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1. 发明申请

US20090179541A1 VACUUM INSULATION PANEL WITH SMOOTH SURFACE METHOD FOR MAKING AND APPLICATIONS OF SAME 审中-公开
标题翻译：具有平面表面方法的真空绝热面板的制造和应用
公开(公告)号：US20090179541A1
公开(公告)日：2009-07-16
申请号：US12332596
申请日：2008-12-11
申请人： Douglas M. Smith , Stephen Wallace
发明人： Douglas M. Smith , Stephen Wallace
IPC分类号： F25D23/06 , B32B1/06 , B32B37/00
CPC分类号： F25D23/06 , B29C63/02 , B29C2791/006 , B29L2007/002 , B32B3/06 , B32B7/02 , B32B15/08 , F25D2201/14 , Y02B40/34 , Y10T428/231
摘要： Vacuum insulation panels and methods for making vacuum insulation panels. The panels include first and second spaced-apart sidewalls, where at least one of the sidewalls has a very smooth surface. The panels are particularly useful as insulation in applications where a smooth and aesthetically acceptable surface is required, such as in a refrigeration appliance. A method for making a vacuum insulation panel can include placing an insulative core material and a liner within a barrier envelope defining an enclosure, evacuating the enclosure, and sealing the envelope to form the vacuum insulation panel.
摘要翻译：真空隔热板及制作真空隔热板的方法。这些面板包括第一和第二间隔开的侧壁，其中至少一个侧壁具有非常光滑的表面。这些面板在需要光滑和美观可接受的表面的应用中特别有用，例如在制冷设备中。用于制造真空绝热面板的方法可以包括将绝缘芯材和衬垫放置在限定外壳的隔离罩中，排空外壳，并密封外壳以形成真空绝热面板。

2. 发明授权

US06610145B2 Deposition of nanoporous silica films using a closed cup coater 失效
公开(公告)号：US06610145B2
公开(公告)日：2003-08-26
申请号：US09956361
申请日：2001-09-19
申请人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
发明人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
IPC分类号： B05C1102
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

3. 发明授权

US06518205B1 Multifunctional reagents for the surface modification of nanoporous silica films 有权
标题翻译：用于纳米多孔二氧化硅薄膜表面改性的多功能试剂
公开(公告)号：US06518205B1
公开(公告)日：2003-02-11
申请号：US09714010
申请日：2000-11-16
申请人： Hui-Jung Wu , James S. Drage , Douglas M. Smith , Teresa Ramos , Stephen Wallace , Neil Viernes
发明人： Hui-Jung Wu , James S. Drage , Douglas M. Smith , Teresa Ramos , Stephen Wallace , Neil Viernes
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3105 , H01L21/3125 , H01L21/31695 , Y10T428/31663
摘要： A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.
摘要翻译：一种处理基板上的二氧化硅电介质膜的方法，其包括使合适的亲水二氧化硅膜与有效量的多官能表面改性剂反应。薄膜存在于基材上，任选具有亲水孔表面的孔结构，反应进行足以使所述表面改性剂渗透所述孔结构的时间，并产生介电常数为约3或更少，其中表面改性剂是疏水性的并且适合于在这些亲水性表面上甲硅烷基化或封端硅烷醇部分。还公开了包括这种膜的介电膜和集成电路。

4. 发明授权

US06495906B2 Simplified process for producing nanoporous silica 失效
标题翻译：生产纳米多孔二氧化硅的简化方法
公开(公告)号：US06495906B2
公开(公告)日：2002-12-17
申请号：US10078046
申请日：2002-02-07
申请人： Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , Stephen Wallace , James Drage , Hui-Jung Wu , Neil Viernes , Lisa B. Brungardt
发明人： Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , Stephen Wallace , James Drage , Hui-Jung Wu , Neil Viernes , Lisa B. Brungardt
IPC分类号： H01L2358
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3105 , H01L21/3125 , H01L21/31695 , Y10T428/31663
摘要： The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.
摘要翻译：本发明涉及低介电常数纳米多孔二氧化硅薄膜及其制造方法。具有适合于生产集成电路的晶片，其表面上存在多个凸起线和/或电子元件的衬底具有相对较高的孔隙率低介电常数的含硅聚合物膜组合物。

