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    • 6. 发明授权
    • Method of fabricating an integrated orifice plate and cap structure
    • 制造集成孔板和盖结构的方法
    • US08940559B2
    • 2015-01-27
    • US13289208
    • 2011-11-04
    • Daniel A KearlRio Rivas
    • Daniel A KearlRio Rivas
    • H01L21/00B41J2/16
    • B41J2/1603B41J2/1628B41J2/1629B41J2/1631B41J2/1642B41J2/1643B41J2/1645
    • In an embodiment, a method of fabricating an integrated orifice plate and cap structure includes forming an orifice bore on the front side of a product wafer, coating side walls of the orifice bore with a protective material, grinding the product wafer from its back side to a final thickness, forming a first hardmask for subsequent cavity formation, forming a second hardmask over the first hardmask for subsequent descender formation, forming a softmask over the second hardmask for subsequent convergent bore formation, etching a latent convergent bore using the softmask as an etch delineation feature, etching a descender using the second hardmask as an etch delineation feature, and anisotropic etching of convergent bore walls and cavities using the first hardmask as an etch delineation feature.
    • 在一个实施例中,制造集成孔板和盖结构的方法包括在产品晶片的正面上形成孔口孔,用保护材料涂覆孔孔的侧壁,将产品晶片从其背面研磨到 最后的厚度,形成用于后续空腔形成的第一硬掩模,在第一硬掩模上形成第二硬掩模用于随后的下沉形成,在第二硬掩模上形成软掩模以用于随后的会聚孔形成,使用软掩模蚀刻潜在会聚孔作为蚀刻 描绘特征,使用第二硬掩模蚀刻下坡作为蚀刻描绘特征,以及使用第一硬掩模作为蚀刻描绘特征的会聚孔壁和空腔的各向异性蚀刻。