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1. 发明授权

US09448119B2 Radiation thermometer using off-focus telecentric optics 有权
标题翻译：辐射温度计使用离焦远心光学
公开(公告)号：US09448119B2
公开(公告)日：2016-09-20
申请号：US13531162
申请日：2012-06-22
申请人： Guray Tas , Jing Zhou , Daewon Kwon
发明人： Guray Tas , Jing Zhou , Daewon Kwon
IPC分类号： G01J5/00 , G01J5/08 , G01J5/06 , C23C16/44
CPC分类号： G01J5/0831 , C23C16/44 , G01J5/0007 , G01J5/06 , G01J5/0806 , G01J5/0859
摘要： A radiation thermometer utilizing an off-focus telecentric lens arrangement in chemical vapor deposition reactors. An object assembly of one or more optical components is positioned at a distance equal to its focal length from an aperture stop. The aperture stop is dimensioned so that the chief rays are substantially parallel with the optical axis of the object assembly, and so that the rays that pass through the aperture stop define a narrow solid angle about the chief rays. The off-focus telecentric arrangement thus configured is focused at infinity, but is utilized to capture radiation from a relatively proximate target (e.g., within a couple meters) that is out of focus. The capture of collimated radiation from the target diminishes the contribution of stray radiation, particularly with targets having a highly specular surface.
摘要翻译：在化学气相沉积反应器中使用离焦远心透镜装置的辐射温度计。一个或多个光学部件的物体组件被定位成等于其孔径光阑的焦距的距离。孔径光阑的尺寸使得主光线基本上与物体组件的光轴平行，并且使得穿过孔径光阑的光线围绕主光线限定窄的立体角。如此构造的离焦远心布置被聚焦在无限远处，但是被用于从不相关的相对近的目标（例如，在几米内）捕获辐射。来自目标的准直辐射的捕获减少了杂散辐射的贡献，特别是具有高度镜面的目标。

2. 发明申请

US20130343425A1 RADIATION THERMOMETER USING OFF-FOCUS TELECENTRIC OPTICS 有权
标题翻译：辐射温度计使用非聚焦光谱
公开(公告)号：US20130343425A1
公开(公告)日：2013-12-26
申请号：US13531162
申请日：2012-06-22
申请人： Guray Tas , Jing Zhou , Daewon Kwon
发明人： Guray Tas , Jing Zhou , Daewon Kwon
IPC分类号： G01J5/02
CPC分类号： G01J5/0831 , C23C16/44 , G01J5/0007 , G01J5/06 , G01J5/0806 , G01J5/0859
摘要： A radiation thermometer utilizing an off-focus telecentric lens arrangement in chemical vapor deposition reactors. An object assembly of one or more optical components is positioned at a distance equal to its focal length from an aperture stop. The aperture stop is dimensioned so that the chief rays are substantially parallel with the optical axis of the object assembly, and so that the rays that pass through the aperture stop define a narrow solid angle about the chief rays. The off-focus telecentric arrangement thus configured is focused at infinity, but is utilized to capture radiation from a relatively proximate target (e.g., within a couple meters) that is out of focus. The capture of collimated radiation from the target diminishes the contribution of stray radiation, particularly with targets having a highly specular surface.
摘要翻译：在化学气相沉积反应器中使用离焦远心透镜装置的辐射温度计。一个或多个光学部件的物体组件被定位成等于其孔径光阑的焦距的距离。孔径光阑的尺寸使得主光线基本上与物体组件的光轴平行，并且使得穿过孔径光阑的光线围绕主光线限定窄的立体角。如此构造的离焦远心布置被聚焦在无限远处，但是被用于从不相关的相对近的目标（例如，在几米内）捕获辐射。来自目标的准直辐射的捕获减少了杂散辐射的贡献，特别是具有高度镜面的目标。