5. 发明授权

US06495479B1 Simplified method to produce nanoporous silicon-based films 失效
标题翻译：制备纳米多孔硅基薄膜的简化方法
公开(公告)号：US06495479B1
公开(公告)日：2002-12-17
申请号：US09566287
申请日：2000-05-05
申请人： Hui-Jung Wu , James S Drage , Lisa Brungardt , Teresa A. Ramos , Douglas M. Smith
发明人： Hui-Jung Wu , James S Drage , Lisa Brungardt , Teresa A. Ramos , Douglas M. Smith
IPC分类号： H01L21469
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96
摘要： A nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with processes for producing these improved films. The films are produced by a process that includes (a) preparing a silicon-based, precursor composition including a porogen, (b) coating a substrate with the silicon-based precursor to form a film, (c) aging or condensing the film in the presence of water, (d) heating the gelled film at a temperature and for a duration effective to remove substantially all of said porogen, and wherein the applied precursor composition is substantially aged or condensed in the presence of water in liquid or vapor form, without the application of external heat or exposure to external catalyst.
摘要翻译：提供了可用于制造半导体器件，集成电路等的纳米多孔介电膜，以及用于制造这些改进的膜的方法。通过包括（a）制备包含致孔剂的硅基前体组合物的方法制备薄膜，（b）用硅基前体涂覆基材以形成薄膜，（c）将薄膜老化或冷凝水的存在，（d）在有效去除基本上全部所述致孔剂的温度和持续时间加热胶凝膜，并且其中所施加的前体组合物在液体或蒸汽形式的水存在下基本上老化或冷凝，无需外部加热或暴露于外部催化剂。

6. 发明授权

US06455130B1 Nanoporous dielectric films with graded density and process for making such films 失效
标题翻译：具有梯度密度的纳米多孔介电膜和制造这种膜的方法
公开(公告)号：US06455130B1
公开(公告)日：2002-09-24
申请号：US09706027
申请日：2000-11-03
申请人： Stephen Wallace , Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , James S. Drage
发明人： Stephen Wallace , Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , James S. Drage
IPC分类号： B32B328
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/24537 , Y10T428/24595 , Y10T428/249978 , Y10T428/249979 , H01L2924/00
摘要： The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.
摘要翻译：本发明涉及纳米多孔介电膜及其制造方法。在其表面上具有多个凸起线的基底设置有相对较高的孔隙率，低介电常数，位于凸起线之间的含硅聚合物组合物和位于该线上的较低孔隙率，高介电常数的含硅组合物。

7. 发明授权

US06372666B1 Process for producing dielectric thin films 失效
标题翻译：制备电介质薄膜的方法
公开(公告)号：US06372666B1
公开(公告)日：2002-04-16
申请号：US09379866
申请日：1999-08-24
申请人： Teresa Ramos , Douglas M. Smith , James Drage , Rick Roberts
发明人： Teresa Ramos , Douglas M. Smith , James Drage , Rick Roberts
IPC分类号： B05D306
CPC分类号： H01L21/31695 , C23C18/06 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1291 , C23C18/1295 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/76828 , H01L21/76829
摘要： A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.
摘要翻译：一种在衬底上形成纳米多孔二氧化硅电介质涂层的方法。将含有沉积膜的基材悬浮在可密封的热板内，同时不与电热板接触。电热板被密封，惰性气体流过基板。将加热板加热至约350℃或更高的温度，并且将基板强制接触加热的热板。将基底加热一段时间，以充分去除所得纳米多孔介电涂层的除气残余物。

8. 发明授权

US06172120B2 Process for producing low density gel compositions 失效
标题翻译：生产低密度凝胶组合物的方法
公开(公告)号：US06172120B2
公开(公告)日：2001-01-09
申请号：US08826982
申请日：1997-04-09
申请人： Douglas M. Smith , William C. Ackerman , Stephen Wallace , Elsbeth R. Lokey
发明人： Douglas M. Smith , William C. Ackerman , Stephen Wallace , Elsbeth R. Lokey
IPC分类号： B01J1300
CPC分类号： B01J13/0052 , B01J13/0091
摘要： Processes for producing gel compositions comprising: esterifying a portion of the surface of a gel composition sufficient to produce a gel composition having a rod density of less than or equal to 0.15 g/cc, and/or a tap density of less than or equal to 0.2 g/cc through contact with at least one esterification agent and at least one catalyst. The processes may be utilized to produce low density gel compositions without the need for a supercritical drying step or thermal treatment.
摘要翻译：用于生产凝胶组合物的方法，包括：将足以产生棒密度小于或等于0.15g / cc的凝胶组合物的一部分表面凝胶化，和/或振实密度小于或等于通过与至少一种酯化剂和至少一种催化剂接触来制备0.2g / cc。该方法可用于生产低密度凝胶组合物，而不需要超临界干燥步骤或热处理。

