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1. 发明申请

WO2009064875A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
标题翻译：细粒束辅助修饰薄膜材料
公开(公告)号：WO2009064875A1
公开(公告)日：2009-05-22
申请号：PCT/US2008/083391
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , DORAI, Rajesh , GODET, Ludovic
发明人： ENGLAND, Jonathan, Gerald , DORAI, Rajesh , GODET, Ludovic
IPC分类号： H01L21/20 , H01L29/786 , H01L31/042
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.
摘要翻译：公开了用于处理衬底的方法的几个实例。在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

2. 发明申请

WO2009064872A2 PARTICLE BEAM ASSISTED MODIFCATION OF THIN FILM MATERIALS 审中-公开
标题翻译：粒子束辅助薄膜材料的调制
公开(公告)号：WO2009064872A2
公开(公告)日：2009-05-22
申请号：PCT/US2008083388
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , ENGLAND JONATHAN GERALD , SINCLAIR FRANK , KOO JOHN BON WONG , DORAI RAJESH , GODET LUDOVIC
发明人： ENGLAND JONATHAN GERALD , SINCLAIR FRANK , KOO JOHN BON WONG , DORAI RAJESH , GODET LUDOVIC
IPC分类号： H01L21/26 , H01L29/78 , H01L31/04
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
摘要翻译：公开了用于处理衬底的方法的几个实例。在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体，邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。

3. 发明申请

WO2008136858A3 TECHNIQUES FOR REMOVING MOLECULAR FRAGMENTS FROM AN ION IMPLANTER 审中-公开
标题翻译：从离子植入物中去除分子碎片的技术
公开(公告)号：WO2008136858A3
公开(公告)日：2009-04-30
申请号：PCT/US2007084102
申请日：2007-11-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
发明人： HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
IPC分类号： H01J7/18 , C01B3/00 , H01J27/02 , H01J37/317
CPC分类号： C23C14/48 , C01B3/0026 , C01B3/0031 , C01B3/0036 , C01B3/0047 , C01B3/0068 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/31705 , Y02E60/327
摘要： Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.
摘要翻译：公开了从离子注入机去除分子碎片的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于从离子注入机去除分子碎片的装置。该装置可以包括配置成耦合到离子源室并且将进料材料供应到离子源室的供给机构。该装置还可以包括放置在进料材料的流动路径中的一种或多种吸氢材料，以防止进料中至少一部分含氢分子碎片进入离子源室。

4. 发明申请

WO2008058246A2 ION IMPLANTATION DEVICE WITH A DUAL PUMPING MODE AND METHOD THEREOF 审中-公开
标题翻译：具有双抽模式的离子植入装置及其方法
公开(公告)号：WO2008058246A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/084114
申请日：2007-11-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , OLSON, Joseph, C. , ENGLAND, Jonathan, Gerald , HATEM, Christopher, R. , SCHEUER, Jay, Thomas
发明人： OLSON, Joseph, C. , ENGLAND, Jonathan, Gerald , HATEM, Christopher, R. , SCHEUER, Jay, Thomas
IPC分类号： H01J37/08 , H01J37/302 , H01J37/317
CPC分类号： H01J27/022 , H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/006 , H01J2237/182
摘要： An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
摘要翻译：公开了一种用于生产原子或分子离子束的双泵浦模式及其方法的离子注入装置。在一个特定的示例性实施例中，提供离子注入装置，用于控制对应于正在产生的离子束种类的离子束源壳体内的压力。离子注入装置可以包括离子束源壳体，其包括用于离子束产生的多种物质。还可以包括用于从离子束源壳体排出气体的泵送部分。可以进一步包括控制器，以根据对应于用于离子束产生的多种物质的种类的泵送参数来控制泵送部分。

5. 发明申请

WO2008036529A2 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子注入技术
公开(公告)号：WO2008036529A2
公开(公告)日：2008-03-27
申请号：PCT/US2007/078104
申请日：2007-09-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , BLAKE, Julian , ENGLAND, Jonathan, Gerald , HOLDEN, Scott , WALTHER, Steven, R. , LIEBERT, Reuel , MUKA, Richard, S. , JEONG, Ukyo , LIU, Jinning , SHIM, Kyu-Ha , MEHTA, Sandeep
发明人： BLAKE, Julian , ENGLAND, Jonathan, Gerald , HOLDEN, Scott , WALTHER, Steven, R. , LIEBERT, Reuel , MUKA, Richard, S. , JEONG, Ukyo , LIU, Jinning , SHIM, Kyu-Ha , MEHTA, Sandeep
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制的离子注入的技术。在一个特定的示例性实施例中，可以将这些技术实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，其适于在离子注入机的终端站内的离子注入过程期间测量晶片的温度。该设备还可以包括耦合到终端站的热调节单元。所述设备可进一步包括与所述热传感器和所述热调节单元通信的控制器，其中所述控制器将所述测量的温度与期望的晶片温度进行比较，并基于所述比较使所述热调节单元调节所述晶片的温度。 / p>