3. 发明申请

US20130340677A1 CONTROL OF STRAY RADIATION IN A CVD CHAMBER 有权
标题翻译：控制CVD室中的辐射
公开(公告)号：US20130340677A1
公开(公告)日：2013-12-26
申请号：US13531220
申请日：2012-06-22
申请人： Guray Tas , Jing Zhou , Daewon Kwon
发明人： Guray Tas , Jing Zhou , Daewon Kwon
IPC分类号： C23C16/52 , B23P11/00
CPC分类号： G01J5/06 , C23C16/18 , C23C16/4582 , C23C16/46 , C23C16/481 , C23C16/52 , Y10T29/49826
摘要： An apparatus and method for controlling stray radiation within a CVD chamber. A heater array disposed beneath a wafer carrier for radiatively heating of the wafer carrier includes a peripheral or outermost heating element or elements. Scattered radiation originating from a designated segment of the peripheral heating element(s) can be reduced locally by one of several mechanisms, including reducing the emission (e.g., operating temperature) of the designated segment, or capturing or deflecting a portion of the radiation originating from the designated segment. In one embodiment, an electrical connector on a resistance heating element provides the reduced emission from the designated segment. It has been found that radiation thermometers fixed proximate an axis that extends from the center of the wafer carrier and across the designated segment is subject to less stray radiation, thus providing a more reliable temperature reading in the optical wavelengths.
摘要翻译：一种用于控制CVD室内杂散辐射的装置和方法。设置在晶片载体下面用于辐射加热晶片载体的加热器阵列包括外围的或最外面的加热元件。来自外围加热元件的指定片段的散射辐射可以通过几种机制之一来局部地减少，包括减少指定片段的发射（例如，操作温度），或者捕获或偏转一部分辐射源从指定的段。在一个实施例中，电阻加热元件上的电连接器提供来自指定段的减少的发射。已经发现，靠近从晶片载体的中心延伸并跨越指定的区段的轴固定的辐射温度计经受更少的杂散辐射，从而在光波长中提供更可靠的温度读数。

4. 发明申请

US20060224631A1 System and method for using graphic and text data of Korean American families to enhance Korean American networking 审中-公开
标题翻译：使用韩国美国家庭图形和文本数据来加强韩国美国网络的系统和方法
公开(公告)号：US20060224631A1
公开(公告)日：2006-10-05
申请号：US11398209
申请日：2006-04-04
申请人： Daewon Kwon
发明人： Daewon Kwon
IPC分类号： G06F17/00
CPC分类号： G06Q99/00
摘要： A system and method for performing one or more of the following is provided: a) centralized Korean American family networking; b) information entering/viewing/editing a nucleus family member data; c) masking of selected data fields for privacy protection from public; d) method of linking nucleus families; e) search and display method of selected nucleus family tree; f) interface and use of family bulletin; g) use of member Korean American News/Forum; h) method of Korean American Networking; i) application support through Bon-Kwan (family origin name); j) linkage to Korean genealogy in Korea; and k) use of Korean American History.
摘要翻译：提供一种执行以下一项或多项功能的系统和方法：a）韩国美国家庭网络集中; b）输入/查看/编辑核心成员数据的信息; c）屏蔽所选择的数据字段以防止公众隐私保护; d）连接核心家族的方法; e）选择核心家族树的搜索和显示方法; f）家庭公告的界面和使用; g）使用韩国美国新闻/论坛; h）韩国网络的方法; i）通过Bon-Kwan（家庭姓氏）的申请支持; j）韩国与韩国家谱的联系; 和k）使用韩国美国历史。

5. 发明授权

US06519045B2 Method and apparatus for measuring very thin dielectric film thickness and creating a stable measurement environment 有权
公开(公告)号：US06519045B2
公开(公告)日：2003-02-11
申请号：US09772901
申请日：2001-01-31
申请人： Daewon Kwon
发明人： Daewon Kwon
IPC分类号： G01B1128
CPC分类号： H01L22/12
摘要： A thickness metrology apparatus and method for accurately determining the actual thickness of thin dielectric film on a semiconductor wafer. The wafer is subjected to a heat treatment such as baking at a heating station of the apparatus to cause desorption of organic compounds from the film. The treated wafer is transferred to a measurement stage where the thickness of the film is measured by an ellipsometer, for example. The actual thickness of the film is determined from the measured thickness and a change in the measured film thickness as a function of time for the film due to absorption of organic compounds onto the film following desorption of organic compounds therefrom.