9. 发明授权

US6063714A Nanoporous dielectric thin film surface modification 失效
标题翻译：纳米介电薄膜表面改性
公开(公告)号：US6063714A
公开(公告)日：2000-05-16
申请号：US749186
申请日：1996-11-14
申请人： Douglas M. Smith , Gregory P. Johnston , William C. Ackerman , Shin-Puu Jeng
发明人： Douglas M. Smith , Gregory P. Johnston , William C. Ackerman , Shin-Puu Jeng
IPC分类号： H01L21/314 , H01L21/316 , H01L21/768 , H01L21/00 , B05D3/04
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695 , H01L21/76801
摘要： This pertains generally to precursors and deposition methods suited to aerogel thin film fabrication of nanoporous dielectrics. A method of forming a nanoporous dielectric on a semiconductor substrate is disclosed. By a method according to the present invention, a precursor sol is applied as a nongelling thin film 14 to a semiconductor substrate 10. This substrate may contain patterned conductors 12, gaps 13, and/or other structures. A portion of the solvent is evaporated from the thin film 14 to produce a reduced thickness film 18. Film 18 is gelled and may be aged. A surface modification agent is introduced to the reaction atmosphere in a vaporish form, e.g., a vapor, mist, aerosol, or similar form. The surface modifier can then diffuse into, condense onto, and/or settle onto the wet gel and then diffuse throughout the thin film. This vaporish introduction of the surface modification agent ensures that there are no strong fluid flows across the wafer that might damage the wet gel. It can also be compatible with standard processing equipment and can potentially be used with other reaction atmosphere controls that reduce premature drying of the gel.
摘要翻译：这通常涉及适用于纳米多孔电介质的气凝胶薄膜制造的前体和沉积方法。公开了一种在半导体衬底上形成纳米多孔电介质的方法。通过根据本发明的方法，将前体溶胶作为不合格薄膜14施加到半导体衬底10.该衬底可以包含图案化导体12，间隙13和/或其它结构。溶剂的一部分从薄膜14蒸发以产生厚度减薄的薄膜18.薄膜18胶凝并且可以老化。将表面改性剂以蒸气形式，例如蒸汽，雾，气溶胶或类似形式引入反应气氛中。然后，表面改性剂可以扩散进入，冷凝到和/或沉降到湿凝胶上，然后在整个薄膜中扩散。表面改性剂的蒸发引入确保了晶片上没有强大的流体流动，这可能会损坏湿凝胶。它也可以与标准的加工设备兼容，并且可以与其他反应气氛控制器一起使用，以减少凝胶的过早干燥。

10. 发明授权

US5928723A Progress for producing surface modified metal oxide compositions 失效
标题翻译：生产表面改性金属氧化物组合物的进展
公开(公告)号：US5928723A
公开(公告)日：1999-07-27
申请号：US826978
申请日：1997-04-09
申请人： Kenneth C. Koehlert , Douglas M. Smith , William C. Ackerman , Stephen Wallace , David J. Kaul
发明人： Kenneth C. Koehlert , Douglas M. Smith , William C. Ackerman , Stephen Wallace , David J. Kaul
IPC分类号： C04B41/45 , C04B41/81 , C09C1/30 , C09C3/08 , B05D7/00
CPC分类号： C04B41/009 , C04B18/146 , C04B41/4584 , C04B41/81 , C09C1/3063 , C09C3/08 , C01P2004/80 , C01P2006/10 , C04B2111/27 , Y02W30/94
摘要： A process for producing surface modified metal oxide and/or organo-metal oxide compositions comprising esterifying at least a portion of the metal oxide and/or organo-metal oxide composition through contact with at least one esterification agent and at least one catalyst wherein the esterification agent and the catalyst are in the liquid phase. The process may be utilized to produce hydrophobic metal oxide and/or organo-metal oxide compositions at ambient temperature and/or ambient pressure conditions.
摘要翻译：一种用于生产表面改性的金属氧化物和/或有机金属氧化物组合物的方法，其包括通过与至少一种酯化剂和至少一种催化剂接触来酯化至少一部分金属氧化物和/或有机金属氧化物组合物，其中酯化试剂和催化剂处于液相。该方法可用于在环境温度和/或环境压力条件下制备疏水性金属氧化物和/或有机金属氧化物组合物。

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