lei , Brian Goodlin , Joe McPherson
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L23/3677 , H01L27/0617 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.
摘要翻译：本发明的一个方面提供一种集成电路（IC）[400b]。 IC包括晶体管[410b]和接触式保险丝[422b]。接触熔断器各自包括导电层[424b]，截头锥形接触件[426b]具有接触导电层的较窄端部和位于导电层上方的第一金属层[427b]。截头锥形接触件的较宽端接触第一金属层。截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。接触熔断器还包括位于第一金属层之上并接触第一金属层的散热器[432b]。

7. 发明申请

US20070246796A1 SEMICONDUCTOR DEVICE WITH IMPROVED CONTACT FUSE 有权
标题翻译：具有改进的触点保险丝的半导体器件
公开(公告)号：US20070246796A1
公开(公告)日：2007-10-25
申请号：US11380120
申请日：2006-04-25
申请人： Honglin Guo , Dongmei Li , Brian Goodlin , Joe McPherson
发明人： Honglin Guo , Dongmei Li , Brian Goodlin , Joe McPherson
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L23/3677 , H01L27/0617 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.
摘要翻译：本发明的一个方面提供一种集成电路（IC）。 IC包括晶体管和接触式保险丝。接触熔丝各自包括导电层，截头锥形接触件具有接触导电层的较窄端部和位于导电层上方的第一金属层。截头锥形接触件的较宽端接触第一金属层。截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。每个接触保险丝还包括位于第一金属层之上并接触第一金属层的散热器。

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