6. 发明授权

US09085824B2 Control of stray radiation in a CVD chamber 有权
标题翻译：控制CVD室中的杂散辐射
公开(公告)号：US09085824B2
公开(公告)日：2015-07-21
申请号：US13531220
申请日：2012-06-22
申请人： Guray Tas , Jing Zhou , Daewon Kwon
发明人： Guray Tas , Jing Zhou , Daewon Kwon
IPC分类号： G01J5/00 , C23C16/46 , C23C16/52
CPC分类号： G01J5/06 , C23C16/18 , C23C16/4582 , C23C16/46 , C23C16/481 , C23C16/52 , Y10T29/49826
摘要： An apparatus and method for controlling stray radiation within a CVD chamber. A heater array disposed beneath a wafer carrier for radiatively heating of the wafer carrier includes a peripheral or outermost heating element or elements. Scattered radiation originating from a designated segment of the peripheral heating element(s) can be reduced locally by one of several mechanisms, including reducing the emission (e.g., operating temperature) of the designated segment, or capturing or deflecting a portion of the radiation originating from the designated segment. In one embodiment, an electrical connector on a resistance heating element provides the reduced emission from the designated segment. It has been found that radiation thermometers fixed proximate an axis that extends from the center of the wafer carrier and across the designated segment is subject to less stray radiation, thus providing a more reliable temperature reading in the optical wavelengths.
摘要翻译：一种用于控制CVD室内杂散辐射的装置和方法。设置在晶片载体下面用于辐射加热晶片载体的加热器阵列包括外围或最外面的加热元件。来自外围加热元件的指定片段的散射辐射可以通过几种机制之一来局部地减少，包括减少指定片段的发射（例如，操作温度），或者捕获或偏转源的一部分辐射从指定的段。在一个实施例中，电阻加热元件上的电连接器提供来自指定段的减少的发射。已经发现，靠近从晶片载体的中心延伸并跨越指定的区段的轴固定的辐射温度计经受更少的杂散辐射，从而在光波长中提供更可靠的温度读数。

7. 发明授权

US06934031B2 Methods and apparatus for determining optical constants of semiconductors and dielectrics with interband states 失效
标题翻译：用于确定具有带间状态的半导体和电介质的光学常数的方法和装置
公开(公告)号：US06934031B2
公开(公告)日：2005-08-23
申请号：US09963638
申请日：2001-09-27
申请人： Daewon Kwon
发明人： Daewon Kwon
IPC分类号： G01N21/47 , G01N21/55 , B05D5/06 , G01N21/41 , H01L21/66 , G01N4/00
CPC分类号： G01N21/47
摘要： A method for calculating the refractive index and the extinction coefficient for materials relates the physical parameters being calculated to the scattering caused by interband states in the material using a model which includes a quantum mechanical transition equation for transitions between valence and/or conduction bands and interband states of the material. The method can be used for material engineering, process control for processes affecting the interband states in the material, and in estimation of the amount of interband states which have been introduced into a material as a result of such a process. Apparatus for implementing the method are also disclosed.
摘要翻译：用于计算材料的折射率和消光系数的方法将使用包括用于价键和/或导带之间的跃迁的量子力学跃迁方程式的模型与正在计算的物理参数相关联的物理参数与由材料中的带间状态引起的散射相关联材料的状态。该方法可用于材料工程，影响材料中的带间状态的工艺的过程控制，以及由于这种过程而被引入到材料中的带间状态量的估计。还公开了实现该方法的装置。

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