6. 发明申请

WO2008020972A2 TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：低温离子植入技术
公开(公告)号：WO2008020972A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/016807
申请日：2007-07-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , WALTHER, Steven, R. , MUKA, Richard, S. , BLAKE, Julian , MURPHY, Paul, J. , LIEBERT, Reuel, B.
发明人： ENGLAND, Jonathan, Gerald , WALTHER, Steven, R. , MUKA, Richard, S. , BLAKE, Julian , MURPHY, Paul, J. , LIEBERT, Reuel, B.
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该装置可以包括位于离子注入机内的端站附近的预冷站。该装置还可以包括在预冷站内的冷却机构。该装置还可以包括耦合到预冷站和终端站的加载组件。该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，冷却晶片进行离子注入工艺。

7. 发明申请

WO1997017716A1 AN ION IMPLANTER WITH POST MASS SELECTION DECELERATION 审中-公开
标题翻译：具有后质量选择减少的离子植绒
公开(公告)号：WO1997017716A1
公开(公告)日：1997-05-15
申请号：PCT/GB1996002740
申请日：1996-11-08
申请人： APPLIED MATERIALS, INC. , ENGLAND, Jonathan, Gerald , MOFFATT, Stephen , ARMOUR, David, George , FOAD, Majeed
发明人： APPLIED MATERIALS, INC.
IPC分类号： H01J37/30
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/04756
摘要： A post mass selection decel lens (9) is located between the exit aperture (55) of the mass selection chamber (47) and the entry (74) to the electron confinement tube (69) of the PFS. The lens comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential, and a field electrode (61) between them at a relatively high (negative) potential sufficient to provide focusing of the ion beam at the first electrode. The first electrode is larger than the beam to avoid deflecting ions at the periphery of the aperture out of the beam. The first electrode has an aperture which is smaller than that of the field electrode. The field electrode is at least -5kV relative to the flight tube, that is substantially more than required for electron suppression. Additional apertures are provided between the process chamber and the mass selection chamber to improve evacuation.
摘要翻译：后质量选择减速透镜（9）位于质量选择室（47）的出口孔（55）和PFS的电子限制管（69）的入口（74）之间。该透镜包括在基底电位处的第一电极（65），处于飞行管电位的第二电极（60）和位于它们之间的场电极（61），其处于相对高（负）电位，足以提供离子的聚焦光束在第一电极处。第一电极大于光束，以避免将光圈外围的离子偏离光束。第一电极具有小于场电极的孔径。场电极相对于飞行管至少为-5kV，这大大超过了电子抑制所需要的范围。在处理室和质量选择室之间提供额外的孔，以改善抽气。

8. 发明申请

WO2008020955A2 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008020955A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/016460
申请日：2007-07-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , AREVALO, Edwin, A. , FANG, Ziwei , SINGH, Vikram
发明人： ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , AREVALO, Edwin, A. , FANG, Ziwei , SINGH, Vikram
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and ' to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post- cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre -heated platen and to remove the wafer from the platen to the post -cooling station.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹紧机构，用于将晶片固定到压板上并且在晶片和压板之间提供预定的热接触以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。该设备还可以包括后冷却站，以在离子注入之后冷却晶片。该装置还可以包括晶片处理组件，以将晶片装载到预加热的压板上并将晶片从压板移除到后冷却站。

9. 发明申请

WO2009064872A3 PARTICLE BEAM ASSISTED MODIFCATION OF THIN FILM MATERIALS 审中-公开
公开(公告)号：WO2009064872A3
公开(公告)日：2009-05-22
申请号：PCT/US2008/083388
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , SINCLAIR, Frank , KOO, John (Bon Wong) , DORAI, Rajesh , GODET, Ludovic
发明人： ENGLAND, Jonathan, Gerald , SINCLAIR, Frank , KOO, John (Bon Wong) , DORAI, Rajesh , GODET, Ludovic
IPC分类号： H01L21/26 , H01L29/786 , H01L31/042
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

10. 发明申请

WO2009064867A3 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
公开(公告)号：WO2009064867A3
公开(公告)日：2009-05-22
申请号：PCT/US2008/083382
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , SINCLAIR, Frank , KOO, John (bon Woong) , DORAI, Rajesh , GODET, Ludovic
发明人： ENGLAND, Jonathan, Gerald , SINCLAIR, Frank , KOO, John (bon Woong) , DORAI, Rajesh , GODET, Ludovic
IPC分类号： H01L21/26 , H01L31/042 , H01L29/786
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include generating a continuous particle beam containing a plurality of particles; and introducing the continuous particle beam to a region of the substrate in an amorphous phase and transforming the region from the amorphous phase to a crystalline phase, wherein the continuous particle beam has a current density of 5 x 10 14 particles/cm 2 sec or greater.

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