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    • 10. 发明申请
    • Thin Film Field Effect Transistor with Dual Semiconductor Layers
    • 具有双半导体层的薄膜场效应晶体管
    • US20120007079A1
    • 2012-01-12
    • US13239078
    • 2011-09-21
    • Sanjiv SambandanAna Claudia AriasGregory Lewis Whiting
    • Sanjiv SambandanAna Claudia AriasGregory Lewis Whiting
    • H01L29/04H01L29/786
    • H01L29/78696H01L29/42384H01L29/78606H01L29/78645
    • A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.
    • 公开了薄膜场效应晶体管,其提供改进的基于时间的信道稳定性。 场效应晶体管包括由绝缘体隔开的第一和第二无序半导体层。 在一个实施例中,载流子注入端子设置在最靠近栅极端子的薄半导体层中。 在薄半导体层中形成电场。 在足够的场强下,电场延伸到与源极和漏极端子接触的第二半导体层。 在足够的场强下,在第二半导体层中建立通道,允许电流在源极和漏极端子之间流动。 在一定的栅极电压之上,在第一半导体层中感应出足够的自由电荷,使得场不延伸到第二半导体中,有效地关闭源极和漏极之间的电流。 可以获得单器件转换检测(以及其他应用)。